ABSTRACT
In this paper, a measurement system is presented which enables fast and accurate determination of the relative angular emission intensity of light emitting devices, taking into account their specific features such as low light output, narrow spectral distribution, high spatial luminous intensity ratios, and small dimensions. Application of logarithmic sensors allows for fast measurement of relative emission by simple analog circuitry, while locating 18 of them on a fixed ring around the emitter allows a motionless measurement system. As a result, the proposed system can determine the relative angular emission in less than 100 ms with a resolution of 5° for symmetric emitters.
ABSTRACT
A comparative study of steady-state and time-resolved photoluminescence of para-sexiphenyl (PSP) films grown by organic molecular beam epitaxy (OMBE) and hot wall epitaxy (HWE) under comparable conditions is presented. Using different template substrates [mica(001) and KCl(001) surfaces] as well as different OMBE growth conditions has enabled us to vary greatly the morphology of the PSP crystallites while keeping their chemical structure virtually untouched. We prove that the broad redshifted emission band has a structure-related origin rather than being due to monomolecular oxidative defects. We conclude that the growth conditions and type of template substrate impacts substantially on the film morphology (measured by atomic force microscopy) and emission properties of the PSP films. The relative intensity of the defect emission band observed in the delayed spectra was found to correlate with the structural quality of PSP crystallites. In particular, the defect emission has been found to be drastically suppressed when (i) a KCl template substrate was used instead of mica in HWE-grown films, and (ii) in the OMBE-grown films dominated by growth mounds composed of upright standing molecules as opposed to the films consisting of crystallites formed by molecules lying parallel to the substrate.
