Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS2 Field-Effect Transistors.

Molybdenum disulfide (MoS2) has distinctive electronic and mechanical properties which make it a highly prospective material for use as a channel in upcoming nanoelectronic devices. An analytical modeling framework was used to investigate the I-V characteristics of field-effect transistors based on MoS2. The study begins by developing a ballistic current equation using a circuit model with two contacts. The transmission probability, which considers both the acoustic and optical mean free path, is then derived. Next, the effect of phonon scattering on the device was examined by including transmission probabilities into the ballistic current equation. According to the findings, the presence of phonon scattering caused a decrease of 43.7% in the ballistic current of the device at room temperature when L = 10 nm. The influence of phonon scattering became more prominent as the temperature increased. In addition, this study also considers the impact of strain on the device. It is reported that applying compressive strain could increase the phonon scattering current by 13.3% at L = 10 nm at room temperature, as evaluated in terms of the electrons' effective masses. However, the phonon scattering current decreased by 13.3% under the same condition due to the existence of tensile strain. Moreover, incorporating a high-k dielectric to mitigate the impact of scattering resulted in an even greater improvement in device performance. Specifically, at L = 6 nm, the ballistic current was surpassed by 58.4%. Furthermore, the study achieved SS = 68.2 mV/dec using Al2O3 and an on-off ratio of 7.75 × 104 using HfO2. Finally, the analytical results were validated with previous works, showing comparable agreement with the existing literature.

Hydrogen gas sensing performance of a carbon-doped boron nitride nanoribbon at elevated temperatures.

In this study, computational simulations were used to investigate the performance of a carbon-doped boron nitride nanoribbon (BC2NNR) for hydrogen (H2) gas sensing at elevated temperatures. The adsorption energy and charge transfer were calculated when H2 was simultaneously attached to carbon, boron, and both boron and nitrogen atoms. The sensing ability was further analyzed considering the variations in current-voltage (I-V) characteristics. The simulation results indicated that the energy bandgap of H2 on carbon, boron, and both boron and nitrogen exhibited a marginal effect during temperature variations. However, significant differences were observed in terms of adsorption energy at a temperature of 500 K, wherein the adsorption energy was increased by 99.62% of that observed at 298 K. Additionally, the evaluation of charge transfer indicated that the strongest binding site was achieved at high adsorption energies with high charge transfers. Analysis of the I-V characteristics verified that the currents were considerably affected, particularly when a certain concentration of H2 molecules was added at the highest sensitivity of 15.02% with a bias voltage of 3 V. The sensitivity at 298 K was lower than those observed at 500 and 1000 K. The study findings can form the basis for further experimental investigations on BC2NNR as a hydrogen sensor.

Device performances analysis of p-type doped silicene-based field effect transistor using SPICE-compatible model.

Moore's Law is approaching its end as transistors are scaled down to tens or few atoms per device, researchers are actively seeking for alternative approaches to leverage more-than-Moore nanoelectronics. Substituting the channel material of a field-effect transistors (FET) with silicene is foreseen as a viable approach for future transistor applications. In this study, we proposed a SPICE-compatible model for p-type (Aluminium) uniformly doped silicene FET for digital switching applications. The performance of the proposed device is benchmarked with various low-dimensional FETs in terms of their on-to-off current ratio, subthreshold swing and drain-induced barrier lowering. The results show that the proposed p-type silicene FET is comparable to most of the selected low-dimensional FET models. With its decent performance, the proposed SPICE-compatible model should be extended to the circuit-level simulation and beyond in future work.

Semi-analytical modelling and evaluation of uniformly doped silicene nanotransistors for digital logic gates.

Silicene has attracted remarkable attention in the semiconductor research community due to its silicon (Si) nature. It is predicted as one of the most promising candidates for the next generation nanoelectronic devices. In this paper, an efficient non-iterative technique is employed to create the SPICE models for p-type and n-type uniformly doped silicene field-effect transistors (FETs). The current-voltage characteristics show that the proposed silicene FET models exhibit high on-to-off current ratio under ballistic transport. In order to obtain practical digital logic timing diagrams, a parasitic load capacitance, which is dependent on the interconnect length, is attached at the output terminal of the logic circuits. Furthermore, the key circuit performance metrics, including the propagation delay, average power, power-delay product and energy-delay product of the proposed silicene-based logic gates are extracted and benchmarked with published results. The effects of the interconnect length to the propagation delay and average power are also investigated. The results of this work further envisage the uniformly doped silicene as a promising candidate for future nanoelectronic applications.

An Analytical Conductance Model for Gas Detection Based on a Zigzag Carbon Nanotube Sensor.

Recent advances in nanotechnology have revealed the superiority of nanocarbon species such as carbon nanotubes over other conventional materials for gas sensing applications. In this work, analytical modeling of the semiconducting zigzag carbon nanotube field-effect transistor (ZCNT-FET) based sensor for the detection of gas molecules is demonstrated. We propose new analytical models to strongly simulate and investigate the physical and electrical behavior of the ZCNT sensor in the presence of various gas molecules (CO2, H2O, and CH4). Therefore, we start with the modeling of the energy band structure by acquiring the new energy dispersion relation for the ZCNT and introducing the gas adsorption effects to the band structure model. Then, the electrical conductance of the ZCNT is modeled and formulated while the gas adsorption effect is considered in the conductance model. The band structure analysis indicates that, the semiconducting ZCNT experiences band gap variation after the adsorption of the gases. Furthermore, the bandgap variation influences the conductance of the ZCNT and the results exhibit increments of the ZCNT conductance in the presence of target gases while the minimum conductance shifted upward around the neutrality point. Besides, the I-V characteristics of the sensor are extracted from the conductance model and its variations after adsorption of different gas molecules are monitored and investigated. To verify the accuracy of the proposed models, the conductance model is compared with previous experimental and modeling data and a good consensus is observed. It can be concluded that the proposed analytical models can successfully be applied to predict sensor behavior against different gas molecules.