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1.
Electron-phonon coupling in a delta -doped n-i-p structure in GaAs.
Henning JC; de Groote FP; van der Vleuten WC; Wolter JH.
Phys Rev B Condens Matter ; 53(23): 15802-15809, 1996 Jun 15.
Article in English | MEDLINE | ID: mdl-9983416
2.
Optically detected magnetic resonance of Si donors in AlxGa1-xAs.
Montie EA; Henning JC; Cosman EC.
Phys Rev B Condens Matter ; 42(18): 11808-11817, 1990 Dec 15.
Article in English | MEDLINE | ID: mdl-9995489
3.
Photoionization threshold of the deep donor in Si-doped AlxGa1-xAs.
Henning JC; Ansems JP.
Phys Rev B Condens Matter ; 38(8): 5772-5775, 1988 Sep 15.
Article in English | MEDLINE | ID: mdl-9947034
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