Native defects in ultra-high vacuum grown graphene islands on Cu(1 1 1).

We present a scanning tunneling microscopy (STM) study of native defects in graphene islands grown by ultra-high vacuum decomposition of ethylene on Cu(1 1 1). We characterize these defects through a survey of their apparent heights, atomic-resolution imaging, and detailed tunneling spectroscopy. Bright defects that occur only in graphene regions are identified as C site point defects in the graphene lattice and are most likely single C vacancies. Dark defect types are observed in both graphene and Cu regions, and are likely point defects in the Cu surface. We also present data showing the importance of bias and tip termination to the appearance of the defects in STM images and the ability to achieve atomic resolution. Finally, we present tunneling spectroscopy measurements probing the influence of point defects on the local electronic landscape of graphene islands.

Magnetism in single metalloorganic complexes formed by atom manipulation.

The magnetic properties of molecular structures can be tailored by chemical synthesis or bottom-up assembly at the atomic scale. We used scanning tunneling microscopy to study charge and spin transfer in individual complexes of transition metals with the charge acceptor, tetracyanoethylene (TCNE). The complexes were formed on a thin insulator, Cu2N on Cu(100), by manipulation of individual atoms and molecules. The Cu2N layer decouples the complexes from Cu electron density, enabling direct imaging of the TCNE molecular orbitals as well as spin-flip inelastic electron tunneling spectroscopy. Results were obtained at low temperature down to 1 K and in magnetic fields up to 7 T in order to resolve splitting of spin states in the complexes. We also performed spin-polarized density functional theory calculations to compare with the experimental data. Our results indicate that charge transfer to TCNE leads to a change in spin magnitude, Kondo resonance, and magnetic anisotropy for the metal atoms.

Two- and three-electron Pauli spin blockade in series-coupled triple quantum dots.

We investigate two- and three-electron spin blockade in three vertical quantum dots (QDs) coupled in series. Two-electron spin blockade is found in a region where sequential tunneling through all QDs is forbidden but tunneling involving virtual hopping through an empty QD is allowed. It is observed only for the hole cycle with a distinct bias threshold for access to the triplet state. Three-electron spin blockade involving the quadruplet state is observed for nonequibilium conditions where sequential tunneling is allowed and the triplet state is accessible. Our results shine light on the importance of the nonequibilium conditions to obtain sufficient population of triplet and quadruplet states necessary for spin blockade.

Carrier dynamics in type-II GaAsSb/GaAs quantum wells.

Time-resolved photoluminescence (PL) characteristics of type-II GaAsSb/GaAs quantum wells are presented. The PL kinetics are determined by the dynamic band bending effect and the distribution of localized centers below the quantum well band gap. The dynamic band bending results from the spatially separated electron and hole distribution functions evolving in time. It strongly depends on the optical pump power density and causes temporal renormalization of the quantum well ground-state energy occurring a few nanoseconds after the optical pulse excitation. Moreover, it alters the optical transition oscillator strength. The measured PL lifetime is 4.5 ns. We point out the critical role of the charge transfer processes between the quantum well and localized centers, which accelerate the quantum well photoluminescence decay at low temperature. However, at elevated temperatures the thermally activated back transfer process slows down the quantum well photoluminescence kinetics. A three-level rate equation model is proposed to explain these observations.

Broadly tunable femtosecond mode-locking in a Tm:KYW laser near 2 µm.

Efficient mode-locking in a Tm:KY(WO(4))(2) laser is demonstrated by using InGaAsSb quantum-well SESAMs. Self-starting ultrashort pulse generation was realized in the 1979-2074 nm spectral region. Maximum average output power up to 411 mW was produced around 1986 nm with the corresponding pulse duration and repetition rate of 549 fs and 105 MHz respectively. Optimised pulse durations of 386 fs were produced with an average power of 235 mW at 2029 nm.

Tunable field control over the binding energy of single dopants by a charged vacancy in GaAs.

Local manipulation of electric fields at the atomic scale may enable new methods for quantum transport and creates new opportunities for field control of ferromagnetism and spin-based quantum information processing in semiconductors. We used a scanning tunneling microscope to position charged arsenic (As) vacancies in the gallium arsenide 110 [GaAs(110)] surface with atomic precision, thereby tuning the local electrostatic field experienced by single manganese (Mn) acceptors. The effects of this field are quantified by measuring the shift of an acceptor state within the band gap of GaAs. Experiments with varying tip-induced band-bending conditions suggest a large binding energy for surface-layer Mn, which is reduced by direct Coulomb repulsion when the As vacancy is moved nearby.

Femtosecond mode-locked Tm(3+) and Tm(3+)-Ho(3+) doped 2 µm glass lasers.

We report on the spectroscopic characterization, continuous-wave and continuous wave mode-locked laser performance of bulk Tm(3+):GPNG fluorogermanate and Tm(3+)-Ho(3+):TZN tellurite glass lasers around 2 µm. A slope efficiency of up to 50% and 190 mW of output power were achieved from the Tm(3+):GPNG laser at 1944 nm during continuous wave operation. The Tm(3+)-Ho(3+):TZN laser produced a 26% slope efficiency with a maximum output power of 74 mW at 2012 nm. The Tm(3+):GPNG produced near-transform-limited pulses of 410 fs duration centered at 1997 nm with up to 84 mW of average output power and repetition frequency of 222 MHz when was passively modelocked using an ion-implanted InGaAsSb-based quantum well SESAM. Using the same SESAM, the Tm(3+)-Ho(3+):TZN laser generated 630-fs pulses with 38 mW of average output power at 2012 nm. Data analysis of pulses at different intracavity pulse energies provided an estimation of n(2) at 2012 nm of 2.9 × 10(-15) cm(2)/W for the Tm(3+)-Ho(3+):TZN.

Femtosecond (191 fs) NaY(WO4)2 Tm,Ho-codoped laser at 2060 nm.

We report, for the first time to our knowledge, femtosecond-pulse operation of a Tm,Ho:NaY(WO(4))(2) laser at around 2060 nm. Transform-limited 191 fs pulses are produced with an average output power of 82 mW at a 144 MHz pulse repetition frequency. Maximum output power of up to 155 mW is generated with a corresponding pulse duration of 258 fs. An ion-implanted InGaAsSb quantum-well-based semiconductor saturable absorber mirror is used for passive mode-locking maintenance.

Passive mode locking of a Tm,Ho:KY(WO4)2 laser around 2 microm.

We report the first demonstration, to our knowledge, of passive mode locking in a Tm(3+), Ho(3+)-codoped KY(WO(4))(2) laser operating in the 2000-2060 nm spectral region. An InGaAsSb-based quantum well semiconductor saturable absorber mirror is used for the initiation and stabilization of the ultrashort pulse generation. Pulses as short as 3.3 ps were generated at 2057 nm with average output powers up to 315 mW at a pulse repetition frequency of 132 MHz for 1.15 W of absorbed pump power at 802 nm from a Ti:sapphire laser.

Coherent three-level mixing in an electronic quantum dot.

We observe magnetic-field-induced level mixing and quantum superposition phenomena between three approaching single-particle states in a quantum dot probed via the ground state of an adjacent quantum dot by single-electron resonant tunneling. The mixing is attributed to anisotropy and anharmonicity in realistic dot confining potentials. The pronounced anticrossing and transfer of strengths (both enhancement and suppression) between resonances can be understood with a simple coherent level mixing model. Superposition can lead to the formation of a dark state by complete cancellation of an otherwise strong resonance, an effect resembling coherent population trapping in a three-level-system of quantum and atom optics.

Quantum dots for terahertz generation.

Nanostructures made of semiconductors, such as quantum wells and quantum dots (QD), are well known, and some have been incorporated in practical devices. Here we focus on novel structures made of QDs and related devices for terahertz (THz) generation. Their potential advantages, such as low threshold current density, high characteristic temperature, increased differential gain, etc, make QDs promising candidates for light emitting applications in the THz region. Our idea of using resonant tunneling through QDs is presented, and initial results on devices consisting of self-assembled InAs QDs in an undoped GaAs matrix, with a design incorporating a GaInNAs/GaAs short period superlattice, are discussed. Moreover, shallow impurities are also being explored for possible THz emission: the idea is based on the tunneling through bound states of individual donor or acceptor impurities in the quantum well. Initial results on devices having an AlGaAs/GaAs double-barrier resonant tunneling structure are discussed.

Single-atom spin-flip spectroscopy.

We demonstrate the ability to measure the energy required to flip the spin of single adsorbed atoms. A low-temperature, high-magnetic field scanning tunneling microscope was used to measure the spin excitation spectra of individual manganese atoms adsorbed on Al2O3 islands on a NiAl surface. We find pronounced variations of the spin-flip spectra for manganese atoms in different local environments.

Information transport and computation in nanometre-scale structures.

We discuss two examples of novel information-transport and processing mechanisms in nanometre-scale structures. The local modulation and detection of a quantum state can be used for information transport at the nanometre length-scale, an effect we call a 'quantum mirage'. We demonstrate that, unlike conventional electronic information transport using wires, the quantum mirage can be used to pass multiple channels of information through the same volume of a solid. We discuss a new class of nanometre-scale structures called 'molecule cascades', and show how they may be used to implement a general-purpose binary-logic computer in which all of the circuitry is at the nanometre length-scale.

Coupled electron-phonon modes in optically pumped resonant intersubband lasers.

Intersubband lasing at 12-16 microm based on a CO2 laser pumped stimulated resonant Raman process in GaAs/AlGaAs three-level double-quantum-well structures is reported. The presence, or lack of, lasing action provides evidence for resonantly coupled modes of collective electronic intersubband transitions and longitudinal optical phonons. An anticrossing behavior of these modes is clearly seen when the difference between the pump and lasing energies (i.e., Stokes Raman shift) is compared with the subband separation. This work reveals the significance of the strong coupling between intersubband transitions and phonons and raises a new possibility of realizing a phonon "laser."

Molecule cascades.

Carbon monoxide molecules were arranged in atomically precise configurations, which we call "molecule cascades," where the motion of one molecule causes the subsequent motion of another, and so on in a cascade of motion similar to a row of toppling dominoes. Isotopically pure cascades were assembled on a copper (111) surface with a low-temperature scanning tunneling microscope. The hopping rate of carbon monoxide molecules in cascades was found to be independent of temperature below 6 kelvin and to exhibit a pronounced isotope effect, hallmarks of a quantum tunneling process. At higher temperatures, we observed a thermally activated hopping rate with an anomalously low Arrhenius prefactor that we interpret as tunneling from excited vibrational states. We present a cascade-based computation scheme that has all of the devices and interconnects required for the one-time computation of an arbitrary logic function. Logic gates and other devices were implemented by engineered arrangements of molecules at the intersections of cascades. We demonstrate a three-input sorter that uses several AND gates and OR gates, as well as the crossover and fan-out units needed to connect them.

Ultrafast manipulation of electron spin coherence.

A technique is developed with the potential for coherent all-optical control over electron spins in semiconductors on femtosecond time scales. The experiments show that optical "tipping" pulses can enact substantial rotations of electron spins through a mechanism dependent on the optical Stark effect. These rotations were measured as changes in the amplitude of spin precession after optical excitation in a transverse magnetic field and approach pi/2 radians. A prototype sequence of two tipping pulses indicates that the rotation is reversible, a result that establishes the coherent nature of the tipping process.