ABSTRACT
Conductance spectra of doped silicon nanowire (SiNW) arrays were measured from 0.5 to 50 GHz at temperatures between 4 and 293 K. For arrays consisting of 11 to >10(4) SiNWs, the conductance was found to increase with frequency as f(s), with 0.25 < s < 0.45, consistent with behavior found universally in disordered systems. A possible cause is disorder from Si/SiO x interface states dominating the conductance due to the high surface-to-volume ratio of the nanowires.
Subject(s)
Microwaves , Models, Chemical , Nanotechnology/methods , Nanotubes/chemistry , Silicon/chemistry , Computer Simulation , Electric Conductivity , Materials Testing , Particle SizeABSTRACT
Planar electric split ring resonator (eSRR) metamaterials and their corresponding inverse structures are designed and characterized computationally and experimentally utilizing finite element modeling and THz time domain spectroscopy. A complementary response is observed in transmission. Specifically, for the eSRRs a decrease in transmission is observed at resonance whereas the inverse structures display an increase in transmission. The frequency dependent effective complex dielectric functions are extracted from the experimental data and, in combination with simulations to determine the surface current density and local electric field, provide considerable insight into the electromagnetic response of our planar metamaterials. These structures may find applications in the construction of various THz filters, transparent THz windows, or THz grid structures ideal for constructing THz switching/modulation devices.
