Spatially-Resolved Thermometry of Filamentary Nanoscale Hot Spots in TiO2 Resistive Random Access Memories to Address Device Variability.

Resistive random access memories (RRAM), based on the formation and rupture of conductive nanoscale filaments, have attracted increased attention for application in neuromorphic and in-memory computing. However, this technology is, in part, limited by its variability, which originates from the stochastic formation and extreme heating of its nanoscale filaments. In this study, we used scanning thermal microscopy (SThM) to assess the effect of filament-induced heat spreading on the surface of metal oxide RRAMs with different device designs. We evaluate the variability of TiO2 RRAM devices with area sizes of 2 × 2 and 5 × 5 µm2. Electrical characterization shows that the variability indicated by the standard deviation of the forming voltage is ∼2 times larger for 5 × 5 µm2 devices than for the 2 × 2 µm2 ones. Further knowledge on the reason for this variability is gained through the SThM thermal maps. These maps show that for 2 × 2 µm2 devices the formation of one filament, i.e., hot spot at the device surface, happens reliably at the same location, while the filament location varies for the 5 × 5 µm2 devices. The thermal information, combined with the electrical, interfacial, and geometric characteristics of the device, provides additional insights into the operation and variability of RRAMs. This work suggests thermal engineering and characterization routes to optimize the efficiency and reliability of these devices.

Nanoscale temperature sensing of electronic devices with calibrated scanning thermal microscopy.

Heat dissipation threatens the performance and lifetime of many electronic devices. As the size of devices shrinks to the nanoscale, we require spatially and thermally resolved thermometry to observe their fine thermal features. Scanning thermal microscopy (SThM) has proven to be a versatile measurement tool for characterizing the temperature at the surface of devices with nanoscale resolution. SThM can obtain qualitative thermal maps of a device using an operating principle based on a heat exchange process between a thermo-sensitive probe and the sample surface. However, the quantification of these thermal features is one of the most challenging parts of this technique. Developing reliable calibration approaches for SThM is therefore an essential aspect to accurately determine the temperature at the surface of a sample or device. In this work, we calibrate a thermo-resistive SThM probe using heater-thermometer metal lines with different widths (50 nm to 750 nm), which mimic variable probe-sample thermal exchange processes. The sensitivity of the SThM probe when scanning the metal lines is also evaluated under different probe and line temperatures. Our results reveal that the calibration factor depends on the probe measuring conditions and on the size of the surface heating features. This approach is validated by mapping the temperature profile of a phase change electronic device. Our analysis provides new insights on how to convert the thermo-resistive SThM probe signal to the scanned device temperature more accurately.

Resistive switching studies in VO2 thin films.

The hysteretic insulator-to-metal transition of VO2 is studied in detail for pulsed laser deposition grown thin films on TiO2 substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as the resistive transition in these films occurs close to room temperature. Multiple, stable resistance states can be set controllably in the temperature range of the hysteretic phase transition by tailored temperature sweeps or by Joule heating induced by current pulses.

Electron Trapping Mechanism in LaAlO_{3}/SrTiO_{3} Heterostructures.

In LaAlO_{3}/SrTiO_{3} heterostructures, a still poorly understood phenomenon is that of electron trapping in back-gating experiments. Here, by combining magnetotransport measurements and self-consistent Schrödinger-Poisson calculations, we obtain an empirical relation between the amount of trapped electrons and the gate voltage. The amount of trapped electrons decays exponentially away from the interface. However, contrary to earlier observations, we find that the Fermi level remains well within the quantum well. The enhanced trapping of electrons induced by the gate voltage can therefore not be explained by a thermal escape mechanism. Further gate sweeping experiments strengthen that conclusion. We propose a new mechanism which involves the electromigration and clustering of oxygen vacancies in SrTiO_{3} and argue that such electron trapping is a universal phenomenon in SrTiO_{3}-based two-dimensional electron systems.

ON the Nature of Ionic Liquid Gating of La2-xSrxCuO4.

Ionic liquids have recently been used as means of modulating the charge carrier properties of cuprates. The mechanism behind it, however, is still a matter of debate. In this paper we report experiments on ionic liquid gated ultrathin La2-xSrxCuO4 films. Our results show that the electrostatic part of gating has limited influence in the conductance of the cuprate in the gate voltage range of 0 to - 2 V. A non-electrostatic mechanism takes over for gate voltages below - 2 V. This mechanism most likely changes the oxygen concentration of the film. The results presented are in line with previous X-ray based studies on ionic liquid gating induced oxygenation of the cuprate materials YBa2Cu3O7-x and La2-xSrxCuO4.

Critical behavior at a dynamic vortex insulator-to-metal transition.

An array of superconducting islands placed on a normal metal film offers a tunable realization of nanopatterned superconductivity. This system enables investigation of the nature of competing vortex states and phase transitions between them. A square array creates the eggcrate potential in which magnetic field-induced vortices are frozen into a vortex insulator. We observed a vortex insulator-vortex metal transition driven by the applied electric current and determined critical exponents that coincided with those for thermodynamic liquid-gas transition. Our findings offer a comprehensive description of dynamic critical behavior and establish a deep connection between equilibrium and nonequilibrium phase transitions.

Analysis of low-field isotropic vortex glass containing vortex groups in YBa2Cu3O(7-x) thin films visualized by scanning SQUID microscopy.

The glass-like vortex distribution in pulsed laser deposited YBa2Cu3O(7-x) thin films is observed by scanning superconducting quantum interference device microscopy and analysed for ordering after cooling in magnetic fields significantly smaller than the Earth's field. Autocorrelation calculations on this distribution show a weak short-range positional order, while Delaunay triangulation shows a near-complete lack of orientational order. The distribution of these vortices is finally characterised as an isotropic vortex glass. Abnormally closely spaced groups of vortices, which are statistically unlikely to occur, are observed above a threshold magnetic field. The origin of these groups is discussed, but will require further investigation.

Imaging of order parameter induced pi phase shifts in cuprate superconductors by low-temperature scanning electron microscopy.

Low-temperature scanning electron microscopy (LTSEM) has been used to image the supercurrent distribution in ramp-type Josephson junctions between Nb and either the electron-doped cuprate Nd_{2-x}Ce_{x}CuO_{4-y} or the hole-doped cuprate YBa_{2}Cu_{3}O_{7}. For zigzag-shaped devices in the short junction limit the critical current is strongly suppressed at zero applied magnetic field. The LTSEM images show that this is due to the Josephson current counterflow in neighboring 0 and pi facets, which is induced by the d_{x;{2}-y;{2}} order parameter in the cuprates. Thus, LTSEM provides imaging of the sign change of the superconducting order parameter, which can also be applied to other types of Josephson junctions.

Electrically excited, localized infrared emission from single carbon nanotubes.

Carbon nanotube field-effect transistors (CNTFETs) produce band gap derived infrared emission under both ambipolar and unipolar transport conditions. We demonstrate here that heterogeneities/defects in the local environment of a CNTFET perturb the local potentials and, as a result, the characteristic bias dependent motion of the ambipolar light emission. Such defects can also introduce localized infrared emission due to impact excitation by carriers accelerated by a voltage drop at the defect. The correlation of the change in the motion of the ambipolarlight emission and of the stationary electroluminescence with the electrical characteristics of the CNTFETs shows that stationaryelectroluminescence can identify "environmental defects" in carbon nanotubes and help evaluate their influence on electrical transport and device operation. A number of different defects are studied involving local dielectric environment changes (partially polymer-covered nanotubes), nanotube-nanotube contacts in looped nanotubes, and nanotube segments close to the electronic contacts. Random defects due to local charging are also observed.

Electronically coupled complementary interfaces between perovskite band insulators.

Perovskite oxides exhibit a plethora of exceptional properties, providing the basis for novel concepts of oxide-electronic devices. The interest in these materials is even extended by the remarkable characteristics of their interfaces. Studies on single epitaxial connections between the wide-bandgap insulators LaAlO3 and SrTiO3 have revealed them to be either high-mobility electron conductors or insulating, depending on the atomic stacking sequences. For device applications, as well as for a basic understanding of the interface conduction mechanism, it is important to investigate the electronic coupling of closely spaced complementary interfaces. Here we report the successful realization of such coupled interfaces in SrTiO3-LaAlO3 thin-film multilayer structures. We found a critical separation distance of six perovskite unit cell layers, corresponding to approximately 23 A, below which a decrease of the interface conductivity and carrier density occurs. Interestingly, the high carrier mobilities characterizing the separate conducting interfaces are found to be maintained in coupled structures down to subnanometre interface spacing.

Ordering and manipulation of the magnetic moments in large-scale superconducting pi-loop arrays.

The phase of the macroscopic electron-pair wavefunction in a superconductor can vary only by multiples of 2pi when going around a closed contour. This results in quantization of magnetic flux, one of the most striking demonstrations of quantum phase coherence in superconductors. By using superconductors with unconventional pairing symmetry, or by incorporating pi-Josephson junctions, a phase shift of pi can be introduced in such loops. Under appropriate conditions, this phase shift results in doubly degenerate time-reversed ground states, which are characterized by the spontaneous generation of half quanta of magnetic flux, with magnitude 1/2 Phi(0)(Phi(0) = h/2e = 2.07 x 10(-15) Wb) (ref. 7). Until now, it has only been possible to generate individual half flux quanta. Here we report the realization of large-scale coupled pi-loop arrays based on YBa2Cu3O7-Au-Nb Josephson contacts. Scanning SQUID (superconducting quantum interference device) microscopy has been used to study the ordering of half flux quanta in these structures. The possibility of manipulating the polarities of individual half flux quanta is also demonstrated. These pi-loop arrays are of interest as model systems for studying magnetic phenomena--including frustration effects--in Ising antiferromagnets. Furthermore, studies of coupled pi-loops can be useful for designing quantum computers based on flux-qubits with viable quantum error correction capabilities.