1.
Phys Rev Lett
; 84(4): 690-3, 2000 Jan 24.
Article
in English
| MEDLINE
| ID: mdl-11017348
ABSTRACT
An H plasma has a remarkable effect on dislocation mobility in silicon, reducing its activation energy to 1.2 eV. Applying density functional theory to the interactions of H and H2 with the core of the 90 degrees partial dislocation in Si, we have identified a path for motion involving kink formation and migration at hydrogenated core bonds which conforms exactly to the experimentally measured activation energy.
2.
Phys Rev B Condens Matter
; 52(7): 4951-4955, 1995 Aug 15.
Article
in English
| MEDLINE
| ID: mdl-9981679
3.
Phys Rev B Condens Matter
; 51(19): 13138-13145, 1995 May 15.
Article
in English
| MEDLINE
| ID: mdl-9978111
4.
Phys Rev B Condens Matter
; 50(23): 17717-17720, 1994 Dec 15.
Article
in English
| MEDLINE
| ID: mdl-9976199
5.
Phys Rev B Condens Matter
; 50(9): 5937-5940, 1994 Sep 01.
Article
in English
| MEDLINE
| ID: mdl-9976962