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1.
RSC Adv ; 8(47): 26857-26870, 2018 Jul 24.
Article in English | MEDLINE | ID: mdl-35541064

ABSTRACT

Ce3+-doped Y3Al5O12 (YAG:Ce) nanocrystals were synthesized by a unique solvothermal method, under sub-critical conditions. A home-made autoclave was used, operating in a larger pressure and temperature range than that with conventional commercial equipment and allowing direct in situ photoluminescence (PL) and X-ray absorption characterizations. The study of various synthesis conditions (pressure, temperature, precursor concentration, reaction time) allowed the best reaction conditions to be pinpointed to control YAG:Ce nanocrystal size, as well as crystal quality, and to get efficient optical properties. Without any post thermal treatment, we succeeded in obtaining well-crystallized YAG:Ce nanocrystals (30-200 nm), displaying typical PL properties of YAG:Ce with a maximal emission at 550 nm. The pristine 100 nm-sized YAG:Ce nanoparticles present an internal quantum yield of about 40 ± 5%. In situ X-ray absorption near edge spectroscopy demonstrates the presence of Ce4+ in nanocrystals elaborated at high temperature, resulting from the oxidation of Ce3+ during the crystallization process.

2.
Opt Express ; 17(13): 10887-94, 2009 Jun 22.
Article in English | MEDLINE | ID: mdl-19550489

ABSTRACT

Midinfrared absorption can be locally measured using a detection combining an atomic force microscope and a pulsed excitation. This is illustrated for the midinfrared bulk GaAs phonon absorption and for the midinfrared absorption of thin SiO(2) microdisks. We show that the signal given by the cantilever oscillation amplitude of the atomic force microscope follows the spectral dependence of the bulk material absorption. The absorption spatial resolution achieved with microdisks is around 50 nanometer for an optical excitation around 22 micrometer wavelength.


Subject(s)
Microscopy, Atomic Force/instrumentation , Microscopy, Atomic Force/methods , Spectrophotometry, Infrared/methods , Absorption , Acoustics , Equipment Design , Oscillometry/methods , Semiconductors , Silicon Dioxide/chemistry , Surface Properties
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