Effect of Low Pressure on Tetragonal to Cubic Phase Transition of Methylammonium Lead Iodide Perovskite.

The attractive optoelectronic properties of MAPbI3 (MA = CH3NH3), one of the most common halide perovskites, can be complicated by its tetragonal → cubic structural phase transition just above room temperature. We show that decreasing the ambient pressure can move that phase transition by ∼40 °C (at ∼10-3 mbar). Our report also includes control experiments, which show that desorption of water or oxygen can be excluded as possible causes for the change in phase transition temperature. On the basis of diffraction data, we postulate that an optimum volume is required to initiate a T → C phase transition. The pressure-induced phase change in effect stabilizes the tetragonal phase for work around room temperature, even if some natural heating occurs.

Fluorescence Blinking Beyond Nanoconfinement: Spatially Synchronous Intermittency of Entire Perovskite Microcrystals.

Abrupt fluorescence intermittency or blinking is long recognized to be characteristic of single nano-emitters. Extended quantum-confined nanostructures also undergo spatially heterogeneous blinking; however, there is no such precedent in dimensionally unconfined (bulk) materials. Herein, we report multi-level blinking of entire individual organo-lead bromide perovskite microcrystals (volume=0.1-3 µm3 ) under ambient conditions. Extremely high spatiotemporal correlation (>0.9) in intracrystal emission intensity fluctuations signifies effective communication amongst photogenerated carriers at distal locations (up to ca. 4 µm) within each crystal. Fused polycrystalline grains also exhibit this intriguing phenomenon, which is rationalized by correlated and efficient migration of carriers to a few transient nonradiative traps, the nature and population of which determine blinking propensity. Observation of spatiotemporally correlated emission intermittency in bulk semiconductor crystals opens the possibility of designing novel devices involving long-range (mesoscopic) electronic communication.

Pseudohalide (SCN(-))-Doped MAPbI3 Perovskites: A Few Surprises.

Pseudohalide thiocyanate anion (SCN(-)) has been used as a dopant in a methylammonium lead tri-iodide (MAPbI3) framework, aiming for its use as an absorber layer for photovoltaic applications. The substitution of SCN(-) pseudohalide anion, as verified using Fourier transform infrared (FT-IR) spectroscopy, results in a comprehensive effect on the optical properties of the original material. Photoluminescence measurements at room temperature reveal a significant enhancement in the emission quantum yield of MAPbI3-x(SCN)x as compared to MAPbI3, suggestive of suppression of nonradiative channels. This increased intensity is attributed to a highly edge specific emission from MAPbI3-x(SCN)x microcrystals as revealed by photoluminescence microscopy. Fluoresence lifetime imaging measurements further established contrasting carrier recombination dynamics for grain boundaries and the bulk of the doped material. Spatially resolved emission spectroscopy on individual microcrystals of MAPbI3-x(SCN)x reveals that the optical bandgap and density of states at various (local) nanodomains are also nonuniform. Surprisingly, several (local) emissive regions within MAPbI3-x(SCN)x microcrystals are found to be optically unstable under photoirradiation, and display unambiguous temporal intermittency in emission (blinking), which is extremely unusual and intriguing. We find diverse blinking behaviors for the undoped MAPbI3 crystals as well, which leads us to speculate that blinking may be a common phenomenon for most hybrid perovskite materials.

Inorganic Hole Conducting Layers for Perovskite-Based Solar Cells.

Hybrid organic-inorganic semiconducting perovskite photovoltaic cells are usually coupled with organic hole conductors. Here, we report planar, inverse CH3NH3PbI3-xClx-based cells with inorganic hole conductors. Using electrodeposited NiO as hole conductor, we have achieved a power conversion efficiency of 7.3%. The maximum VOC obtained was 935 mV with an average VOC value being 785 mV. Preliminary results for similar cells using electrodeposited CuSCN as hole conductor resulted in devices up to 3.8% in efficiency. The ability to obtain promising cells using NiO and CuSCN expands the presently rather limited range of available hole conductors for perovskite cells.