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1.
Nat Nanotechnol ; 18(5): 456-463, 2023 May.
Article in English | MEDLINE | ID: mdl-37106051

ABSTRACT

Two-dimensional (2D) materials are promising candidates for future electronics due to their excellent electrical and photonic properties. Although promising results on the wafer-scale synthesis (≤150 mm diameter) of monolayer molybdenum disulfide (MoS2) have already been reported, the high-quality synthesis of 2D materials on wafers of 200 mm or larger, which are typically used in commercial silicon foundries, remains difficult. The back-end-of-line (BEOL) integration of directly grown 2D materials on silicon complementary metal-oxide-semiconductor (CMOS) circuits is also unavailable due to the high thermal budget required, which far exceeds the limits of silicon BEOL integration (<400 °C). This high temperature forces the use of challenging transfer processes, which tend to introduce defects and contamination to both the 2D materials and the BEOL circuits. Here we report a low-thermal-budget synthesis method (growth temperature < 300 °C, growth time ≤ 60 min) for monolayer MoS2 films, which enables the 2D material to be synthesized at a temperature below the precursor decomposition temperature and grown directly on silicon CMOS circuits without requiring any transfer process. We designed a metal-organic chemical vapour deposition reactor to separate the low-temperature growth region from the high-temperature chalcogenide-precursor-decomposition region. We obtain monolayer MoS2 with electrical uniformity on 200 mm wafers, as well as a high material quality with an electron mobility of ~35.9 cm2 V-1 s-1. Finally, we demonstrate a silicon-CMOS-compatible BEOL fabrication process flow for MoS2 transistors; the performance of these silicon devices shows negligible degradation (current variation < 0.5%, threshold voltage shift < 20 mV). We believe that this is an important step towards monolithic 3D integration for future electronics.

2.
Opt Lett ; 29(13): 1470-2, 2004 Jul 01.
Article in English | MEDLINE | ID: mdl-15259716

ABSTRACT

We demonstrate a novel method of generating a multiwavelength pulse train by use of time-lens compression. In addition to pulse compression, this time lens simultaneously displaces the pulses according to their center wavelengths, resulting in a temporally evenly spaced multiwavelength pulse train. We further demonstrate a new aberration-correction technique based on the temporal analog of a spatial correction lens to improve the quality of the compressed pulses. Through the use of cw distributed-feedback lasers and electro-optic phase modulators, the all-fiber system allows complete tunability of temporal spacing, spectral profile, and repetition rate.

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