ABSTRACT
In semiconductor manufacturing, the sublimation drying process is crucial but poorly understood-particularly regarding the solidification of agents such as cyclohexanol on Si substrates. This knowledge gap results in inconsistent film properties and risks such as structural collapse. To address this critical gap in knowledge, the present study focused on an in-depth examination of the nucleation behavior exhibited by cyclohexanol during its cooling and solidification on Si substrates. Using a digital camera (GoPro10), the solidification process in experiments was recorded for a range of cooling rates and using substrates with distinct surface patterns. To evaluate temporal changes in crystal nucleation, video images were visually checked, and the temporal changes in the number of nuclei were examined. For a more quantitative analysis, the least-squares method was successfully employed to correlate mathematical equations to time-dependent nucleation data. Interestingly, the outcomes revealed significant correlations between the nucleation rate, cooling rate, and substrate pattern. In summary, this research offers a robust experimental framework for understanding the complex solidification behavior of cyclohexanol on Si substrates. The study contributes both qualitative and quantitative analyses, enriching our understanding of the variables that govern the solidification process, which has significant implications for enhancing the overall reliability and efficiency of semiconductor manufacturing.
ABSTRACT
Sublimation drying is used in the drying process of semiconductor device manufacturing. However, the solidification behavior mechanics of sublimation agents on substrates has not been clarified. Therefore, the properties of solidified films within substrate surfaces can become nonuniform, leading to their collapse. This study aimed to analyze the interface growth behavior during the cooling and solidification of a water/ice system as a basic case and to clarify the dynamic mechanism of the solidification behavior of liquid films on Si substrates. The solidification behavior of a water/ice system on Si substrates was captured on a video at different cooling rates. The recorded video was subjected to a digital image analysis to examine the crystal morphology and quantify the interface growth rate. The least-squares method with kinetic formulas was used to evaluate the feasibility of fitting the temperature variation to the interface growth rate. A visual examination of the morphology of interfacial growth revealed that it can be classified into four morphologies. The proposed kinetic equation describes the experimental results regarding the temperature dependence of the interfacial growth rate. Through image analysis, the interface growth rate of water and ice was quantified, and an evaluation formula was proposed.
