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1.
Influence of electrode Fermi energy on interband tunneling.
Nogaret A; Maude DK; Portal JC; Maldonado MA; Martin KP; Carnahan RE; Higgins RJ; Lee H; Cho AY.
Phys Rev B Condens Matter ; 51(19): 13198-13202, 1995 May 15.
Article in English | MEDLINE | ID: mdl-9978119
2.
Quantum-well states of InAs/AlSb resonant-tunneling diodes.
Boykin TB; Carnahan RE; Higgins RJ.
Phys Rev B Condens Matter ; 48(19): 14232-14237, 1993 Nov 15.
Article in English | MEDLINE | ID: mdl-10007838
3.
Resonant and off-resonant phenomena in double-barrier interband tunneling structures.
Nogaret A; Maldonado MA; Carnahan RE; Martin KP; Higgins RJ; Aristone F; Maude DK; Portal JC; Chen JF; Cho AY.
Phys Rev B Condens Matter ; 47(20): 13872-13875, 1993 May 15.
Article in English | MEDLINE | ID: mdl-10005712
4.
Transverse magnetic field studies in Al1-yInyAs/Ga1-xInxAs quantum-well tunneling structures.
Ben Amor S; Rascol JJ; Martin KP; Higgins RJ; Potter RC; Hier H.
Phys Rev B Condens Matter ; 41(11): 7860-7863, 1990 Apr 15.
Article in English | MEDLINE | ID: mdl-9993087
5.
Magnetospectral analysis of tunneling processes in a double-quantum-well tunneling structure.
Rascol JJ; Martin KP; Amor SB; Higgins RJ; Celeste A; Portal JC; Torabi A; Harris HM; Summers CJ.
Phys Rev B Condens Matter ; 41(6): 3733-3737, 1990 Feb 15.
Article in English | MEDLINE | ID: mdl-9994175
6.
Erratum: Phonon-assisted tunneling in persistent-photocurrent decay
He LX; Martin KP; Higgins RJ.
Phys Rev B Condens Matter ; 40(14): 9977, 1989 Nov 15.
Article in English | MEDLINE | ID: mdl-9991530
7.
Phonon-assisted tunneling in persistent-photocurrent decay.
He LX; Martin KP; Higgins RJ.
Phys Rev B Condens Matter ; 39(18): 13276-13285, 1989 Jun 15.
Article in English | MEDLINE | ID: mdl-9948228
8.
Infrared quenching of persistent photoconductivity in GaAs/AlxGa1-xAs heterostructures.
He LX; Martin KP; Higgins RJ.
Phys Rev B Condens Matter ; 39(3): 1808-1818, 1989 Jan 15.
Article in English | MEDLINE | ID: mdl-9948397
9.
Persistent photocurrent decay mechanisms by capture of photoelectrons in GaAs-AlxGa1-xAs heterostructures.
He LX; Martin KP; Higgins RJ.
Phys Rev B Condens Matter ; 36(12): 6508-6519, 1987 Oct 15.
Article in English | MEDLINE | ID: mdl-9942361
10.
Mobility enhancement of modulation-doped materials by low-temperature optical annealing of spacer-layer defect charge state.
Higgins RJ; Martin KP; Syphers DA; Van Vechten JA; Palmateer SC.
Phys Rev B Condens Matter ; 36(5): 2707-2712, 1987 Aug 15.
Article in English | MEDLINE | ID: mdl-9943154
11.
Quantum and classical mobility determination of the dominant scattering mechanism in the two-dimensional electron gas of an AlGaAs/GaAs heterojunction.
Harrang JP; Higgins RJ; Goodall RK; Jay PR; Laviron M; Delescluse P.
Phys Rev B Condens Matter ; 32(12): 8126-8135, 1985 Dec 15.
Article in English | MEDLINE | ID: mdl-9936991
12.
de Haas-van Alphen scattering measurements on the reentrant superconductor La1-xCexAl2.
Epstein SI; Higgins RJ; Lowndes DH; Steglich F; Smith JF.
Phys Rev B Condens Matter ; 32(9): 5683-5692, 1985 Nov 01.
Article in English | MEDLINE | ID: mdl-9937814
13.
Capacitance measurements of a quantized two-dimensional electron gas in the regime of the quantum Hall effect.
Goodall RK; Higgins RJ; Harrang JP.
Phys Rev B Condens Matter ; 31(10): 6597-6608, 1985 May 15.
Article in English | MEDLINE | ID: mdl-9935541
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