Ni-Cu Nanoparticles-Embedded Ag-Based Reflector for High-Efficiency Light-Emitting Diodes.

We investigated the use of a silver reflector embedded with Ni-Cu nanoparticles to achieve low resistance and high reflectivity in GaN-based flip-chip light-emitting diodes. Compared to a single layer of Ag, the NC-NPs/Ag reflector exhibits a higher light reflectance of ~90% at a wavelength of 450 nm, a lower contact resistance of 4.75 × 10-5 II cm², and improved thermal stability after annealing at 400°C. The NC-NPs formed after the annealing process prevents agglomeration of the Ag layer, while also reducing the Schottky barrier height between the p-GaN layer and metal reflector. The LED fabricated with a NC-NPs/Ag reflector exhibited a forward-bias voltage of 3.13 V and an improvement in light output power of 36.6% (at 20 mA), when compared with the LED composed of a Ag SL. This result indicates that the NC-NPs/Ag reflector is a promising p-type reflector for high-intensity light-emitting diodes.

Diagnosis of Tamiflu-Resistant Influenza Virus in Human Nasal Fluid and Saliva Using Surface-Enhanced Raman Scattering.

Influenza viruses cause respiratory infection, spread through respiratory secretions, and are shed into the nasal secretion and saliva specimens. Therefore, nasal fluid and saliva are effective clinical samples for the diagnosis of influenza virus-infected patients. Although several methods have been developed to detect various types of influenza viruses, approaches for detecting mutant influenza viruses in clinical samples are rarely reported. Herein, we report for the first time a surface-enhanced Raman scattering (SERS)-based sensing platform for oseltamivir-resistant pandemic H1N1 (pH1N1) virus detection in human nasal fluid and saliva. By combining SERS-active urchin Au nanoparticles and oseltamivir hexylthiol, an excellent receptor for the pH1N1/H275Y mutant virus, we detected the pH1N1/H275Y virus specifically and sensitively in human saliva and nasal fluid samples. Considering that the current influenza virus infection testing methods do not provide information on the antiviral drug resistance of the virus, the proposed SERS-based diagnostic test for the oseltamivir-resistant virus will inform clinical decisions about the treatment of influenza virus infections, avoiding the unnecessary prescription of ineffective drugs and greatly improving therapy.

Rapid and simple detection of Tamiflu-resistant influenza virus: Development of oseltamivir derivative-based lateral flow biosensor for point-of-care (POC) diagnostics.

We have developed a novel oseltamivir derivative (oseltamivir hexylthiol; OHT) that exhibits a higher binding affinity for Tamiflu-resistant virus (Tamiflu resistance) than for the wild-type virus (Tamiflu-susceptible virus; WT) as an antibody. First, OHT-modified gold nanoparticles (OHT-GNPs) are used in a simple colorimetric assay as nanoprobes for the Tamiflu-resistant virus. In the presence of Tamiflu-resistant virus, they show a colorimetric change from deep red to purple because of the OHT-GNP aggregation driven by strong interactions between OHT and neuraminidase (NA) on the surface of the Tamiflu-resistance. Moreover, the color gradually turns purple as the concentration of the Tamiflu-resistant virus increases, allowing the determination of the presence of the virus with the naked eye. Furthermore, an OHT-based lateral flow assay (LFA) has been developed as a rapid and easy detection device for Tamiflu resistance. It shows detection specificity for various virus concentrations of Tamiflu-resistant virus even for the mixture of WT and Tamiflu-resistant viruses, where the limit of detection (LOD) is 5 × 102 ~ 103 PFU per test (=1 × 104 PFU/mL). It has been confirmed that this platform can provide accurate information on whether a virus exhibits Tamiflu resistance, thus supporting the selection of appropriate treatments using point-of-care (POC) diagnostics.

Self-standing ZnO nanotube/SiO2 core-shell arrays for high photon extraction efficiency in III-nitride emitter.

Self-standing ZnO nanotube (ZNT) arrays were fabricated on the surface of a GaN-based emitter with an indium tin oxide (ITO) transparent layer using a hydrothermal method and temperature cooling down process. For the greater enhancement of photon extraction efficiency, ZNT/SiO2 core-shell nanostructure arrays were fabricated on the emitter with a 430 nm wavelength. The optical output power of ZNT/SiO2 core-shell arrays on the emitter with ITO electrode was remarkably enhanced by 18.5%, 28.1%, and 55.9%, compared to those of ZNTs, ZNRs on an ITO film on an emitter and ITO film on an emitter as a conventional emitter, respectively. The large enhancement in optical output is attributable to the synergistic effect of efficient photon injection from the ITO/GaN layer to ZNTs because of the well-matched refractive indices and wave-guiding, in addition to the superior photon extraction by the SiO2 coating layer on the ZNTs.

Self-assembled indium tin oxide nanoball-embedded omnidirectional reflectors for high photon extraction efficiency in III-nitride ultraviolet emitters.

The control of the refractive index and electrical conductivity in the dielectric layer of omnidirectional reflectors (ODRs) is essential to improve the low efficiency of AlGaN-based UV emitters. Here, we report self-assembled indium tin oxide (ITO) nanoball-embedded omnidirectional reflectors (NODRs) for use in high-efficiency AlGaN-based UV emitters at 365 nm. These NODRs consisted of a reflective Al layer, a self-assembled conducting ITO nanoball layer for current injection and spreading, and nanovoids that provided a low refractive index to achieve highly efficient UV emitters. The NODR was able to realize both high electrical conductivity and reflectivity by decreasing the average refractive index of the ITO nanoball layers. We observed diffuse reflection as well as omnidirectional reflection from the NODR UV emitters because of the corrugated interfaces of the nanovoids, ITO nanoball layer, and Al layer. These structural and optical properties of the NODRs remarkably increased the output power of a UV emitter by a Lambertian enhancement factor of 57% at an injection current of 50 mA at all emission angles compared with that of an ITO film/Al UV emitter.