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1.
Phys Rev Lett ; 118(13): 133604, 2017 Mar 31.
Article in English | MEDLINE | ID: mdl-28409981

ABSTRACT

Photon blockade is a dynamical quantum-nonlinear effect in driven systems with an anharmonic energy ladder. For a single atom strongly coupled to an optical cavity, we show that atom driving gives a decisively larger optical nonlinearity than cavity driving. This enhances single-photon blockade and allows for the implementation of two-photon blockade where the absorption of two photons suppresses the absorption of further photons. As a signature, we report on three-photon antibunching with simultaneous two-photon bunching observed in the light emitted from the cavity. Our experiment constitutes a significant step towards multiphoton quantum-nonlinear optics.

2.
Opt Lett ; 36(14): 2704-6, 2011 Jul 15.
Article in English | MEDLINE | ID: mdl-21765515

ABSTRACT

A novel type of nanolasers, which combines the advantages of photonic crystal lasers and microdisk lasers, has been demonstrated based on InAlGaAs/InGaAs quantum wells using pulsed optical pumping at room temperature. It incorporates the properties of small footprint, small mode volume, and submilliwatt threshold, and favors vertical emission. We believe that this type of laser acts as a promising candidate for highly-integrated on-chip nanolasers in applications for signal processing and index sensing.

3.
Nano Lett ; 10(10): 4134-9, 2010 Oct 13.
Article in English | MEDLINE | ID: mdl-20812716

ABSTRACT

In this contribution we demonstrate a method of synthesizing a hexagonal boron nitride (h-BN) thin film by ambient pressure chemical vapor deposition on polycrystalline Ni films. Depending on the growth conditions, the thickness of the obtained h-BN film is between ∼5 and 50 nm. The h-BN grows continuously on the entire Ni surface and the region with uniform thickness can be up to 20 µm in lateral size which is only limited by the size of the Ni single crystal grains. The hexagonal structure was confirmed by both electron and X-ray diffraction. X-ray photoelectron spectroscopy shows the B/N atomic ratio to be 1:1.12. A large optical band gap (5.92 eV) was obtained from the photoabsorption spectra which suggest the potential usage of this h-BN film in optoelectronic devices.

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