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1.
Observation of double-gap-edge Andreev reflection at Si/Nb interfaces by point-contact spectroscopy.
Heslinga DR; Shafranjuk SE; van Kempen H; Klapwijk TM.
Phys Rev B Condens Matter ; 49(15): 10484-10494, 1994 Apr 15.
Article in English | MEDLINE | ID: mdl-10009873
2.
Enhancement of superconductivity far above the critical temperature in double-barrier tunnel junctions.
Heslinga DR; Klapwijk TM.
Phys Rev B Condens Matter ; 47(9): 5157-5164, 1993 Mar 01.
Article in English | MEDLINE | ID: mdl-10006681
3.
Carrier transport in mesoscopic silicon-coupled superconducting junctions.
van Huffelen WM; Klapwijk TM; Heslinga DR; de Boer MJ; van der Post N.
Phys Rev B Condens Matter ; 47(9): 5170-5189, 1993 Mar 01.
Article in English | MEDLINE | ID: mdl-10006683
4.
Structure and growth of epitaxial Pb on Si(111).
Weitering HH; Heslinga DR; Hibma T.
Phys Rev B Condens Matter ; 45(11): 5991-6002, 1992 Mar 15.
Article in English | MEDLINE | ID: mdl-10000341
5.
Medium-energy ion-scattering study of a possible relation between the Schottky-barrier height and the defect density at NiSi2/Si(111) interfaces.
Vrijmoeth J; van der Veen JF; Heslinga DR; Klapwijk TM.
Phys Rev B Condens Matter ; 42(15): 9598-9608, 1990 Nov 15.
Article in English | MEDLINE | ID: mdl-9995201
6.
Weitering et al. reply.
Weitering HH; Heslinga DR; Hibma T; Klapwijk TM.
Phys Rev Lett ; 65(6): 808, 1990 Aug 06.
Article in English | MEDLINE | ID: mdl-10043027
7.
Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfaces.
Heslinga DR; Weitering HH; van der Werf DP; Klapwijk TM; Hibma T.
Phys Rev Lett ; 64(13): 1589-1592, 1990 Mar 26.
Article in English | MEDLINE | ID: mdl-10041436
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