ABSTRACT
Here we report on the discovery of a ternary silicon titanium nitride with the general composition (Si1-x,Tix)3N4 with x = 0 < x < 1 and spinel-type crystal structure. The novel nitride is formed from an amorphous silicon titanium nitride (SiTiN) precursor under high-pressure/high-temperature conditions in a large volume high-pressure device. Under the conditions of 15-20 GPa and 1800-2000 °C, spinel-type γ-Si3N4 and rock salt-type c-TiN are formed. In addition, crystals of the discovered nano-sized ternary phase (Si1-x,Tix)3N4 embedded in γ-Si3N4 are identified. The ternary compound is formed due to kinetically-controlled synthesis conditions and is analyzed to exhibit the spinel-type structure with ca. 8 atom% of Ti. The Ti atoms occur in both Ti3+ and Ti4+ oxidation states and are located on the Si sites. The ternary nano-crystals have to be described as (Si,Ti)3N4 with N-vacancies resulting in the general composition (Si4+1-x Ti4+x-δTi3+δ)3N4-δ.
ABSTRACT
We report the first oxynitride of tin, Sn2 N2 O (SNO), exhibiting a Rh2 S3 -type crystal structure with space group Pbcn. All Sn atoms are in six-fold coordination, in contrast to Si in silicon oxynitride (Si2 N2 O) and Ge in the isostructural germanium oxynitride (Ge2 N2 O), which appear in four-fold coordination. SNO was synthesized at 20â GPa and 1200-1500 °C in a large volume press. The recovered samples were characterized by synchrotron powder X-ray diffraction and single-crystal electron diffraction in the TEM using the automated diffraction tomography (ADT) technique. The isothermal bulk modulus was determined as Bo =193(5)â GPa by using in-situ synchrotron X-ray diffraction in a diamond anvil cell. The structure model is supported by DFT calculations. The enthalpy of formation, the bulk modulus, and the band structure have been calculated.
