Invited article: design techniques and noise properties of ultrastable cryogenically cooled sapphire-dielectric resonator oscillators.

We review the techniques used in the design and construction of cryogenic sapphire oscillators at the University of Western Australia over the 18 year history of the project. We describe the project from its beginnings when sapphire oscillators were first developed as low-noise transducers for gravitational wave detection. Specifically, we describe the techniques that were applied to the construction of an interrogation oscillator for the PHARAO Cs atomic clock in CNES, in Toulouse France, and to the 2006 construction of four high performance oscillators for use at NMIJ and NICT, in Japan, as well as a permanent secondary frequency standard for the laboratory at UWA. Fractional-frequency fluctuations below 6 x 10(-16) at integration times between 10 and 200 s have been repeatedly achieved.

Novel interferometric frequency discriminators for low noise microwave applications.

New configurations of interferometric frequency discriminators (FD) for frequency stabilization of microwave oscillators are examined. The new FDs are arranged in single directional (SD) (patented), bi-directional (BD) (patent pending), and dual reflection (DR) (patent pending) configurations. In the SD configuration, the signals reflected off and transmitted through the resonator separately pass through different arms of the interferometer. In the BD configuration, microwaves pass in both directions through each arm of the interferometer. In the DR configuration, microwaves are reflected from the resonator as well as the compensating arm. The FD sensitivity is compared with that for the conventional interferometric FD and found to be 6 dB greater in the BD configuration. Because no circulator is required within the interferometer in either the BD or the DR FD, the discriminator's phase noise floor is not limited by the circulator contribution.

Analysis of the rutile-ring method of frequency-temperature compensating a high-Q whispering gallery sapphire resonator.

The rutile-ring method of dielectrically frequency-temperature compensating a high-Q whispering gallery (WG) sapphire resonator is presented. Two and three-dimensional finite element (FE) analysis has been implemented to design and analyze the performance of such resonators, with excellent agreement between theory and experiment. A high-Q factor of 30 million at 13 GHz and compensation temperature of 56 K was obtained. It is shown the frequency-temperature compensation can occur either because the rutile adds a small perturbation to the sapphire resonator or because of a mode interaction with a resonant mode in the rutile. The characteristics of both of these methods are described, and it is shown that for high frequency stability, it is best to compensate perturbatively.

Cryogenic microwave amplifiers for precision measurements.

The noise performance of two cryogenic HEMT amplifiers has been studied. The effective noise temperature for each amplifier is shown to be close to the 6 K thermodynamic temperature before a power threshold of about -70 dBm is achieved.

Frequency-temperature compensation in Ti(3+) and Ti(4+ ) doped sapphire whispering gallery mode resonators.

A new method of compensating the frequency-temperature dependence of high-and monolithic sapphire dielectric resonators near liquid nitrogen temperature is presented. This is achieved by doping monocrystalline sapphire with Ti(3+) ions. This technique offers significant advantages over other methods.

High-Q sapphire-rutile frequency-temperature compensated microwave dielectric resonators.

A sapphiro-rutile composite resonator was constructed from a cylindrical sapphire monocrystal with two thin disks of monocrystal rutile held tightly against the ends. Because rutile exhibits low loss and an opposite temperature coefficient of permittivity to sapphire, it is an ideal material for compensating the frequency-temperature dependence of a sapphire resonator. Most of the electromagnetic modes in the composite structure exhibited turning points (or compensation points) in the frequency-temperature characteristic. The temperatures of compensation for the WG quasi TM modes were measured to be below 90 K with Q-factors of the order of a few million depending on the mode. For WG quasi TE modes, the temperatures of compensation were measured to be between 100 to 160 K with Q-factors of the order of a few hundreds of thousands, depending on the mode. The second derivatives of the compensation points were measured to be of the order 0.1 ppm/K(2 ), which agreed well with the predicted values.