ABSTRACT
In this study, we present a GaAs varactor diode with a hyperabrupt junction for the enhancement of breakdown voltage and capacitance variation in a reverse bias state. The hyperabrupt doping profile in the n-type active layer is prepared in a controlled nonlinear manner, with the density of the dopants increasing towards the Schottky junction. The hyperabrupt GaAs varactor diode is fabricated and characterized for breakdown voltage and capacitance over the electric field, induced by an applied reverse bias voltage. A reduced value of the electric field is observed owing to the nonlinear behavior of the electric field at the hyperabrupt junction, although the device has a larger doping density at the Schottky junction. Furthermore, the capacitance ratio of the hyperabrupt junction diode is also improved. Variation in the device capacitance is affected by variation in the depletion region across the junction. Technology CAD is used to understand the experimental phenomena by considering the magnitude of charge density as a function of the doping profile. A higher breakdown voltage and greater capacitance modulation are shown in the hyperabrupt junction diode compared to the uniform junction diode.
ABSTRACT
Multiple techniques such as fluoride-based plasma treatment, a p-GaN or p-AlGaN gate contact, and a recessed gate structure have been employed to modulate the threshold voltage of AlGaN/GaN-based high-electron-mobility transistors (HEMTs). In this study, we present dual-gate AlGaN/GaN HEMTs grown on a Si substrate, which effectively shift the threshold voltage in the positive direction. Experimental data show that the threshold voltage is shifted from -4.2 V in a conventional single-gate HEMT to -2.8 V in dual-gate HEMTs. It is evident that a second gate helps improve the threshold voltage by reducing the two-dimensional electron gas density in the channel. Furthermore, the maximum drain current, maximum transconductance, and breakdown voltage values of a single-gate device are not significantly different from those of a dual-gate device. For the fabricated single- and dual-gate devices, the values of the maximum drain current are 430 mA/mm and 428 mA/mm, respectively, whereas the values of the maximum transconductance are 83 mS/mm and 75 mS/mm, respectively.
ABSTRACT
In this study, we present the fabrication and characterization of ZnO nanorods (NRs) grown on p-Si, gold (Au) and nickel (Ni) coated on Si wafer, indium tin oxide (ITO), and quartz substrates. The aqueous chemical growth method is used for the vertical growth of ZnO NRs on multiple substrates. The samples are characterized with scanning electron microscope and energy dispersive X-ray spectroscopy to probe into the growth, alignment, density, diameter, and length of ZnO NRs on multiple substrates. It is found that under same conditions, like growth temperature, growth time, and solution concentration, ZnO NRs on ITO and quartz have same length but comparatively larger diameter than on other samples. The effects of growth time on the diameter and length of ZnO NRs are also explored. All the samples are characterized with probe station to look at the current-voltage (I-V) behavior of ZnO NRs on multiple substrates. It is found that ZnO NRs on p-Si show a simple p-n heterojunction diode like behavior. ZnO NRs grown on Au- and Ni-coated Si wafers show Schottky I-V characteristic behaviors while ZnO NRs on ITO show a simple ohmic I-V response with comparatively higher level of current. Finally, the I-V response of ZnO NRs on p-Si is also studied under ultraviolet illumination. Because of the photo-generated carriers in ZnO, the sample shows higher level of current upon illumination.
