Chemoselective Adsorption of Allyl Ethers on Si(001): How the Interaction between Two Functional Groups Controls the Reactivity and Final Products of a Surface Reaction.

Selective adsorption of multifunctional molecules is rarely observed when the different functional groups react via nonactivated reaction channels. Although the latter is also the case for ether cleavage and the adsorption of C=C double bonds on the highly reactive Si(001) surface, we find that allyl ethers, which combine both functional groups, react on Si(001) selectively via the cleavage of the molecules' ether group. In addition, our XPS measurements at 90, 150, and 300 K indicate an increased reactivity of the ether group when compared to monofunctional ethers. STM investigations furthermore reveal different final adsorption configurations after ether cleavage of allyl methyl ether when compared to diethyl ether as the monofunctional reference molecule. The interaction of the two functional groups in one molecule thus leads to new reaction channels with higher reactivity for ether cleavage on Si(001). As a further consequence, the reactivity of the C=C double bond is suppressed up to room temperature, leading to the observed selective adsorption.

[Rapid growth and malignant transformation of a mucinous cystic neoplasm during pregnancy - a case report]. / Massive Größenprogredienz und maligne Transformation einer muzinös-zystischen Neoplasie des Pankreas in der Schwangerschaft ­ ein Fallbericht.

BACKGROUND: Mucinous-cystic neoplasms (MCN) account for 10% of all pancreatic cystic lesions. They are found almost exclusively in females. MCN have an ovarian-like stroma and often estrogen and progesterone receptors. During pregnancy, they can massively increase in size and transform into malignancy. CASE REPORT: We report on a 29-year-old woman in whom a 35mm cyst in the pancreatic tail had been diagnosed several years ago. After workup the lesions had been classified as a pseudocyst. During pregnancy, the cyst massively increased in size and finally was resected. Histology showed a mucinous-cystic neoplasia with focal malignant transformation. CONCLUSION: Cystic neoplasms of the pancreas require a differentiated management. While overtreatment should be avoided, malignant transformation always merits consideration - in particular if the cystic lesion is located in the pancreatic tail. Women with suspected MCN or cystic pancreatic lesions of uncertain etiology should be informed about the (rare) risk of a malignant transformation of an MCN and should be closely monitored during pregnancy.

Terahertz radiation from propagating acoustic phonons based on deformation potential coupling.

We report on new THz electromagnetic emission mechanism from deformational coupling of acoustic (AC) phonons with electrons in the propagation medium of non-polar Si. The epicenters of the AC phonon pulses are the surface and interface of a GaP transducer layer whose thickness (d) is varied in nanoscale from 16 to 45 nm. The propagating AC pulses locally modulate the bandgap, which in turn generates a train of electric field pulses, inducing an abrupt drift motion at the depletion edge of Si. The fairly time-delayed THz bursts, centered at different times (t1T H z, t2T H z, and t3T H z), are concurrently emitted only when a series of AC pulses reach the point of the depletion edge of Si, even without any piezoelectricity. The analysis on the observed peak emission amplitudes is consistent with calculations based on the combined effects of mobile charge carrier density and AC-phonon-induced local deformation, which recapitulates the role of deformational potential coupling in THz wave emission in a formulatively distinct manner from piezoelectric counterpart.

Ultrafast Charge-Transfer Dynamics in Twisted MoS2/WSe2 Heterostructures.

Two-dimensional transition metal dichalcogenides offer a fascinating platform for creating van der Waals heterojunctions with exciting physical properties. Because of their typical type-II band alignment, photoexcited electrons and holes can separate via interfacial charge transfer. Furthermore, the relative crystallographic alignment of the individual layers in these heterostructures represents an important degree of freedom. Based on both effects, various fascinating ideas for applications in optoelectronics and valleytronics have been suggested. Despite its utmost importance for the design and efficiency of potential devices, the nature and the dynamics of ultrafast charge transfer are not yet well understood. This is mainly because the charge transfer can be surprisingly fast, usually faster than the temporal resolution of previous experimental approaches. Here, we apply time- and polarization-resolved second-harmonic imaging microscopy to investigate the charge-transfer dynamics for three MoS2/WSe2 heterostructures with different stacking angles at a previously unattainable time resolution of ≈10 fs. For 1.70 eV excitation energy, electron transfer from WSe2 to MoS2 is found to depend considerably on the stacking angle with the fastest transfer time observed to be as short as 12 fs. At 1.85 eV excitation energy, ultrafast hole transfer from MoS2 to hybridized states at the Γ-point and to the K-points of WSe2 has to be considered. Surprisingly, the corresponding decay dynamics show only a minor stacking-angle dependence indicating that radiative recombination of momentum-space indirect Γ-K excitons becomes the dominant decay route for all samples.

Momentum-Resolved Observation of Exciton Formation Dynamics in Monolayer WS2.

The dynamics of momentum-dark exciton formation in transition metal dichalcogenides is difficult to measure experimentally, as many momentum-indirect exciton states are not accessible to optical interband spectroscopy. Here, we combine a tunable pump, high-harmonic probe laser source with a 3D momentum imaging technique to map photoemitted electrons from monolayer WS2. This provides momentum-, energy- and time-resolved access to excited states on an ultrafast time scale. The high temporal resolution of the setup allows us to trace the early-stage exciton dynamics on its intrinsic time scale and observe the formation of a momentum-forbidden dark KΣ exciton a few tens of femtoseconds after optical excitation. By tuning the excitation energy, we manipulate the temporal evolution of the coherent excitonic polarization and observe its influence on the dark exciton formation. The experimental results are in excellent agreement with a fully microscopic theory, resolving the temporal and spectral dynamics of bright and dark excitons in WS2.

Adsorption dynamics of bifunctional molecules: Allyl methyl ether on Si(001).

The reaction dynamics of allyl methyl ether (AME) on Si(001) was studied by means of molecular beam techniques. The reaction of this bifunctional molecule comprising an ether and an alkene group was found to proceed via an intermediate state as deduced from the temperature dependence of the initial sticking probability s0. At constant surface temperature Ts, s0 decreases continuously with increasing kinetic energy Ekin, indicating a non-activated adsorption channel. Qualitatively and quantitatively, the energy dependence is almost identical to the adsorption dynamics of diethyl ether on Si(001). We attribute this to a similar nature of the intermediate state, which largely determines the adsorption dynamics. In consequence, this indicates a predominant role of the ether group and a minor influence of the C=C double bond on the adsorption dynamics of AME on Si(001).

Directional ultrafast charge transfer in a WSe2/MoSe2 heterostructure selectively probed by time-resolved SHG imaging microscopy.

Heterostructures of two-dimensional transition metal dichalcogenides (TMD) have shown promise for various optoelectronic and novel valleytronic applications. Due to their type-II band alignment, photoexcited electrons and holes can separate into different layers through ultrafast charge transfer. While this charge-transfer process is critical for potential applications, the underlying mechanisms still remain elusive. Here, we demonstrate for a rotationally mismatched WSe2/MoSe2 heterostructure that directional ultrafast charge transfer between the layers becomes accessible by time-resolved optical second-harmonic generation. By tuning the photon energy of the pump pulse, one of the two materials is resonantly excited, whereas the polarization of the probe pulse can be optimized to selectively detect the charge transfer into the other material. This allows us to explore the interlayer hole transfer from the WSe2 into the MoSe2 layer and vice versa, which appears within a few hundred femtoseconds via hybridized intermediate states at the Γ-point. Our approach enables systematic investigations of the charge transfer in dependence of the rotational layer mismatch in TMD heterostructures.

Second-harmonic imaging microscopy for time-resolved investigations of transition metal dichalcogenides.

Two-dimensional transition metal dichalcogenides (TMDC) have shown promise for various applications in optoelectronics and so-called valleytronics. Their operation and performance strongly depend on the stacking of individual layers. Here, optical second-harmonic generation (SHG) in imaging mode is shown to be a versatile tool for systematic time-resolved investigations of TMDC monolayers and heterostructures in consideration of the material's structure. Large sample areas can be probed without the need of any mapping or scanning. By means of polarization dependent measurements, the crystalline orientation of monolayers or the stacking angles of heterostructures can be evaluated for the whole field of view. Pump-probe experiments then allow to correlate observed transient changes of the second-harmonic response with the underlying structure. The corresponding time-resolution is virtually limited by the pulse duration of the used laser. As an example, polarization dependent and time-resolved measurements on mono- and multilayer MoS2flakes grown on a SiO2/Si(001) substrate are presented.

Controlling an SN 2 Reaction by Electronic and Vibrational Excitation: Tip-Induced Ether Cleavage on Si(001).

Controlling chemical reactions beyond thermally activated reaction schemes can open alternative reaction channels, and thus lead to new final products. Herein, we show for tetrahydrofuran (THF) cleavage on Si(001), the surface analogue of an SN 2 reaction, that excitation by electrons from the tip of a scanning tunneling microscope (STM) not only opens new reaction channels, but that different final products can be selectively addressed by the type of excitation: Above a threshold voltage of 2.5 V, direct excitation by electron transfer into the antibonding C-O orbital of the THF molecules induces ether cleavage of the datively bonded intermediate of THF on Si(001). Below the threshold, ether cleavage is induced by multiple excitation of vibrational modes. In both modes of excitation, additional final configurations were observed when compared to the thermally activated reaction. The branching ratios of the final configurations are different for the two different excitation mechanisms, which in turn can be controlled by the applied sample bias.

Coherent optical and acoustic phonons generated at lattice-matched GaP/Si(0 0 1) heterointerfaces.

Thin GaP films can be grown on an exact Si(0 0 1) substrate with nearly perfect lattice match. We perform all-optical pump-probe measurements to investigate the ultrafast electron-phonon coupling at the buried interface of GaP/Si. Above-bandgap excitation with a femtosecond laser pulse can induce coherent longitudinal optical (LO) phonons both in the GaP overlayer and in the Si substrate. The coupling of the GaP LO phonons with photoexcited plasma is reduced significantly with decreasing GaP layer thickness from 56 to 16 nm due to the quasi-two-dimensional confinement of the plasma. The same laser pulse can also generate coherent longitudinal acoustic phonons in the form of a strain pulse. The strain pulse induces not only a periodic modulation in the optical reflectivity as it propagates in the semiconductor, but also a sharp spike when it arrives at the GaP layer boundary. The acoustic pulse induced at the GaP/Si interface is remarkably stronger than that at the Si surface, suggesting a possible application of the GaP/Si heterostructure as an opto-acoustic transducer. The amplitude and the phase of the reflectivity modulation varies with the GaP layer thickness, which can be understood in terms of the interference caused by the multiple acoustic pulses generated at the top surface and at the buried interface.

Model potential for the description of metal/organic interface states.

We present an analytical one-dimensional model potential for the description of electronic interface states that form at the interface between a metal surface and flat-lying adlayers of π-conjugated organic molecules. The model utilizes graphene as a universal representation of these organic adlayers. It predicts the energy position of the interface state as well as the overlap of its wave function with the bulk metal without free fitting parameters. We show that the energy of the interface state depends systematically on the bond distance between the carbon backbone of the adayers and the metal. The general applicability and robustness of the model is demonstrated by a comparison of the calculated energies with numerous experimental results for a number of flat-lying organic molecules on different closed-packed metal surfaces that cover a large range of bond distances.

Surface Chemistry of tert-Butylphosphine (TBP) on Si(001) in the Nucleation Phase of Thin-Film Growth.

We combine density functional theory calculations and scanning tunneling microscopy investigations to identify the relevant chemical species and reactions in the nucleation phase of chemical vapor deposition. tert-Butylphosphine (TBP) was deposited on a silicon substrate under conditions typical for surface functionalization and growth of semiconductor materials. On the activated hydrogen-covered surface H/Si(001) it forms a strong covalent P-Si bond without loss of the tert-butyl group. Calculations show that site preference for multiple adsorption of TBP is influenced by steric repulsion of the adsorbate's bulky substituent. STM imaging furthermore revealed an anisotropic distribution of TBP with a preference for adsorption perpendicular to the surface dimer rows. The adsorption patterns found can be understood by a mechanism invoking stabilization of surface hydrogen vacancies through electron donation by an adsorbate. The now improved understanding of nucleation in thin-film growth may help to optimize molecular precursors and experimental conditions and will ultimately lead to higher quality materials.

Binding Energy and Dissociation Barrier: Experimental Determination of the Key Parameters of the Potential Energy Curve of Diethyl Ether on Si(001).

The key parameters of the potential energy curve of organic molecules on semiconductor surfaces, binding energy of the intermediate state and dissociation barrier, were experimentally investigated for the model system of diethyl ether (Et2O) on Si(001). Et2O adsorbs via a datively bonded intermediate from which it converts via ether cleavage into a covalently attached final state. This thermally activated conversion into the final state was followed in real-time by means of optical second-harmonic generation (SHG) at different temperatures and the associated energy barrier ϵa = 0.38 ± 0.05 eV and pre-exponential factor νa = 10(4±1) s(-1) were determined. From molecular beam experiments on the initial sticking probability, the difference between the desorption energy ϵd and ϵa was extracted and thus the binding energy of the intermediate state was determined (0.62 ± 0.08 eV). The results are discussed in terms of general chemical trends as well as with respect to a wider applicability on adsorbate reactions on semiconductor surfaces.

Complex surface chemistry of an otherwise inert solvent molecule: tetrahydrofuran on Si(001).

The reaction of tetrahydrofuran (THF), an otherwise inert solvent molecule, on Si(001) was experimentally studied in ultra-high vacuum. Using scanning tunneling microscopy (STM) and photoelectron spectroscopy at variable temperature, we could both isolate a datively bound intermediate state of THF on Si(001), as well as the final configuration that bridges two dimer rows of the Si(001) surface after ether cleavage. The latter configuration implies splitting of the OC bond, which is typically kinetically suppressed. THF thus exhibits a hitherto unknown reactivity on Si(001).

Formation of an Organic/Metal Interface State from a Shockley Resonance.

The emergence of an organic/metal interface state is studied for the interface between 3,4,9,10-perylene-tetracarboxylic acid dianhydride (PTCDA) and Ag(100) by means of time- and angle-resolved two-photon photoemission and density functional theory. The interface state is located in the projected band gap of Ag(100), 2.3 eV above the Fermi level, and has an electron lifetime in the 10 fs range. The interface state has no direct counterpart on the clean Ag(100) surface, which only exhibits a broad resonance at ≈1 eV lower energy. Our results thus show that organic overlayers are able to shift such a resonance substantially and even qualitatively change its character to a distinct electronic state at the interface.

Structural evolution of perfluoro-pentacene films on Ag(111): transition from 2D to 3D growth.

The structural evolution and thermal stability of perfluoro-pentacene (PF-PEN) thin films on Ag(111) have been studied by means of low-temperature scanning tunnelling microscopy (STM), low-energy electron diffraction (LEED), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and thermal desorption spectroscopy (TDS). Well-defined monolayer films can be prepared by utilizing the different adsorption energy of mono- and multilayer films and selectively desorbing multilayers upon careful heating at 380 K, whereas at temperatures above 400 K, a dissociation occurs. In the first monolayer, the molecules adopt a planar adsorption geometry and form a well-ordered commensurate (6 × 3) superstructure where molecules are uniformly oriented with their long axis along the <110> azimuth. This molecular orientation is also maintained in the second layer, where molecules exhibit a staggered packing motif, whereas further deposition leads to the formation of isolated, tall islands. Moreover, on smooth silver surfaces with extended terraces, growth of PF-PEN onto beforehand prepared long-range ordered monolayer films at elevated temperature leads to needle-like islands that are uniformly aligned at substrate steps along <110> azimuth directions.

Electronic structure at the perylene-tetracarboxylic acid dianhydride/Ag(111) interface studied with two-photon photoelectron spectroscopy.

The electronic structure of the prototype metal/organic contact 3,4,9,10-perylene-tetracarboxylic acid dianhydride (PTCDA) on a Ag(111)-surface has been investigated using time- and angle-resolved two-photon photoelectron spectroscopy (2PPE). Our analysis addresses particularly the nature of the interface state (IS) emerging at the interface due to the substrate-adsorbate interaction [C. H. Schwalb, S. Sachs, M. Marks et al., Phys. Rev. Lett. 101, 146801 (2008)]. Its free-electron-like dispersion and a possible backfolding at the surface Brillouin zone boundaries are discussed. Time-resolved pump-probe experiments reveal the inelastic electron lifetime along the dispersion parabola and show its decrease for increasing parallel momentum. The temperature dependence of the peak linewidth indicates a coupling of the IS to molecular vibrations. Moreover, additional aspects are addressed, such as the determination of the electron attenuation length of photoelectrons for low kinetic energy originating from the IS and the work function change of the sample upon PTCDA adsorption with very high energy resolution.

Coronary MR angiography at 3.0 T versus that at 1.5 T: initial results in patients suspected of having coronary artery disease.

PURPOSE: To prospectively evaluate the feasibility, image quality, and accuracy of coronary magnetic resonance (MR) angiography at 3.0 T in patients suspected of having coronary artery disease and to prospectively compare these results with those of coronary MR angiography performed at 1.5 T. MATERIALS AND METHODS: The study was approved by the institutional review board, and informed consent was obtained from all patients. Eighteen patients (11 men, seven women; mean age, 63 years; age range, 45-76 years) suspected of having coronary artery disease who were scheduled to undergo elective conventional coronary angiography (reference standard) were included. For coronary MR angiography at 3.0 and 1.5 T, a vector electrocardiographically gated three-dimensional segmented k-space gradient-echo imaging sequence was combined with real-time respiratory navigator gating and tracking. Signal-to-noise ratios (SNRs), contrast-to-noise ratios (CNRs), scores of image quality and sensitivity and specificity for the detection of coronary artery stenosis on a segment-by-segment basis were assessed at 3.0 and 1.5 T. Data were analyzed for statistical differences by using the Wilcoxon matched-pairs test and the McNemar test. RESULTS: The average increase in SNR at 3.0 T with respect to that at 1.5 T was 29.5% for the left coronary artery (LCA) and 31.2% for the right coronary artery (RCA) (P < .001), and the average increase in CNR was 21.8% for the LCA and 23.5% for the RCA (P < .001). Scores of image quality (P = .77) and diagnostic accuracy for the detection of coronary artery stenoses (sensitivity and specificity: 82% and 89%, respectively, at 3.0 T vs 82% and 88% at 1.5 T; P > .99) were identical or almost identical at both field strengths. CONCLUSION: Coronary MR angiography at 3.0 T is feasible in patients suspected of having coronary artery disease and yields significant increases in SNR and CNR, although current techniques do not result in significantly improved image quality and diagnostic accuracy compared with the quality and accuracy at 1.5 T. (c) RSNA, 2005.

Stereochemistry on Si(001): angular dependence of H2 dissociation.

The angular dependence of the dissociative adsorption of molecular hydrogen at terrace and step sites of vicinal single-domain Si(001) surfaces was investigated by means of molecular beam techniques and optical second-harmonic generation. A strongly anisotropic behavior was observed for terrace adsorption with polar distributions of cos3theta and cos12theta parallel and perpendicular to the dimer, respectively. The D(B)-steps show enhanced reactivity under glancing incidence in the upwards direction. The results are traced back to the directionality of the covalent surface bonds.