Preparation and characterization of various PVPylated divalent metal-doped ferrite nanoparticles for magnetic hyperthermia.

There is an incessant demand to keep improving on the heating responses of polymeric magnetic nanoparticles (MNPs) under magnetic excitation, particularly in the pursuit for them to be utilized for clinical hyperthermia applications. Herein, we report the fabrication of a panel of PVP-capped divalent metal-doped MFe2O4 (M ≅ Co, Ni, Zn, Mg, and Sn) MNPs prepared via the Ko-precipitation Hydrolytic Basic (KHB) methodology and assess their magneto-thermal abilities. The physiochemical, structural, morphological, compositional, and magnetic properties of the doped ferrites were fully characterized using various techniques mainly TEM, XRD, EDX, FTIR, and VSM. The obtained doped MNPs exhibited stabilized quasi-spherical sized particles (10-17 nm), pure well-crystallized cubic spinel phases, and high saturation magnetizations (Ms = 26-81 emu g-1). In response to a clinically-safe alternating magnetic field (AMF) (f = 332.8 kHz and H = 170 Oe), distinctive heating responses of these doped ferrites were attained. Hyperthermia temperatures of 42 °C can be reached very fast in only ∼5 min, with heating temperatures slowly increasing to reach up to 55 °C. The highest heating performance was observed for PVP-NiFe2O4 and the lowest for PVP-Sn-doped NPs (SAR values: PVP-NiFe2O4 > PVP-CoFe2O4 > PVP-ZnFe2O4 > PVP-MgFe2O4 > PVP-SnFe2O4). This trend was found to be directly correlated to their observed magnetic saturation and anisotropy. Heating efficiencies and specific SAR values as functions of concentration, frequency, and amplitude were also systematically investigated. Finally, cytotoxicity assay was conducted on aqueous dispersions of the doped ferrite NPs, proving their biocompatibility and safety profiles. The PVPylated metal-doped ferrite NPs prepared here, particularly Ni- and Co-doped ferrites, are promising vehicles for potential combined magnetically-triggered biomedical hyperthermia applications.

Preparation and Optical Properties of PVDF-CaFe2O4 Polymer Nanocomposite Films.

In this work, a synthesis technique for highly homogeneous PVDF-CaFe2O4 polymer films direct from solution was developed. The structural characterizations were conducted using XRD, FTIR, and ESEM experimental techniques. The XRD characteristic peaks of CaFe2O4 nanoparticles revealed a polycrystalline structure. The average crystallite size for CaFe2O4 was calculated to be 17.0 nm. ESEM micrographs of PVDF nanocomposites containing 0.0, 0.25, 0.75, and 1.0 wt% of CaFe2O4 showed smooth surface topography. The direct Edir and indirect Eind band gap energies for the PVDF-CaFe2O4 nanocomposites were decreased with the additions of 0.0-1.0 wt% CaFe2O4. In addition, the refractive index (n0) increased from 3.38 to 10.36, and energy gaps (Eg) decreased from 5.50 to 4.95 eV. The nonlinear refractive index (n2) for the PVDF-CaFe2O4 nanocomposites was improved with the addition of CaFe2O4 nanoparticles, exceeding those reported in the literature for PVC, PVA, and PMMA nanocomposites. Therefore, the PVDF-CaFe2O4 nanocomposites are expected to take the lead in optoelectronic applications because of their unusual optical properties.

Luminescent MoS2 Quantum Dots with Tunable Operating Potential for Energy-Enhanced Aqueous Supercapacitors.

Wide band gap luminescent MoS2 quantum dots (QDs) and MoS2 nanocrystals (NCs) have been synthesized by using laser-assisted chemical vapour deposition and used as an electrode material in supercapacitors. Size-dependent properties of the MoS2 QDs and NCs were examined by UV-vis absorption, photoluminescence, and Raman spectroscopy. The morphological evolution of the NCs and QDs were characterized by using field emission scanning electron microscopy, high-resolution transmission electron microscopy, and atomic force microscopy. The as-synthesized uniform QDs with a size of ∼2 nm exhibited an extended electrochemical potential window of 0.9 V with a specific capacitance value of 255 F/g, while the NCs values were 205 F/g and 0.8 V and the pristine MoS2 with values of 105 F/g and 0.6 V at a scan rate of 1 mV s-1. A shorter conductive pathway and 3D quantum confinement of MoS2 QDs that exhibited a higher number of active sites ensure that the efficient charge storage kinetics along with the intercalation processes at the available edge sites enable significant widening of operating potential window and enhance the capacitance. The symmetric device constructed with the QDs showed a remarkable device capacitance of 50 F/g at a scan rate of 1 mV s-1 with an energy density of ∼5.7 W h kg-1 and achieved an excellent cycle stability of 10,000 consecutive cycles with ∼95% capacitance retention.

From cow manure to bioactive carbon dots: a light-up probe for bioimaging investigations, glucose detection and potential immunotherapy agent for melanoma skin cancer.

Bioactive carbon dots (C-dots) with ca. 4 nm were successfully produced with singular photophysical properties, low-toxicity and interesting immunological response. The optical properties of the C-dots were investigated and the "light-up" behaviour enabled them to be explored in glucose detection and bioimaging experiments (mitochondrial selective probe). C-dots were not selective to the tumour region and several fluorescent spots were visualized spread on animal bodies. The histology investigations showed that cancer-bearing mice treated with C-dots presented a large number of regions with necrosis and inflammatory infiltrates, which were not identified for cancer-bearing mice without the treatment. These results suggested that C-dots have the potential to be explored as an immune therapy agent for melanoma skin cancer.

Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy technique.

InGaAs quantum wire (QWr) intermediate-band solar cell-based nanostructures grown by molecular beam epitaxy are studied. The electrical and interface properties of these solar cell devices, as determined by current-voltage (I-V) and capacitance-voltage (C-V) techniques, were found to change with temperature over a wide range of 20-340 K. The electron and hole traps present in these devices have been investigated using deep-level transient spectroscopy (DLTS). The DLTS results showed that the traps detected in the QWr-doped devices are directly or indirectly related to the insertion of the Si δ-layer used to dope the wires. In addition, in the QWr-doped devices, the decrease of the solar conversion efficiencies at low temperatures and the associated decrease of the integrated external quantum efficiency through InGaAs could be attributed to detected traps E1QWR_D, E2QWR_D, and E3QWR_D with activation energies of 0.0037, 0.0053, and 0.041 eV, respectively.

Photodegradation of organic pollutants RhB dye using UV simulated sunlight on ceria based TiO2 nanomaterials for antibacterial applications.

To photo-catalytically degrade RhB dye using solar irradiation, CeO2 doped TiO2 nanocomposites were synthesized hydrothermally at 700 °C for 9 hrs. All emission spectra showed a prominent band centered at 442 nm that was attributed to oxygen related defects in the CeO2-TiO2 nanocrystals. Two sharp absorption bands at 1418 cm-1 and 3323 cm-1 were attributed to the deformation and stretching vibration, and bending vibration of the OH group of water physisorbed to TiO2, respectively. The photocatalytic activities of Ce-TiO2 nanocrystals were investigated through the degradation of RhB under UV and UV+ visible light over a period of 8 hrs. After 8 hrs, the most intense absorption peak at 579 nm disappeared under the highest photocatalytic activity and 99.89% of RhB degraded under solar irradiation. Visible light-activated TiO2 could be prepared from metal-ion incorporation, reduction of TiO2, non-metal doping or sensitizing of TiO2 using dyes. Studying the antibacterial activity of Ce-TiO2 nanocrystals against E. coli revealed significant activity when 10 µg was used, suggesting that it can be used as an antibacterial agent. Its effectiveness is likely related to its strong oxidation activity and superhydrophilicity. This study also discusses the mechanism of heterogeneous photocatalysis in the presence of TiO2.

Spin injection in n-type resonant tunneling diodes.

We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X-). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to -88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.

Circular polarization in a non-magnetic resonant tunneling device.

We have investigated the polarization-resolved photoluminescence (PL) in an asymmetric n-type GaAs/AlAs/GaAlAs resonant tunneling diode under magnetic field parallel to the tunnel current. The quantum well (QW) PL presents strong circular polarization (values up to -70% at 19 T). The optical emission from GaAs contact layers shows evidence of highly spin-polarized two-dimensional electron and hole gases which affects the spin polarization of carriers in the QW. However, the circular polarization degree in the QW also depends on various other parameters, including the g-factors of the different layers, the density of carriers along the structure, and the Zeeman and Rashba effects.

Spin effects in InAs self-assembled quantum dots.

We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD) of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs) in the center of a GaAs quantum well (QW). We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW.

Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE.

The growth of high mobility two-dimensional hole gases (2DHGs) using GaAs-GaAlAs heterostructures has been the subject of many investigations. However, despite many efforts hole mobilities in Be-doped structures grown on (100) GaAs substrate remained considerably lower than those obtained by growing on (311)A oriented surface using silicon as p-type dopant. In this study we will report on the properties of hole traps in a set of p-type Be-doped Al0.29Ga0.71As samples grown by molecular beam epitaxy on (100) and (311)A GaAs substrates using deep level transient spectroscopy (DLTS) technique. In addition, the effect of the level of Be-doping concentration on the hole deep traps is investigated. It was observed that with increasing the Be-doping concentration from 1 × 1016 to 1 × 1017 cm-3 the number of detected electrically active defects decreases for samples grown on (311)A substrate, whereas, it increases for (100) orientated samples. The DLTS measurements also reveal that the activation energies of traps detected in (311)A are lower than those in (100). From these findings it is expected that mobilities of 2DHGs in Be-doped GaAs-GaAlAs devices grown on (311)A should be higher than those on (100).