Minority Currents in n-Doped Organic Transistors.

Doping allows us to control the majority and minority charge carrier concentration in organic field-effect transistors. However, the precise mechanism of minority charge carrier generation and transport in organic semiconductors is largely unknown. Here, the injection of minority charge carriers into n-doped organic field-effect transistors is studied. It is shown that holes can be efficiently injected into the transistor channel via Zener tunneling inside the intrinsic pentacene layer underneath the drain electrode. Moreover, it is shown that the onset of minority (hole) conduction is shifted by lightly n-doping the channel region of the transistor. This behavior can be explained by a large voltage that has to be applied to the gate in order to fully deplete the n-doped layer as well as an increase in hole trapping by inactive dopants.

Breakdown and Protection of ALD Moisture Barrier Thin Films.

The water vapor barrier properties of low-temperature atomic layer deposited (ALD) AlOx thin-films are observed to be unstable if exposed directly to high or even ambient relative humidities. Upon exposure to humid atmospheres, their apparent barrier breaks down and their water vapor transmission rates (WVTR), measured by electrical calcium tests, deteriorate by several orders of magnitude. These changes are accompanied by surface roughening beyond the original thickness, observed by atomic force microscopy. X-ray reflectivity investigations show a strong decrease in density caused by only 5 min storage in a 38 °C, 90% relative humidity climate. We show that barrier stabilities required for device applications can be achieved by protection layers which prevent the direct contact of water condensing on the surface, i.e., the sensitive ALD barrier. Nine different protection layers of either ALD materials or polymers are tested on the barriers. Although ALD materials prove to be ineffective, applied polymers seem to provide good protection independent of thickness, surface free energy, and deposition technique. A glued-on PET foil stands out as a low-cost, easily processed, and especially stable solution. This way, 20 nm single layer ALD barriers for organic electronics are measured. They yield reliable WVTRs down to 2×10(-5) g(H2O) m(-2) day(-1) at 38 °C and 90% relative humidity, highlighting the great potential of ALD encapsulation.

Doped organic transistors operating in the inversion and depletion regime.

The inversion field-effect transistor is the basic device of modern microelectronics and is nowadays used more than a billion times on every state-of-the-art computer chip. In the future, this rigid technology will be complemented by flexible electronics produced at extremely low cost. Organic field-effect transistors have the potential to be the basic device for flexible electronics, but still need much improvement. In particular, despite more than 20 years of research, organic inversion mode transistors have not been reported so far. Here we discuss the first realization of organic inversion transistors and the optimization of organic depletion transistors by our organic doping technology. We show that the transistor parameters--in particular, the threshold voltage and the ON/OFF ratio--can be controlled by the doping concentration and the thickness of the transistor channel. Injection of minority carriers into the doped transistor channel is achieved by doped contacts, which allows forming an inversion layer.