ABSTRACT
Indium arsenide (InAs) near surface quantum wells (QWs) are promising for the fabrication of semiconductor-superconductor heterostructures given that they allow for a strong hybridization between the two-dimensional states in the quantum well and the ones in the superconductor. In this work, we present results for InAs QWs in the quantum Hall regime placed in proximity of superconducting NbTiN. We observe a negative downstream resistance with a corresponding reduction of Hall (upstream) resistance, consistent with a very high Andreev conversion. We analyze the experimental data using the Landauer-Büttiker formalism, generalized to allow for Andreev reflection processes. We attribute the high efficiency of Andreev conversion in our devices to the large transparency of the InAs/NbTiN interface and the consequent strong hybridization of the QH edge modes with the states in the superconductor.
ABSTRACT
The critical current response to an applied out-of-plane magnetic field in a Josephson junction provides insight into the uniformity of its current distribution. In Josephson junctions with semiconducting weak links, the carrier density, and therefore the overall current distribution, can be modified electrostatically via metallic gates. Here, we show local control of the current distribution in an epitaxial Al-InAs Josephson junction equipped with five minigates. We demonstrate that not only can the junction width be electrostatically defined but also the current profile can be locally adjusted to form superconducting quantum interference devices. Our studies show enhanced edge conduction in such long junctions, which can be eliminated by minigates to create a uniform current distribution.
