Chip-based quantum key distribution.

Improvement in secure transmission of information is an urgent need for governments, corporations and individuals. Quantum key distribution (QKD) promises security based on the laws of physics and has rapidly grown from proof-of-concept to robust demonstrations and deployment of commercial systems. Despite these advances, QKD has not been widely adopted, and large-scale deployment will likely require chip-based devices for improved performance, miniaturization and enhanced functionality. Here we report low error rate, GHz clocked QKD operation of an indium phosphide transmitter chip and a silicon oxynitride receiver chip-monolithically integrated devices using components and manufacturing processes from the telecommunications industry. We use the reconfigurability of these devices to demonstrate three prominent QKD protocols-BB84, Coherent One Way and Differential Phase Shift-with performance comparable to state-of-the-art. These devices, when combined with integrated single photon detectors, pave the way for successfully integrating QKD into future telecommunications networks.

Photon pair generation in a silicon micro-ring resonator with reverse bias enhancement.

Photon sources are fundamental components for any quantum photonic technology. The ability to generate high count-rate and low-noise correlated photon pairs via spontaneous parametric down-conversion using bulk crystals has been the cornerstone of modern quantum optics. However, future practical quantum technologies will require a scalable integration approach, and waveguide-based photon sources with high-count rate and low-noise characteristics will be an essential part of chip-based quantum technologies. Here, we demonstrate photon pair generation through spontaneous four-wave mixing in a silicon micro-ring resonator, reporting separately a maximum coincidence-to-accidental (CAR) ratio of 602 ± 37 (for a generation rate of 827kHz), and a maximum photon pair generation rate of 123 MHz ± 11 kHz (with a CAR value of 37). To overcome free-carrier related performance degradations we have investigated reverse biased p-i-n structures, demonstrating an improvement in the pair generation rate by a factor of up to 2 with negligible impact on CAR.

A superconducting nanowire single photon detector on lithium niobate.

Superconducting nanowire single photon detectors (SNSPDs) are a key enabling technology for optical quantum information science. In this paper we demonstrate a SNSPD fabricated on lithium niobate, an important material for high speed integrated photonic circuits. We report a system detection efficiency of 0.15% at a 1 kHz dark count rate with a maximum of ~1% close to the critical current at 1550 nm wavelength for a parallel wire SNSPD with front side illumination. There is clear scope for improving on this performance with further materials optimization. Detector integration with a lithium niobate optical waveguide is simulated, demonstrating the potential for high single photon detection efficiency in an integrated quantum optic circuit.