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1.
Clustering and reaction for Cr/GaAs(110): Scanning tunneling microscopy and photoemission studies.
Trafas BM; Hill DM; Benning PJ; Waddill GD; Yang Y; Siefert RL; Weaver JH.
Phys Rev B Condens Matter ; 43(9): 7174-7184, 1991 Mar 15.
Article in English | MEDLINE | ID: mdl-9998180
2.
Adsorption and interaction of Sm on GaAs(110) studied by scanning tunneling microscopy.
Trafas BM; Hill DM; Siefert RL; Weaver JH.
Phys Rev B Condens Matter ; 42(5): 3231-3234, 1990 Aug 15.
Article in English | MEDLINE | ID: mdl-9995835
3.
Photoemission and inverse-photoemission studies of Ba1-xKxBiO3-y.
Wagener TJ; Meyer HM; Hill DM; Hu Y; Jost MB; Weaver JH; Hinks DG; Dabrowski B; Richards DR.
Phys Rev B Condens Matter ; 40(7): 4532-4537, 1989 Sep 01.
Article in English | MEDLINE | ID: mdl-9992445
4.
Cu adatom interactions with single- and polycrystalline Bi2Ca1+xSr2-xCu2O8+y and YBa2Cu3O7-x.
Hill DM; Meyer HM; Weaver JH; Gallo CF; Goretta KC.
Phys Rev B Condens Matter ; 38(16): 11331-11336, 1988 Dec 01.
Article in English | MEDLINE | ID: mdl-9946012
5.
Electronic structures of the YBa2Cu3O7-x surface and its modification by sputtering and adatoms of Ti and Cu.
Meyer HM; Hill DM; Wagener TJ; Gao Y; Weaver JH; Capone DW; Goretta KC.
Phys Rev B Condens Matter ; 38(10): 6500-6512, 1988 Oct 01.
Article in English | MEDLINE | ID: mdl-9945323
6.
Occupied electronic states of single-crystal Bi2Ca1+xSr2+xCu2O8+y.
Meyer HM; Hill DM; Weaver JH; Nelson DL; Gallo CF.
Phys Rev B Condens Matter ; 38(10): 7144-7147, 1988 Oct 01.
Article in English | MEDLINE | ID: mdl-9945424
7.
Valence bands, oxygen in planes and chains, and surface changes for single crystals of M2CuO4 and MBa2Cu3Ox (M=Pr,Nd,Eu,Gd).
Weaver JH; Meyer HM; Wagener TJ; Hill DM; Gao Y; Peterson D; Fisk Z; Arko AJ.
Phys Rev B Condens Matter ; 38(7): 4668-4676, 1988 Sep 01.
Article in English | MEDLINE | ID: mdl-9946855
8.
Atomic distributions across metal-III-V-compound-semiconductor interfaces.
Hill DM; Xu F; Lin Z; Weaver JH.
Phys Rev B Condens Matter ; 38(3): 1893-1900, 1988 Jul 15.
Article in English | MEDLINE | ID: mdl-9946475
9.
Temperature-dependent reaction and atomic redistribution for Ti/GaAs(100) interfaces.
Xu F; Hill DM; Lin Z; Anderson SG; Shapira Y; Weaver JH.
Phys Rev B Condens Matter ; 37(17): 10295-10300, 1988 Jun 15.
Article in English | MEDLINE | ID: mdl-9944464
10.
Cu-induced surface disruption of La1.85Sr0.15CuO4.
Hill DM; Gao Y; Meyer HM; Wagener TJ; Weaver JH; Capone DW.
Phys Rev B Condens Matter ; 37(1): 511-514, 1988 Jan 01.
Article in English | MEDLINE | ID: mdl-9943604
11.
Au/InSb(110) interface profiles from synchrotron-radiation and polar-angle-dependent x-ray photoemission.
Shapira Y; Boscherini F; Capasso C; Xu F; Hill DM; Weaver aJ.
Phys Rev B Condens Matter ; 36(14): 7656-7659, 1987 Nov 15.
Article in English | MEDLINE | ID: mdl-9942545
12.
Temperature-dependent interface evolution for Ti/GaAs(100) and Cr/GaAs(100).
Xu F; Lin Z; Hill DM; Weaver JH.
Phys Rev B Condens Matter ; 36(12): 6624-6630, 1987 Oct 15.
Article in English | MEDLINE | ID: mdl-9942377
13.
Oxygen withdrawal, copper valency, and interface reaction for Fe/La1.85Sr0.15CuO4.
Hill DM; Meyer HM; Weaver JH; Flandermeyer B; Capone DW.
Phys Rev B Condens Matter ; 36(7): 3979-3982, 1987 Sep 01.
Article in English | MEDLINE | ID: mdl-9943357
14.
Temperature-dependent reaction and buried-interface movement for Ti/GaAs(100) and Cr/GaAs(100).
Xu F; Lin Z; Hill DM; Weaver JH.
Phys Rev B Condens Matter ; 35(17): 9353-9356, 1987 Jun 15.
Article in English | MEDLINE | ID: mdl-9941352
15.
Atom profiles of interfaces with polar-angle-dependent photoemission: Au/GaAs(100).
Xu F; Shapira Y; Hill DM; Weaver JH.
Phys Rev B Condens Matter ; 35(14): 7417-7422, 1987 May 15.
Article in English | MEDLINE | ID: mdl-9941044
16.
Epitaxy, overlayer growth, and surface segregation for Co/GaAs(110) and Co/GaAs(100)-c(82).
Xu F; Joyce JJ; Ruckman MW; Chen H; Boscherini F; Hill DM; Chambers SA; Weaver JH.
Phys Rev B Condens Matter ; 35(5): 2375-2384, 1987 Feb 15.
Article in English | MEDLINE | ID: mdl-9941686
17.
Silicide formation at the Ti/Si(111) interface: Diffusion parameters and behavior at elevated temperatures.
Chambers SA; Hill DM; Xu F; Weaver JH.
Phys Rev B Condens Matter ; 35(2): 634-640, 1987 Jan 15.
Article in English | MEDLINE | ID: mdl-9941446
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