Gun energy filter for a low energy electron microscope.

In a Low Energy Electron Microscope (LEEM) the sample is illuminated with an electron beam with typical electron landing energies from 0-100 eV. The energy spread of the electron beam is determined by the characteristics of the electron source. For the two most commonly used electron sources, LaB6 and cold field emission W, typical energy spreads ΔE are 0.75 and 0.25 eV at full width half maximum, respectively. Here we present a design for a LEEM gun energy filter, that reduces ΔE to ∼100 meV. Such a filter has been incorporated in the IBM/SPECS AC-LEEM system at IBM. Experimental results are presented and found to be in excellent agreement with expectations.

Spatially Selective, High-Density Placement of Polyfluorene-Sorted Semiconducting Carbon Nanotubes in Organic Solvents.

High-performance logic based on carbon nanotubes (CNTs) requires high-density arrays of selectively placed semiconducting CNTs. Although polymer-wrapping methods can allow CNTs to be sorted to a >99.9% semiconducting purity, patterning these polymer-wrapped CNTs is an outstanding problem. We report the directed self-assembly of polymer-coated semiconducting CNTs using self-assembled monolayers that bind CNTs into arrays of patterned trenches. We demonstrate that CNTs can be placed into 100 nm wide HfO2 trenches with an electrical connection yield as high as 90% and into 50 nm wide trenches with a yield as high as 70%. Our directed self-assembly method is an important step forward in pitch scaling.

Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale, single-domain graphene.

Graphene epitaxy on the Si face of a SiC wafer offers monolayer graphene with unique crystal orientation at the wafer-scale. However, due to carrier scattering near vicinal steps and excess bilayer stripes, the size of electrically uniform domains is limited to the width of the terraces extending up to a few microns. Nevertheless, the origin of carrier scattering at the SiC vicinal steps has not been clarified so far. A layer-resolved graphene transfer (LRGT) technique enables exfoliation of the epitaxial graphene formed on SiC wafers and transfer to flat Si wafers, which prepares crystallographically single-crystalline monolayer graphene. Because the LRGT flattens the deformed graphene at the terrace edges and permits an access to the graphene formed at the side wall of vicinal steps, components that affect the mobility of graphene formed near the vicinal steps of SiC could be individually investigated. Here, we reveal that the graphene formed at the side walls of step edges is pristine, and scattering near the steps is mainly attributed by the deformation of graphene at step edges of vicinalized SiC while partially from stripes of bilayer graphene. This study suggests that the two-step LRGT can prepare electrically single-domain graphene at the wafer-scale by removing the major possible sources of electrical degradation.

Physically unclonable cryptographic primitives using self-assembled carbon nanotubes.

Information security underpins many aspects of modern society. However, silicon chips are vulnerable to hazards such as counterfeiting, tampering and information leakage through side-channel attacks (for example, by measuring power consumption, timing or electromagnetic radiation). Single-walled carbon nanotubes are a potential replacement for silicon as the channel material of transistors due to their superb electrical properties and intrinsic ultrathin body, but problems such as limited semiconducting purity and non-ideal assembly still need to be addressed before they can deliver high-performance electronics. Here, we show that by using these inherent imperfections, an unclonable electronic random structure can be constructed at low cost from carbon nanotubes. The nanotubes are self-assembled into patterned HfO2 trenches using ion-exchange chemistry, and the width of the trench is optimized to maximize the randomness of the nanotube placement. With this approach, two-dimensional (2D) random bit arrays are created that can offer ternary-bit architecture by determining the connection yield and switching type of the nanotube devices. As a result, our cryptographic keys provide a significantly higher level of security than conventional binary-bit architecture with the same key size.

Strain-driven mound formation of substrate under epitaxial nanoparticles.

We observe the growth of crystalline SiC nanoparticles on Si(001) at 900 °C using in situ electron microscopy. Following nucleation and growth of the SiC, there is a massive migration of Si, forming a crystalline Si mound underneath each nanoparticle that lifts it 4-5 nm above the initial growth surface. The volume of the Si mounds is roughly five to seven times the volume of the SiC nanoparticles. We propose that relaxation of strain drives the mound formation. This new mechanism for relieving interfacial strain, which involves a dramatic restructuring of the substrate, is in striking contrast to the familiar scenario in which only the deposited material restructures to relieve strain.

Toward high-performance digital logic technology with carbon nanotubes.

The slow-down in traditional silicon complementary metal-oxide-semiconductor (CMOS) scaling (Moore's law) has created an opportunity for a disruptive innovation to bring the semiconductor industry into a postsilicon era. Due to their ultrathin body and ballistic transport, carbon nanotubes (CNTs) have the intrinsic transport and scaling properties to usher in this new era. The remaining challenges are largely materials-related and include obtaining purity levels suitable for logic technology, placement of CNTs at very tight (∼5 nm) pitch to allow for density scaling and source/drain contact scaling. This review examines the potential performance advantages of a CNT-based computing technology, outlines the remaining challenges, and describes the recent progress on these fronts. Although overcoming these issues will be challenging and will require a large, sustained effort from both industry and academia, the recent progress in the field is a cause for optimism that these materials can have an impact on future technologies.

Surface selective one-step fabrication of carbon nanotube thin films with high density.

Thin films of carbon nanotubes (CNTs) are fabricated from solution using a one-step directed assembly strategy. Very high surface selectivity and exceptionally high CNT densities can be observed in small features with complex shapes. This directed assembly technique makes use of minimum amounts of CNTs and low toxicity solvents, and can be applied to metallic, semiconducting and mixed CNTs for fabrication of thin films over macroscopic areas. The thin films obtained with this approach are used for thin-film transistor (TFT) fabrication, and their electrical characterization is described.

Layer-resolved graphene transfer via engineered strain layers.

The performance of optimized graphene devices is ultimately determined by the quality of the graphene itself. Graphene grown on copper foils is often wrinkled, and the orientation of the graphene cannot be controlled. Graphene grown on SiC(0001) via the decomposition of the surface has a single orientation, but its thickness cannot be easily limited to one layer. We describe a method in which a graphene film of one or two monolayers grown on SiC is exfoliated via the stress induced with a Ni film and transferred to another substrate. The excess graphene is selectively removed with a second exfoliation process with a Au film, resulting in a monolayer graphene film that is continuous and single-oriented.

Efficient and bright organic light-emitting diodes on single-layer graphene electrodes.

Organic light-emitting diodes are emerging as leading technologies for both high quality display and lighting. However, the transparent conductive electrode used in the current organic light-emitting diode technologies increases the overall cost and has limited bendability for future flexible applications. Here we use single-layer graphene as an alternative flexible transparent conductor, yielding white organic light-emitting diodes with brightness and efficiency sufficient for general lighting. The performance improvement is attributed to the device structure, which allows direct hole injection from the single-layer graphene anode into the light-emitting layers, reducing carrier trapping induced efficiency roll-off. By employing a light out-coupling structure, phosphorescent green organic light-emitting diodes exhibit external quantum efficiency >60%, while phosphorescent white organic light-emitting diodes exhibit external quantum efficiency >45% at 10,000 cd m(-2) with colour rendering index of 85. The power efficiency of white organic light-emitting diodes reaches 80 lm W(-1) at 3,000 cd m(-2), comparable to the most efficient lighting technologies.

High-density integration of carbon nanotubes via chemical self-assembly.

Carbon nanotubes have potential in the development of high-speed and power-efficient logic applications. However, for such technologies to be viable, a high density of semiconducting nanotubes must be placed at precise locations on a substrate. Here, we show that ion-exchange chemistry can be used to fabricate arrays of individually positioned carbon nanotubes with a density as high as 1 × 10(9) cm(-2)-two orders of magnitude higher than previous reports. With this approach, we assembled a high density of carbon-nanotube transistors in a conventional semiconductor fabrication line and then electrically tested more than 10,000 devices in a single chip. The ability to characterize such large distributions of nanotube devices is crucial for analysing transistor performance, yield and semiconducting nanotube purity.

Large-area graphene single crystals grown by low-pressure chemical vapor deposition of methane on copper.

Graphene single crystals with dimensions of up to 0.5 mm on a side were grown by low-pressure chemical vapor deposition in copper-foil enclosures using methane as a precursor. Low-energy electron microscopy analysis showed that the large graphene domains had a single crystallographic orientation, with an occasional domain having two orientations. Raman spectroscopy revealed the graphene single crystals to be uniform monolayers with a low D-band intensity. The electron mobility of graphene films extracted from field-effect transistor measurements was found to be higher than 4000 cm(2) V(-1) s(-1) at room temperature.

Spatially-resolved structure and electronic properties of graphene on polycrystalline Ni.

We have used in situ low-energy electron microscopy (LEEM) to correlate the atomic and electronic structure of graphene films on polycrystalline Ni with nm-scale spatial resolution. Spatially resolved electron scattering measurements show that graphene monolayers formed by carbon segregation do not support the π-plasmon of graphene, indicating strong covalent bonding to the Ni. Graphene bilayers have the Bernal stacking characteristic of graphite and show the expected plasmon loss at 6.5 eV. The experimental results, in agreement with first-principles calculations, show that the π-band structure of free-standing graphene appears only in films with a thickness of at least two layers and demonstrate the sensitivity of the plasmon loss to the electronic structure.

Directed assembly of single-walled carbon nanotubes via drop-casting onto a UV-patterned photosensitive monolayer.

We report the use of a novel UV-sensitive self-assembled monolayer to selectively deposit single-walled carbon nanotubes from solution using heterogeneous surface wettability. This process combines ubiquitous photopatterning techniques with simple solution processing to yield highly selective and densely packed carbon nanotube patterns. The essential concept behind this process is the change in surface chemistry caused by the UV-induced monolayer reaction. Selective deposition of carbon nanotubes was achieved by drop-casting, and the resulting films show local ordering, indicating that further development of this process will lead to simple technique for large-scale integration.

Control of Si nanowire growth by oxygen.

Semiconductor nanowires formed using the vapor-liquid-solid mechanism are routinely grown in many laboratories, but a comprehensive understanding of the key factors affecting wire growth is still lacking. In this paper we show that, under conditions of low disilane pressure and higher temperature, long, untapered Si wires cannot be grown, using Au catalyst, without the presence of oxygen. Exposure to oxygen, even at low levels, reduces the diffusion of Au away from the catalyst droplets. This allows the droplet volumes to remain constant for longer times and therefore permits the growth of untapered wires. This effect is observed for both gas-phase and surface-bound oxygen, so the source of oxygen is unimportant. The control of oxygen exposure during growth provides a new tool for the fabrication of long, uniform-diameter structures, as required for many applications of nanowires.

Field-effect transistors assembled from functionalized carbon nanotubes.

We have fabricated field-effect transistors from carbon nanotubes using a novel selective placement scheme. We use carbon nanotubes that are covalently bound to molecules containing a hydroxamic acid functionality. The functionalized nanotubes bind strongly to basic metal oxide surfaces, but not to silicon dioxide. Upon annealing, the functionalization is removed, restoring the electronic properties of the nanotubes. The devices thus fabricated show excellent electrical characteristics.

Quantifying electrochemical nucleation and growth of nanoscale clusters using real-time kinetic data.

Electrochemical techniques are used widely for the fabrication of nanostructured materials, yet a quantitative understanding of nucleation and growth remains elusive. Here we probe electrochemical nucleation and growth of individual nanoclusters in real time by combining current-time measurements with simultaneous video imaging. We show discrepancies between the growth kinetics measured for individual nanoclusters and the predictions of models, and we describe a significant revision to conventional models that can explain the results. This improved understanding of nucleation and growth allows a more quantitative approach to the electrochemical fabrication of nanoscale structures.

Tungsten oxide nanowire growth by chemically induced strain.

We have investigated the formation of tungsten oxide nanowires under different chemical vapor deposition (CVD) conditions. We find that exposure of oxidized tungsten films to hydrogen and methane at 900 degrees C leads to the formation of a dense array of typically 10 nm diameter nanowires. Structural and chemical analysis shows that the wires are crystalline WO3. We propose a chemically driven whisker growth mechanism in which interfacial strain associated with the formation of tungsten carbide stimulates nanowire growth. This might be a general concept, applicable also to other nanowire systems.