ABSTRACT
Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) images of graphene reveal either a triangular or honeycomb pattern at the atomic scale depending on the imaging parameters. The triangular patterns at the atomic scale are particularly difficult to interpret, as the maxima in the images could be every other carbon atom in the six-fold hexagonal array or even a hollow site. Carbon sites exhibit an inequivalent electronic structure in HOPG or multilayer graphene due to the presence of a carbon atom or a hollow site underneath. In this work, we report small-amplitude, simultaneous STM/AFM imaging using a metallic (tungsten) tip, of the graphene surface as-grown by chemical vapor deposition (CVD) on Cu foils. Truly simultaneous operation is possible only with the use of small oscillation amplitudes. Under a typical STM imaging regime the force interaction is found to be repulsive. Force-distance spectroscopy revealed a maximum attractive force of about 7 nN between the tip and carbon/hollow sites. We obtained different contrast between force and STM topography images for atomic features. A honeycomb pattern showing all six carbon atoms is revealed in AFM images. In one contrast type, simultaneously acquired STM topography revealed hollow sites to be brighter. In another, a triangular array with maxima located in between the two carbon atoms was acquired in STM topography.
ABSTRACT
In this work, electrical square pulses at various duty cycles are applied to a silicon microsphere resonator in order to continuously tune the refractive index of a silicon microsphere and to map the optical resonance in the time domain. A continuous-wave semiconductor diode laser operating in the L-band is used for the excitation of the silicon microsphere optical resonances. The 90° transverse magnetically polarized elastic scattering signal is used to monitor the silicon microsphere resonances. We show that at a constant input laser wavelength, up to five high-quality-factor optical resonances can be scanned by dynamical electrical tuning of the silicon microsphere cavity.
ABSTRACT
The existence of one-dimensional (1D) electronic states between self-organized Pt nanowires spaced 1.6 or 2.4 nm apart on a Ge(001) surface is revealed by low-temperature scanning tunneling microscopy. These perfectly straight Pt nanowires act as barriers for a surface state (located just below the Fermi level) of the underlying terrace. The energy positions of the 1D electronic states are in good agreement with the energy levels of a quantum particle in a well. Spatial maps of the differential conductivity of the 1D electronic states conclusively reveal that these states are exclusively present in the troughs between the Pt nanowires.
ABSTRACT
The surface electronic structure of Ge(001) was studied by scanning tunneling spectroscopy. The measured surface densities of states unequivocally reveal the presence of a metallic state on the (2 x 1) domains, which is absent on the c(4 x 2) domains. This metallic state, so far observed only in integral measurements, is attributed to the flip-flopping dimers that constitute the (2 x 1) domains. Our data also reveal a set of previously unresolved surface states, in perfect agreement with published theoretical predictions.