Growth-Promoting Mechanism of Bismuth-Doped Cu(In,Ga)Se2 Solar Cells Fabricated at 400 °C.

The classical high-temperature synthesis process of Cu(In,Ga)Se2 (CIGS) solar cells limits their applications on high-temperature intolerant substrates. In this study, a novel low-temperature (400 °C) fabrication strategy of CIGS solar cells is reported using the bismuth (Bi)-doping method, and its growth-promoting mechanism is systematically studied. Different concentrations of Bi are incorporated into pure chalcopyrite quaternary target sputtered-CIGS films by controlling the thickness of the Bi layer. Bi induces considerable grain growth improvement, and an average of approximately 3% absolute efficiency enhancement is achieved for Bi-doped solar cells in comparison with the Bi-free samples. Solar cells doped with a 50 nm Bi layer yield the highest efficiency of 13.04% (without any antireflective coating) using the low-temperature technology. The copper-bismuth-selenium compounds (Cu-Bi-Se, mainly Cu1.6Bi4.8Se8) are crucial in improving the crystallinity of absorbers during the annealing process. These Bi-containing compounds are conclusively observed at the grain boundaries and top and bottom interfaces of CIGS films. The growth promotion is found to be associated with the superior diffusion capacity of Cu-Bi-Se compounds in CIGS films, and these liquid compounds function as carriers to facilitate crystallization. Bi atoms do not enter the CIGS lattices, and the band gaps (Eg) of absorbers remain unchanged. Bi doping reduces the number of CIGS grain boundaries and increases the copper vacancy content in CIGS films, thereby boosting the carrier concentrations. Cu-Bi-Se compounds in grain boundaries significantly enhance the conductivity of grain boundaries and serve as channels for carrier transport. The valence band, Fermi energy level (EF), and conduction band of Bi-doped CIGS films all move downward. This band shift strengthens the band bending of the CdS/CIGS heterojunction and eventually improves the open circuit voltage (Voc) of solar cells. An effective doping method and a novel mechanism can facilitate the low-temperature preparation of CIGS solar cells.

Quantifying Efficiency Limitations in All-Inorganic Halide Perovskite Solar Cells.

While halide perovskites have excellent optoelectronic properties, their poor stability is a major obstacle toward commercialization. There is a strong interest to move away from organic A-site cations such as methylammonium and formamidinium toward Cs with the aim of improving thermal stability of the perovskite layers. While the optoelectronic properties and the device performance of Cs-based all-inorganic lead-halide perovskites are very good, they are still trailing behind those of perovskites that use organic cations. Here, the state-of-the-art of all-inorganic perovskites for photovoltaic applications is reviewed by performing detailed meta-analyses of key performance parameters on the cell and material level. Key material properties such as carrier mobilities, external photoluminescence quantum efficiency, and photoluminescence lifetime are discussed and what is known about defect tolerance in all-inorganic is compared relative to hybrid (organic-inorganic) perovskites. Subsequently, a unified approach is adopted for analyzing performance losses in perovskite solar cells based on breaking down the losses into several figures of merit representing recombination losses, resistive losses, and optical losses. Based on this detailed loss analysis, guidelines are eventually developed for future performance improvement of all-inorganic perovskite solar cells.

Significantly Enhancing Response Speed of Self-Powered Cu2ZnSn(S,Se)4 Thin Film Photodetectors by Atomic Layer Deposition of Simultaneous Electron Blocking and Electrode Protective Al2O3 Layers.

Kesterite Cu2ZnSn(S,Se)4 (CZTSSe) thin film is a promising material for optoelectronic devices. In this work, we fabricate Mo/CZTSSe/CdS/ZnO/ITO (ITO, indium tin oxide) heterojunction photodetectors with favorable self-powered characteristics. The photodetector exhibits exceptional high-frequency photoresponse performance whose -3 dB bandwidth and rise/decay time have reached 1 MHz and 240/340 ns, respectively. For further improvement, ultrathin Al2O3 layer prepared via atomic layer deposition (ALD) process is introduced at the Mo/CZTSSe interface. The influence of ALD-Al2O3 layer thickness and its role on the photoresponse performance are investigated in detail. The interfacial layer proved to serve as a protective layer preventing selenization of Mo electrode, resulting in the reduction of MoSe2 transition layer and the decrease of series resistance of the device. Accordingly, the -3 dB bandwidth is remarkably extended to 3.5 MHz while the rise/decay time is dramatically improved to 60/77 ns with 16 cycles of ALD-Al2O3 layer, which is 4-5 orders of magnitude faster than the other reported CZTSSe photodetectors. Simultaneously, it is revealed that the ALD-Al2O3 interfacial layer acts as an electron blocking layer which leads to the effective suppression of carrier recombination at the rear surface. Consequently, the responsivity and detectivity are enhanced in the entire range while the maximum values are up to 0.39 AW-1 and 2.04 × 1011 Jones with 8 cycles of ALD-Al2O3, respectively. Finally, the CZTSSe photodetector is successfully integrated into a visible light communication system and obtains a satisfying transfer rate of 2 Mbps. These results indicate the satisfying performance of CZTSSe-based thin film photodetectors with great potential applications for communication.

In Situ-Doped Silicon Thin Films for Passivating Contacts by Hot-Wire Chemical Vapor Deposition with a High Deposition Rate of 42 nm/min.

Hot-wire chemical vapor deposition was used to deposit in situ-doped amorphous silicon layers for poly-Si/SiOx passivating contacts at a high deposition rate of 42 nm/min. We investigated the influence of a varied phosphine gas (PH3) concentration during deposition on (i) the silicon film properties and (ii) the passivating contact performances. The microstructural film properties were characterized before and after a high-temperature crystallization step to transform amorphous silicon films into polycrystalline silicon films. Before crystallization, the silicon layers become less dense as the PH3 concentrations increase. After crystallization, an increasing domain size is derived for higher PH3 concentrations. Sheet resistance is found to decrease as domain size increased, and the correlation between mobility and domain size was discussed. The performances of the passivating contact were measured, and a firing stable open circuit voltage of 732 mV, a contact resistivity of 8.1 mΩ·cm2, and a sheet resistance of 142 Ω/□ could be achieved with the optimized PH3 concentration. In addition, phosphorous doping tails into the crystalline silicon were extracted to evaluate the Auger recombination of the passivating contact.

Significantly Enhanced Detectivity of CIGS Broadband High-Speed Photodetectors by Grain Size Control and ALD-Al2O3 Interfacial-Layer Modification.

The Cu(In,Ga)Se2 (CIGS) thin film has been commercialized as solar cells with great success, but its application for photodetectors still faces some practical challenges, including low detectivity and long response time. In this paper, the structure of the Mo/CIGS/CdS/ZnO/ITO heterojunction has been fabricated, and satisfactory performances of high detectivity and fast response time have been achieved by suppressing the dark current and enhancing the carrier mobility. The controllable growth of CIGS grains is accomplished through optimizing the selenization process, demonstrating that bigger grain sizes resulted in higher carrier mobility and better response characteristics. Particularly, the high rise/decay speed of 3.40/6.46 µs is achieved. Furthermore, the interface of the CIGS/CdS heterojunction has been modified by the Al2O3 layer via the atomic-layer deposition (ALD) process. The dark current of the device is effectively suppressed by the ALD-Al2O3 layer, which remarkably drops from ∼10-7 to ∼10-9 A. As a consequence, the detectivity rises from 3.08 × 1011 to 1.84 × 1012 Jones. In addition, the ALD-Al2O3 layer shows a protective effect as well, which is positive for photoelectrical conversion. Besides, the wide linear dynamic range of 102.1 dB and large -3 dB bandwidth of 78 kHz are acquired. This work suggests that the CIGS-based heterojunction has great potential for high-performance thin-film photodetectors.

Improvement of Cu2 ZnSn(S,Se)4 Solar Cells by Adding N,N-Dimethylformamide to the Dimethyl Sulfoxide-Based Precursor Ink.

Cu2 ZnSn(S,Se)4 (CZTSSe) solar cells based on dimethyl sulfoxide (DMSO) Cu-Zn-Sn-S precursor ink have seen tremendous progress in recent years. However, the wettability between the ink and Mo substrate is poor, owing to the high viscosity of the highly concentrated Cu-Zn-Sn-S ink. Herein, a solvent engineering process is proposed in which N,N-dimethylformamide (DMF) is added into the DMSO-based Cu-Zn-Sn-S ink for the deposition of CZTSSe thin-film absorbers in air. The addition of DMF significantly improves the wettability between the precursor ink and Mo substrate. The DMF/(DMF+DMSO) ratio also plays a critical role in determining the crystal quality of the resulting CZTSSe absorber and the device performance. The grain size of CZTSSe thin films increases with increasing DMF/(DMF+DMSO) ratio. Particularly, large grains through the whole cross section can be achieved with 20 % DMF addition. Accordingly, the power conversion efficiency of the device increases from 6.5 % to 8.6 % under AM 1.5G illumination. However, the efficiency decreases to 5.4 % when the DMF content is further increased to 30 %. Interface recombination and back contact barrier are found to be the main limitations of these devices.

Large-scale preparation of size-controlled Fe3O4@SiO2 particles for electrophoretic display with non-iridescent structural colors.

Monodisperse colloidal particles have promising applications in electrophoretic displays with vivid colors, reversibility and low switching times. In this study, a facile, effective and large-scale strategy for preparing size-controlled Fe3O4@SiO2 particles is reported. Multiple Fe3O4 particles were synthesized by a modified solvothermal method using sodium citrate as a surface modifier with a binary solvent, and were then coated with a SiO2 layer to obtain a highly negatively charged surface via a modified Stöber method. Owing to the easily controlled sizes and sufficient surface charges, Fe3O4@SiO2 particles can be assembled into colloidal amorphous arrays with the balance of electrostatic repulsion and electrophoretic forces. The reflections cover wavelengths ranging from 802 to 453 nm, and were optimized by investigating the dependence of the particles on variables such as particle size, particle volume fraction, and electric field intensity. The large-scale preparation of electrically responsive Fe3O4@SiO2 particles facilitates an electrophoretic display with broad-range colors, showing the practical potential in industrial application.