Effect of AlOx protection layer on AgNWs for flexible transparent heater.

We indicated high performance and stability transparent heaters based on AlOx covered Ag nanowires. We obtained an AlOx covered Ag nanowire thin film which has a 47 ohm/sq of sheet resistance and 88.1% (substrate included) of transmittance at 600 nm on a flexible substrate. We demonstrate that the thin AlOx layer leads to increased contact area at the junction of Ag nanowires, which contributes to lower sheet resistance and improved adhesion of Ag nanowires. Furthermore, high stability and flexibility of Ag nanowire have been achieved by the AlOx layer. Finally, we fabricated a flexible transparent heater with AlOx covered Ag nanowire, and obtained a temperature of 81 °C within 40 sec at the driven voltage of 7 V with fast response and uniform temperature distribution. Therefore, the AlOx covered Ag nanowire film is a promising candidate for the application of the flexible transparent heaters.

Effect of Inductively Coupled Plasma on Multilayer Electrodes for Flexible Single-Layer Touch Screen Panels.

We investigated the effect of inductively coupled plasma (ICP) on multilayer electrodes for flexible capacitive touch sensors. We found that using ICP during Ag deposition generally increased the conductivity and transmittance of multilayer electrodes. As a result, in the case of the multilayer electrode with an ICP power of 150 W during Ag deposition, 5.7 Ω/sq of sheet resistance and 89.6% of transmittance (550 nm) have been achieved. We demonstrate that the crystallization of the ICP supplied Ag layer in multilayer electrodes leads to the smooth surface roughness of the multilayer film; the smooth surface roughness provided low light scattering. As a result, the crystallized Ag thin film by ICP improved the sheet resistance and transmittance of multilayer electrodes. Finally, we fabricated a 221 × 130 mm (active layer)-sized single-layer touch screen panel (TSP) using multilayer electrodes with ICP on a corning glass and polyethylene terephthalate flexible substrate. The single-layer TSPs show high linearity and sensitivity with multitouches.

Opposite Behavior of Multilayer Graphene/ Indium-Tin-Oxide p-Electrode for Gallium Nitride Based-Light Emitting Diodes Depending on Thickness of Indium-Tin-Oxide Layer.

In order to improve EQE, we have investigated on the role of multilayer graphene (MLG) on the electrical and optical properties of GaN based light-emitting diodes (LEDs) with ultrathin ITO (5 nm or 10 nm)/p-GaN contacts. The MLG was transferred on the ITO/p-GaN to decrease sheet resistance of thin ITO p-electrode and improve the current spreading of LEDs. The LEDs with the ITO 5 nm and MLG/ITO 5 nm structures showed 3.25 and 3.06 V at 20 mA, and 11.69 and 13.02 mW/sr at 400 mA, respectively. After forming MLG on ITO 5 nm, the electro-optical properties were enhanced. Furthermore, the GaN based-LEDs applied to the ITO 10 nm, and MLG/ITO (10 nm) structures showed 2.95 and 3.06 V at 20 mA, and 20.28 and 16.74 mW/sr at 400 mA, respectively. The sheet resistance of the MLG transferred to ITO 5 nm was decreased approximately four fold compared to ITO 5 nm. On the other hand, the ITO 10 nm and MLG/ITO 10 nm showed a similar sheet resistance; the transmittance of the LEDs with ITO 10 nm decreased to 16% due to MLG formation on ITO. This suggests that the relationship between the sheet resistance and transmittance according to the ITO film thickness affected the electro-optical properties of the LEDs with a transparent p-electrode with the MLG/ITO dual structure.

Electron beam irradiated silver nanowires for a highly transparent heater.

Transparent heaters have attracted increasing attention for their usefulness in vehicle windows, outdoor displays, and periscopes. We present high performance transparent heaters based on Ag nanowires with electron beam irradiation. We obtained an Ag-nanowire thin film with 48 ohm/sq of sheet resistance and 88.8% (substrate included) transmittance at 550 nm after electron beam irradiation for 120 sec. We demonstrate that the electron beam creates nano-soldering at the junctions of the Ag nanowires, which produces lower sheet resistance and improved adhesion of the Ag nanowires. We fabricated a transparent heater with Ag nanowires after electron beam irradiation, and obtained a temperature of 51 °C within 1 min at an applied voltage of 7 V. The presented technique will be useful in a wide range of applications for transparent heaters.

Effect of Inductively Coupled Plasma on the Structural and Electrical Properties of Ti-Doped ITO Films Formed by IPVD.

In this study, we investigated Ti-doped ITO films formed through ionized physical vapor deposition (IPVD) using inductively coupled plasma (ICP). Ti-doped ITO thin films showed an enhanced mobility with ICP power; owing to the improved crystallinity, and the sheet resistance of the Ti-doped ITO (30 nm) largely decreased from 295.1 to 134.5 ohm/sq, even during at room temperature. Therefore, IPVD technology offers a useful tool for transparent electrodes with a large area window-unified touch-screen panel.

Index-matched indium tin oxide electrodes for capacitive touch screen panel applications.

Index-matched indium tin oxide (ITO) electrodes for capacitive touch screen panels have been fabricated to improve optical transmittance and reduce the difference of reflectance (deltaR) between the etched and un-etched regions. 8.5 nm Nb2O5 and 49 nm SiO2 thin films were deposited by magnetron sputtering as index-matching layers between an ITO electrode and a glass substrate. In case of 30 nm ITO electrode, a 4.3% improvement in the optical transmittance and a deltaR of less than 1% were achieved, along with a low sheet resistance of 90 omega/square.

Thin film transistor based on TiOx prepared by DC magnetron sputtering.

This paper reports on the thin film transistor (TFT) based on TiOx prepared by direct current (DC) magnetron sputtering for the application of n-type channel transparent TFTs. A ceramic TiOx target was prepared for the sputtering of the TiO2 films. The structural, optical, and electrical properties of the TiO2 films were investigated after their heat treatment. It is observed from XRD measurement that the TiO2 films show anatase structure having (101), (004), and (105) planes after heat treatment. The anatase-structure TiO2 films show a band-gap energy of approximately 3.20 eV and a transmittance of approximately 91% (@550 nm). The bottom-gate TFTs fabricated with the TiO2 film as an n-type channel layer. These devices exhibit the on-off ratio, the field-effect mobility, and the threshold voltage of about 10(4), 0.002 cm2/Vs, and 6 V, respectively. These results indicate the possibility of applying TiO2 films depositied by DC magnetron sputtering to TiO2-based opto-electronic devices.