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1.
Nano Lett ; 9(12): 4073-7, 2009 Dec.
Article in English | MEDLINE | ID: mdl-19835353

ABSTRACT

While nanowires show increasing promise for optoelectronic applications, probing the subwavelength details of their optical modes has been a challenge with light-based techniques. Here we report the excitation of dielectric optical waveguide modes in a single GaN nanowire using transition radiation generated by a 1 nm diameter electron beam. This spatially resolved study opens important gateways to probing the optical modes of more complex nanostructures, fundamental for optimization of optoelectronic device performance.


Subject(s)
Models, Chemical , Nanostructures/chemistry , Nanostructures/radiation effects , Nanotechnology/methods , Computer Simulation , Electrons , Light , Nanostructures/ultrastructure , Particle Size
2.
Phys Rev Lett ; 101(7): 076802, 2008 Aug 15.
Article in English | MEDLINE | ID: mdl-18764564

ABSTRACT

The current-voltage characteristics of thin wires are often observed to be nonlinear, and this behavior has been ascribed to Schottky barriers at the contacts. We present electronic transport measurements on GaN nanorods and demonstrate that the nonlinear behavior originates instead from space-charge-limited current. A theory of space-charge-limited current in thin wires corroborates the experiments and shows that poor screening in high-aspect ratio materials leads to a dramatic enhancement of space-charge limited current, resulting in new scaling in terms of the aspect ratio.

3.
Nano Lett ; 6(8): 1808-11, 2006 Aug.
Article in English | MEDLINE | ID: mdl-16895377

ABSTRACT

This paper reports a scalable process for the growth of high-quality GaN nanowires and uniform nanowire arrays in which the position and diameter of each nanowire is precisely controlled. The approach is based on conventional metalorganic chemical vapor deposition using regular precursors and requires no additional metal catalyst. The location, orientation, and diameter of each GaN nanowire are controlled using a thin, selective growth mask that is patterned by interferometric lithography. It was found that use of a pulsed MOCVD process allowed the nanowire diameter to remain constant after the nanowires had emerged from the selective growth mask. Vertical GaN nanowire growth rates in excess of 2 mum/h were measured, while remarkably the diameter of each nanowire remained constant over the entire (micrometer) length of the nanowires. The paper reports transmission electron microscopy and photoluminescence data.


Subject(s)
Crystallization/methods , Gallium/chemistry , Nanotechnology/methods , Nanotubes/chemistry , Nanotubes/ultrastructure , Gallium/analysis , Gallium/radiation effects , Light , Luminescence , Materials Testing , Molecular Conformation , Nanotubes/analysis , Nanotubes/radiation effects , Particle Size , Semiconductors
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