Controlling stable Bloch points with electric currents.

The Bloch point is a point singularity in the magnetisation configuration, where the magnetisation vanishes. It can exist as an equilibrium configuration and plays an important role in many magnetisation reversal processes. In the present work, we focus on manipulating Bloch points in a system that can host stable Bloch points-a two-layer FeGe nanostrip with opposite chirality of the two layers. We drive Bloch points using spin-transfer torques and find that Bloch points can move collectively without any Hall effect and report that Bloch points are repelled from the sample boundaries and each other. We study pinning of Bloch points at wedge-shaped constrictions (notches) in the nanostrip and demonstrate that arrays of Bloch points can be moved past a series of notches in a controlled manner by applying consecutive current pulses of different strength. Finally, we simulate a T-shaped geometry and demonstrate that a Bloch point can be moved along different paths by applying current between suitable strip ends.

Publisher Correction: Establishing magneto-structural relationships in the solid solutions of the skyrmion hosting family of materials: GaV4S8-ySey.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Establishing magneto-structural relationships in the solid solutions of the skyrmion hosting family of materials: GaV4S8-ySey.

The GaV4S8-ySey (y = 0 to 8) family of materials have been synthesized in both polycrystalline and single crystal form, and their structural and magnetic properties thoroughly investigated. Each of these materials crystallizes in the F[Formula: see text][Formula: see text]3m space group at ambient temperature. However, in contrast to the end members GaV4S8 and GaV4Se8, that undergo a structural transition to the R3m space group at 42 and 41 K respectively, the solid solutions (y = 1 to 7) retain cubic symmetry down to 1.5 K. In zero applied field the end members of the family order ferromagnetically at 13 K (GaV4S8) and 18 K (GaV4Se8), while the intermediate compounds exhibit a spin-glass-like ground state. We demonstrate that the magnetic structure of GaV4S8 shows localization of spins on the V cations, indicating that a charge ordering mechanism drives the structural phase transition. We conclude that the observation of both structural and ferromagnetic transitions in the end members of the series in zero field is a prerequisite for the stabilization of a skyrmion phase, and discuss how the absence of these transitions in the y = 1 to 7 materials can be explained by their structural properties.