Epitaxial Cubic Silicon Carbide Photocathodes for Visible-Light-Driven Water Splitting.

Cubic silicon carbide (3C-SiC) material feature a suitable bandgap and high resistance to photocorrosion. Thus, it has been emerged as a promising semiconductor for hydrogen evolution. Here, the relationship between the photoelectrochemical properties and the microstructures of different SiC materials is demonstrated. For visible-light-derived water splitting to hydrogen production, nanocrystalline, microcrystalline and epitaxial (001) 3C-SiC films are applied as the photocathodes. The epitaxial 3C-SiC film presents the highest photoelectrochemical activity for hydrogen evolution, because of its perfect (001) orientation, high phase purity, low resistance, and negative conduction band energy level. This finding offers a strategy to design SiC-based photocathodes with superior photoelectrochemical performances.

3D 3C-SiC/Graphene Hybrid Nanolaminate Films for High-Performance Supercapacitors.

High-performance supercapacitors feature big and stable capacitances and high power and energy densities. To fabricate high-performance supercapacitors, 3D 3C-SiC/graphene hybrid nanolaminate films are grown via a microwave plasma-assisted chemical vapor deposition technique. Such films consist of 3D alternating structures of vertically aligned 3C-SiC and graphene layers, leading to high surface areas and excellent conductivity. They are further applied as the capacitor electrodes to construct electrical double layer capacitors (EDLCs) and pseudocapacitors (PCs) in both aqueous and organic solutions. The capacitance for an EDLC in aqueous solutions is up to 549.9 µF cm-2 , more than 100 times higher than that of an epitaxial 3C-SiC film. In organic solutions, it is 297.3 µF cm-2 . The pseudocapacitance in redox-active species (0.05 Fe(CN)6 3-/4- ) contained aqueous solutions is as high as 62.2 mF cm-2 . The capacitance remains at 98% of the initial value after 2500 charging/discharging cycles, indicating excellent cyclic stability. In redox-active species (0.01 m ferrocene) contained organic solutions, it is 16.6 mF cm-2 . Energy and power densities of a PC in aqueous solution are 11.6 W h kg-1 and 5.1 kW kg-1 , respectively. These vertically aligned 3C-SiC/graphene hybrid nanolaminate films are thus promising electrode materials for energy storage applications.

Photochemical Modification of Single Crystalline GaN Film Using n-Alkene with Different Carbon Chain Lengths as Biolinker.

As a potential material for biosensing applications, gallium nitride (GaN) films have attracted remarkable attention. In order to construct GaN biosensors, a corresponding immobilization of biolinkers is of great importance in order to render a surface bioactive. In this work, two kinds of n-alkenes with different carbon chain lengths, namely allylamine protected with trifluoroacetamide (TFAAA) and 10-aminodec-1-ene protected with trifluoroacetamide (TFAAD), were used to photochemically functionalize single crystalline GaN films. The successful linkage of both TFAAA and TFAAD to the GaN films is confirmed by time-of-flight secondary ion mass spectrometry (ToF-SIMS) measurement. With increased UV illumination time, the intensity of the secondary ions corresponding to the linker molecules initially increases and subsequently decreases in both cases. Based on the SIMS measurements, the maximum coverage of TFAAA is achieved after 14 h of UV illumination, while only 2 h is required in the case of TFAAD to reach the situation of a fully covered GaN surface. This finding leads to the conclusion that the reaction rate of TFAAD is significantly higher compared to TFAAA. Measurements by atomic force microscopy (AFM) indicate that the coverage of GaN films by a TFAAA layer leads to an increased surface roughness. The atomic terraces, which are clearly observable for the pristine GaN films, disappear once the surface is fully covered by a TFAAA layer. Such TFAAA layers will feature a homogeneous surface topography even for reaction times of 24 h. In contrast to this, TFAAD shows strong cross-polymerization on the surface, this is confirmed by optical microscopy. These results demonstrate that TFAAA is a more suitable candidate as biolinker in context of the GaN surfaces due to its improved controllability.

Graphene/3C-SiC Hybrid Nanolaminate.

In this work, we demonstrate a one-step approach to create graphene/3C-SiC nanolaminate structure using microwave plasma chemical vapor deposition technique. Layer-by-layer arrangement of thin 3C-SiC layers and graphene sheets is obtained with the thicknesses of the individual 3C-SiC layers and graphene sheets being 5-10 nm and 2-5 nm, respectively. An intimate contact between 3C-SiC and the graphene sheets is achieved and the nanolaminate film shows a high room temperature conductivity of 96.1 S/cm. A dedicated structural analysis of the nanolaminates by means of high-resolution transmission electron microscopy (HRTEM) reveals that the growth of the nanolaminates follows an iterative process: preferential graphene nucleation around the planar defects at the central region of the SiC layer, leading to the "splitting" of the SiC layer; and the thickening of the SiC layer after being "split". A growth mechanism based on both kinetics and thermodynamics is proposed. Following the proposed mechanism, it is possible to control the layer thickness of the graphene/3C-SiC hybrid nanolaminate by manipulating the carbon concentration in the gas phase, which is further experimentally verified. The high electrical conductivity, large surface area porous structure, feasible integration on different substrates (metal, Mo; semiconductor, Si and 2H-SiC; insulator, diamond) of the graphene/3C-SiC hybrid nanolaminate as well as other unprecedented advantages of the nanolaminate structure make it very promising for applications in mechanical, energy, and sensor-related areas.