Conductivity control of as-grown branched indium tin oxide nanowire networks.

Branched indium tin oxide (ITO) nanowire networks are promising candidates for transparent conductive oxide applications, such as optoelectronic electrodes, due to their high porosity. However, these branched networks also present new challenges in assessing conductivity. Conventional four-point probe techniques cannot separate the effect of porosity on the long-range conductivity from the intrinsic material conductivity. Here we compare the average nanoscale conductivity within the film measured by terahertz time-domain spectroscopy (THz-TDS) to the film conductivity measured by four-point probe in a branched ITO nanowire network. Both techniques report conductivity increases with deposition flux rate from 0.5 to 3.0 nm s(-1), achieving a maximum of ~ 10 (Ω cm)(-1). Modeling the THz-TDS conductivity data using the Drude-Smith model allows us to distinguish between conductivity increases resulting from morphological changes and those resulting from the intrinsic properties of the ITO. In particular, the intrinsic material conductivity within the nanowires can be extracted, and is found to reach a maximum of ~ 3000 (Ω cm)(-1), comparable to bulk ITO. To determine the mechanism responsible for increasing conductivity with flux rate, we characterize dopant concentration and morphological changes (i.e., to branching behavior, nanowire diameter and nucleation layers). We propose that changes in the electron density, primarily due to changes in O-vacancy concentration at different flux rates, are responsible for the observed conductivity increase. This understanding will assist balancing structural and conductivity requirements in applications of transparent conductive oxide networks.

Effective mass anisotropy of hot electrons in nonparabolic conduction bands of n-doped InGaAs films using ultrafast terahertz pump-probe techniques.

The anisotropic effective mass of energetic electrons in an isotropic, nonparabolic conduction band is revealed using ultrafast THz-pump-THz-probe techniques in a n-doped InGaAs semiconductor thin film. A microscopic theory is applied to identify the origin of the observed anisotropy and to show that the self-consistent light-matter coupling contributes significantly to the THz response.

Terahertz pulse induced intervalley scattering in photoexcited GaAs.

Nonlinear transient absorption bleaching of intense few-cycle terahertz (THz) pulses is observed in photoexcited GaAs using opticalpump--THz-probe techniques. A simple model of the electron transport dynamics shows that the observed nonlinear response is due to THz-electric- field-induced intervalley scattering over sub-picosecond time scales as well as an increase in the intravalley scattering rate attributed to carrier heating. Furthermore, the nonlinear nature of the THz pulse transmission at high peak fields leads to a measured terahertz conductivity in the photoexcited GaAs that deviates significantly from the Drude behavior observed at low THz fields, emphasizing the need to explore nonlinear THz pulse interactions with materials in the time domain.

Generation of 1.5 microJ single-cycle terahertz pulses by optical rectification from a large aperture ZnTe crystal.

We demonstrate the generation muJ-level, single-cycle terahertz pulses by optical rectification from a large-aperture ZnTe single crystal wafer. Energies up to 1.5 muJ per pulse and a spectral range extending to 3 THz were obtained using a 100 Hz Ti:sapphire laser source and a 75-mmdiameter, 0.5-mm-thick, (110) ZnTe crystal, corresponding to an average power of 150 muW and an energy conversion efficiency of 3.1 x 10(-5). We also demonstrate real-time imaging of the focused terahertz beam using a pyroelectric infrared camera.

Picosecond transient photoconductivity in functionalized pentacene molecular crystals probed by terahertz pulse spectroscopy.

We have measured transient photoconductivity in functionalized pentacene molecular crystals using ultrafast optical pump-terahertz probe techniques. The single crystal samples were excited using 800 nm, 100 fs pulses, and the change in transmission of time-delayed, subpicosecond terahertz pulses was used to probe the photoconducting state over a temperature range from 10 to 300 K. A subpicosecond rise in photoconductivity is observed, suggesting that mobile carriers are a primary photoexcitation. At times longer than 4 ps, a power-law decay is observed consistent with dispersive transport.