ABSTRACT
In this work, we find that La-doped BaSnO3 (BLSO) is shown to be a promising electromagnetic shielding transparent conductor. While films grown on industrially practical optoelectronic MgAl2O4 substrates have higher sheet resistance by three orders of magnitude than in previous reports, we show how to recover the sheet resistance close to the single-crystal level by use of an MgO template layer which enables high quality (001)-oriented BLSO epitaxial film growth on (001) MgAl2O4. There is a positive correlation between crystallinity and conductivity; high crystallinity minimizes scattering of free electrons. By applying this design principle to 5-20% doped films, we find that highly crystalline 5% La-doped BLSO films exhibit low sheet resistance of ~ 8.7 Ω â¯ -1, high visible transmittance of ~ 80%, and high X-band electromagnetic shielding effectiveness of ~ 25.9 dB, thus outperforming transparent conducting oxides films of Sn-doped In2O3 and SrMoO3.
ABSTRACT
Transparent La-doped BaSnO3 (BLSO) epitaxial films grown on expensive perovskites show promising conductive properties. However, BLSO films on Al2O3 have a higher sheet resistance by two orders of magnitude. In this research, the sheet resistance of BLSO films is recovered to that of the single-crystalline level by growing (111)-oriented BLSO epitaxial films on (0001)Al2O3 with the assistance of (111)BaZrO3/MgO template bilayer. Their intriguing transparent conductive properties, including high electromagnetic shielding effectiveness (~ 13.2 dB at 10 GHz) and high stability at 700 °C, will promote stable optoelectronic applications in extreme environments with economic benefits.
ABSTRACT
Despite being a requisite for modern transparent electronics, few metals have a sufficiently high infrared transmittance due to the free electron response. Here, upon alloying the correlated metal SrVO3 with BaVO3, the medium wavelength infrared transmittance at a wavelength of 4 µm is found to be 50% higher than those for Sn-doped In2O3 (ITO) and La-doped BaSnO3 (BLSO). The room temperature resistivity of the alloy of â¼100 µΩ cm is 1 order of magnitude lower than those of ITO and BLSO, guaranteeing a profound electromagnetic shielding effectiveness of 22-31 dB at 10 GHz in the X-band. Systematic investigations reveal symmetry breaking of VO6 oxygen octahedra in SrVO3 due to the substitution of Sr2+ with larger Ba2+ ions, localization of electrons in the lower energy V-dyz and dzx orbitals, and stronger correlation effects. The lattice-orbital-charge-coupled engineering of the electronic band structure in correlated metals offers a new design strategy to create super-broad-band transparent conductors with an enhanced shielding capability.
ABSTRACT
The dynamic tuning of ion concentrations has attracted significant attention for creating versatile functionalities of materials, which are impossible to reach using classical control knobs. Despite these merits, the following fundamental questions remain: how do ions affect the electronic bandstructure, and how do ions simultaneously change the electrical and magnetic properties? Here, by annealing platinum-dotted La0.67 Sr0.33 MnO3 films in hydrogen and argon at a lower temperature of 200 °C for several minutes, a reversible change in resistivity is achieved by three orders of magnitude with tailored ferromagnetic magnetization. The transition occurs through the tuning of the double exchange interaction, ascribed to an electron-doping-induced and/or a lattice-expansion-induced modulation, along with an increase in the hydrogen concentration. High reproducibility, long-term stability, and multilevel linearity are appealing for ionic-electric-magnetic coupled applications.
