Ion beam composition in ion source based on magnetron sputtering discharge at extremely low working pressure.

In an ion source based on a pulsed planar magnetron sputtering discharge with gas (argon) feed, the fraction of metal ions in the ion beam decreases with decreasing gas pressure, down to the minimum possible working pressure of the magnetron sputtering discharge. The use of a supplementary vacuum arc plasma injector provides stable operation of the pulsed magnetron sputtering discharge at extremely low pressure and without gas feed. Under these conditions, the pressure dependence of the gaseous ion fraction displays a maximum (is nonmonotonic).

Molecular ion sources for low energy semiconductor ion implantation (invited).

Smaller semiconductors require shallow, low energy ion implantation, resulting space charge effects, which reduced beam currents and production rates. To increase production rates, molecular ions are used. Boron and phosphorous (or arsenic) implantation is needed for P-type and N-type semiconductors, respectively. Carborane, which is the most stable molecular boron ion leaves unacceptable carbon residue on extraction grids. A self-cleaning carborane acid compound (C4H12B10O4) was synthesized and utilized in the ITEP Bernas ion source resulting in large carborane ion output, without carbon residue. Pure gaseous processes are desired to enable rapid switch among ion species. Molecular phosphorous was generated by introducing phosphine in dissociators via 4PH3 = P4 + 6H2; generated molecular phosphorous in a pure gaseous process was then injected into the HCEI Calutron-Bernas ion source, from which P4(+) ion beams were extracted. Results from devices and some additional concepts are described.

Development of the ion source for cluster implantation.

Bernas ion source development to meet needs of 100s of electron-volt ion implanters for shallow junction production is in progress in Institute for Theoretical and Experimental Physics. The ion sources provides high intensity ion beam of boron clusters under self-cleaning operation mode. The last progress with ion source operation is presented. The mechanism of self-cleaning procedure is described.

Inverted time-of-flight spectrometer for mass-to-charge analysis of plasma.

The paper describes the principle of operation, design special features, and parameters of an inverted time-of-flight spectrometer. The spectrometer is designed in such way that its deflecting plates, drift tube, and primary measuring system are at high potential with respect to the ground potential, whereas plasma is formed near grounded electrodes. This type of configuration greatly extends the application range of the device, making it possible to measure the mass-to-charge composition of plasma with wide range of parameters.

Gas feeding molecular phosphorous ion source for semiconductor implanters.

Phosphorus is a much used dopant in semiconductor technology. Its vapors represent a rather stable tetratomic molecular compound and are produced from one of the most thermodynamically stable allotropic forms of phosphorus-red phosphorus. At vacuum heating temperatures ranging from 325 °C, red phosphorus evaporates solely as P4 molecules (P4/P2 ∼ 2 × 10(5), P4/P ∼ 10(21)). It is for this reason that red phosphorus is best suited as a source of polyatomic molecular ion beams. The paper reports on experimental research in the generation of polyatomic phosphorus ion beams with an alternative P vapor source for which a gaseous compound of phosphorus with hydrogen - phosphine - is used. The ion source is equipped with a specially designed dissociator in which phosphine heated to temperatures close to 700 °C decomposes into molecular hydrogen and phosphorus (P4) and then the reaction products are delivered through a vapor line to the discharge chamber. Experimental data are presented reflecting the influence of the discharge parameters and temperature of the dissociator heater on the mass-charge state of the ion beam.

Molecular phosphorus ion source for semiconductor technology.

This paper presents results on the generation of molecular phosphorus ion beams in a hot filament ion source. Solid red phosphorous is evaporated mainly as tetra-atomic molecules up to a temperature of 800°C. Thus, one of the main conditions for producing maximum P(4)(+) fraction in the beam is to keep the temperature of the phosphorous oven, the steam line and the discharge chamber walls no greater than 800°C. The prior version of our ion source was equipped with a discharge chamber cooling system. The modified source ensured a P(4)(+) ion beam current greater than 30% of the total beam current.

Electrostatic plasma lens for focusing negatively charged particle beams.

We describe the current status of ongoing research and development of the electrostatic plasma lens for focusing and manipulating intense negatively charged particle beams, electrons, and negative ions. The physical principle of this kind of plasma lens is based on magnetic isolation electrons providing creation of a dynamical positive space charge cloud in shortly restricted volume propagating beam. Here, the new results of experimental investigations and computer simulations of wide-aperture, intense electron beam focusing by plasma lens with positive space charge cloud produced due to the cylindrical anode layer accelerator creating a positive ion stream towards an axis system is presented.

High-energy metal ion implantation for reduction of surface resistivity of alumina ceramic.

In this work, the possibility to increase the surface conductivity of ceramic insulators through their treatment with accelerated metal ion beams produced by a MevvaV.Ru vacuum arc source is demonstrated. The increase in surface conductivity is made possible due to experimental conditions in which an insulated collector is charged by beam ions to a potential many times lower than the accelerating voltage, and hence, than the average beam ion energy. The observed effect of charge neutralization of the accelerated ion beam is presumably associated with electrons knocked out of the electrodes of the accelerating system of the source and of the walls of the vacuum chamber by the accelerated ions.

Boron ion source based on planar magnetron discharge in self-sputtering mode.

An ion source based on a planar magnetron sputtering device with thermally isolated target has been designed and demonstrated. For a boron sputtering target, high target temperature is required because boron has low electrical conductivity at room temperature, increasing with temperature. The target is well-insulated thermally and can be heated by an initial low-current, high-voltage discharge mode. A discharge power of 16 W was adequate to attain the required surface temperature (400 degrees C), followed by transition of the discharge to a high-current, low-voltage mode for which the magnetron enters a self-sputtering operational mode. Beam analysis was performed with a time-of-flight system; the maximum boron ion fraction in the beam is greater than 99%, and the mean boron ion fraction, time-integrated over the whole pulse length, is about 95%. We have plans to make the ion source steady state and test with a bending magnet. This kind of boron ion source could be competitive to conventional boron ion sources that utilize compounds such as BF(3), and could be useful for semiconductor industry application.

Self-heated hollow cathode discharge system for charged particle sources and plasma generators.

This paper presents the results of experimental studies of a new design of discharge system using a self-heated hollow cathode. The discharge system offers certain advantages that are attractive for use in high-dose ion implantation, plasma generators, and plasma electron sources.

Recent advances in plasma devices based on plasma lens configuration for manipulating high-current heavy ion beams.

We describe new results of development of novel generation cylindrical plasma devices based on the electrostatic plasma lens configuration and concept of electrons magnetic insulation. The crossed electric and magnetic fields plasma lens configuration provides us with the attractive and suitable method for establishing a stable plasma discharge at low pressure. Using plasma lens configuration in this way some cost-effective plasma devices were developed for ion treatment and deposition of exotic coatings and the effective lens was first proposed for manipulating high-current beams of negatively charged particles. Here we describe operation and features of these plasma devices, and results of theoretical consideration of mechanisms determining their optimal operation conditions.

Carborane beam from ITEP Bernas ion source for semiconductor implanters.

A joint research and development of steady state intense boron ion sources for hundreds of electron-volt ion implanters has been in progress for the past 5 years. The difficulties of extraction and transportation of low energy boron beams can be solved by implanting clusters of boron atoms. In Institute for Theoretical and Experimental Physics (ITEP) the Bernas ion source successfully generated the beam of decaborane ions. The carborane (C(2)B(10)H(12)) ion beam is more attractive material due to its better thermal stability. The results of carborane ion beam generation are presented. The result of the beam implantation into the silicon wafer is presented as well.

Side extraction duoPIGatron-type ion source.

We have designed and constructed a compact duoPIGatron-type ion source, for possible use in ion implanters, in which ions are extracted from a side aperture in contrast to conventional duoPIGatron sources with axial ion extraction. The size of the side extraction aperture is 1 x 40 mm(2). The ion source was developed to study physical and technological aspects relevant to an industrial ion source. The side extraction duoPIGatron has a stable arc, uniformly bright illumination, and dense plasma. The present work describes some operating parameters of the ion source using argon and BF(3). Total unanalyzed beam currents were 40 mA with Ar at an arc current of 7 A and 13 mA with BF(3) gas at an arc current of 9 A.

Bernas ion source discharge simulation.

As the technology and applications continue to grow up, the development of plasma and ion sources with clearly specified characteristic is required. Therefore comprehensive numerical studies at the project stage are the key point for ion implantation source manufacturing (especially for low energy implantation). Recently the most commonly encountered numerical approach is the Monte Carlo particle-in-cell (MCPIC) method also known as particle-in-cell method with Monte Carlo collisions. In ITEP the 2D3V numerical code PICSIS-2D realizing MCPIC method was developed in the framework of the joint research program. We present first results of the simulation for several materials interested in semiconductors. These results are compared with experimental data obtained at the ITEP ion source test bench.

Experimental comparison of time-of-flight mass analysis with magnetic mass analysis.

A series of experiments was carried out in which both a magnetic analyzer (mass separator) and a time-of-flight (TOF) spectrometer were used for ion charge/mass spectral analysis of the ion beam formed by a dc Bernas ion source made for semiconductor implantation. The TOF analyzer was a detachable device that provides rapid analysis of charge-to-mass composition of moderate energy ion beams. The magnetic analyzer was a massive device using a 90 degrees -sector bending magnet with radius of the central orbit of 35 cm. Comparison of these two methods for measuring ion beam composition shows good agreement.

Status of ITEP decaborane ion source program.

The joint research and development program is continued to develop steady-state ion source of decaborane beam for ion implantation industry. Both Freeman and Bernas ion sources for decaborane ion beam generation were investigated. Decaborane negative ion beam as well as positive ion beam were generated and delivered to the output of mass separator. Experimental results obtained in ITEP are presented.

Ion sources for energy extremes of ion implantation.

For the past four years a joint research and development effort designed to develop steady state, intense ion sources has been in progress with the ultimate goal to develop ion sources and techniques that meet the two energy extreme range needs of meV and hundreads of eV ion implanters. This endeavor has already resulted in record steady state output currents of high charge state of antimony and phosphorus ions: P(2+) [8.6 pmA (particle milliampere)], P(3+) (1.9 pmA), and P(4+) (0.12 pmA) and 16.2, 7.6, 3.3, and 2.2 pmA of Sb(3+)Sb(4+), Sb(5+), and Sb(6+) respectively. For low energy ion implantation, our efforts involve molecular ions and a novel plasmaless/gasless deceleration method. To date, 1 emA (electrical milliampere) of positive decaborane ions was extracted at 10 keV and smaller currents of negative decaborane ions were also extracted. Additionally, boron current fraction of over 70% was extracted from a Bernas-Calutron ion source, which represents a factor of 3.5 improvement over currently employed ion sources.