Dielectric and energy storage properties of surface-modified BaTi0.89Sn0.11O3@polydopamine nanoparticles embedded in a PVDF-HFP matrix.

In the most recent electronic and electric sectors, ceramic-polymer nanocomposites with high dielectric permittivity and energy density are gaining popularity. However, the main obstacle to improving the energy density in flexible nanocomposites, besides the size and morphology of the ceramic filler, is the low interfacial compatibility between the ceramic and the polymer. This paper presents an alternative solution to improve the dielectric permittivity and energy storage properties for electronic applications. Here, the poly(vinylidene fluoride-hexafluoropropylene) (PVDF-HFP) matrix is filled with surface-modified BaTi0.89Sn0.11O3/polydopamine nanoparticles (BTS11) nanoparticles, which is known for exhibiting multiphase transitions and reaching a maximum dielectric permittivity at room temperature. BTS11 nanoparticles were synthesized by a sol-gel/hydrothermal method at 180 °C and then functionalized by polydopamine (PDA). As a result, the nanocomposites exhibit dielectric permittivity (εr) of 46 and a low loss tangent (tan δ) of 0.017 at 1 kHz at a relatively low weight fraction of 20 wt% of BTS11@PDA. This is approximately 5 times higher than the pure PVDF-HFP polymer and advantageous for energy storage density in nanocomposites. The recovered energy storage for our composites reaches 134 mJ cm-3 at an electric field of 450 kV cm-1 with a high efficiency of 73%. Incorporating PDA-modified BTS11 particles into the PVDF-HFP matrix demonstrates highly piezo-active regions associated with BTS11 particles, significantly enhancing functional properties in the polymer nanocomposites.

Selective Growth of Graphene-Confined Inkjet-Printed Sn Nanoparticles on Plastic Using Intense Pulsed Light Annealing.

Printing graphene-based nanomaterials on flexible substrates has become a burgeoning platform for next-generation technologies. Combining graphene and nanoparticles to create hybrid nanomaterials has been proven to boost device performance, thanks to their complementary physical and chemical properties. However, high growth temperatures and long processing times are often required to produce high-quality graphene-based nanocomposites. For the first time, we report a novel scalable approach for additive manufacturing of Sn patterns on polymer foil and their selective conversion into nanocomposite films under atmospheric conditions. A combination of inkjet printing and intense flashlight irradiation techniques is studied. Light pulses that are selectively absorbed by the printed Sn patterns cause a temperature of over 1000 °C to be reached locally in a split second without damaging the underlying polymer foil. The top surface of the polymer foil at the interface with printed Sn becomes locally graphitized and acts as a carbon source, transforming printed Sn into Sn@graphene (Sn@G) core-shell patterns. Our results revealed a decrease in electrical sheet resistance, with an optimal value (Rs = 72 ± 2 Ω/sq) reached when light pulses with an energy density of 12.8 J/cm2 were applied. These graphene-protected Sn nanoparticle patterns exhibit excellent resistance against air oxidation for months. Finally, we demonstrate the implementation of Sn@G patterns as electrodes for Li-ion microbatteries (LIBs) and triboelectric nanogenerators (TENGs), showing remarkable performance. This work offers new insight into the development of a versatile, eco-friendly, and cost-effective technique for producing well-defined patterns of graphene-based nanomaterials directly on a flexible substrate using different light-absorbing nanoparticles and carbon sources.

Thickness Effect on the Solid-State Reaction of a Ni/GaAs System.

Ni thin films with different thicknesses were grown on a GaAs substrate using the magnetron sputtering technique followed by in situ X-ray diffraction (XRD) annealing in order to study the solid-state reaction between Ni and GaAs substrate. The thickness dependence on the formation of the intermetallic phases was investigated using in situ and ex situ XRD, pole figures, and atom probe tomography (APT). The results indicate that the 20 nm-thick Ni film exhibits an epitaxial relation with the GaAs substrate, which is (001) Ni//(001) GaAs and [111] Ni//[110] GaAs after deposition. Increasing the film's thickness results in a change of the Ni film's texture. This difference has an impact on the formation temperature of Ni3GaAs. This temperature decreases simultaneously with the thickness increase. This is due to the coherent/incoherent nature of the initial Ni/GaAs interface. The Ni3GaAs phase decomposes into the binary and ternary compounds xNiAs and Ni3-xGaAs1-x at about 400 °C. Similarly to Ni3GaAs, the decomposition temperature of the second phase also depends on the initial thickness of the Ni layer.

Photoelectrochemical Enhancement of Graphene@WS2 Nanosheets for Water Splitting Reaction.

Tungsten disulfide nanosheets were successfully prepared by one-step chemical vapor deposition using tungsten oxide and thiourea in an inert gas environment. The size of the obtained nanosheets was subsequently reduced down to below 20 nm in width and 150 nm in length using high-energy ball milling, followed by 0.5 and 1 wt% graphene loading. The corresponding vibrational and structural characterizations are consistent with the fabrication of a pure WS2 structure for neat sampling and the presence of the graphene characteristic vibration modes in graphene@WS2 compounds. Additional morphological and crystal structures were examined and confirmed by high-resolution electron microscopy. Subsequently, the investigations of the optical properties evidenced the high optical absorption (98%) and lower band gap (1.75 eV) for the graphene@WS2 compared to the other samples, with good band-edge alignment to water-splitting reaction. In addition, the photoelectrochemical measurements revealed that the graphene@WS2 (1 wt%) exhibits an excellent photocurrent density (95 µA/cm2 at 1.23 V bias) compared with RHE and higher applied bias potential efficiency under standard simulated solar illumination AM1.5G. Precisely, graphene@WS2 (1 wt%) exhibits 3.3 times higher performance compared to pristine WS2 and higher charge transfer ability, as measured by electrical impedance spectroscopy, suggesting its potential use as an efficient photoanode for hydrogen evolution reaction.

Coupling Secondary Ion Mass Spectrometry and Atom Probe Tomography for Atomic Diffusion and Segregation Measurements.

For a long time, secondary ion mass spectrometry (SIMS) was the only technique allowing impurity concentrations below 1 at% to be precisely measured in a sample with a depth resolution of few nanometers. For example, SIMS is the classical technique used in microelectronics to study dopant distribution in semiconductors and became, after radiotracers were forsaken, the principal tool used for atomic transport characterization (diffusion coefficient measurements). Due to the lack of other equivalent techniques, sometimes SIMS could be used erroneously, especially when the analyzed solute atoms formed clusters, or for interfacial concentration measurements (segregation coefficient measurements) for example. Today, concentration profiles measured by atom probe tomography (APT) can be compared to SIMS profiles and allow the accuracy of SIMS measurements to be better evaluated. However, APT measurements can also carry artifacts and limitations that can be investigated by SIMS. After a summary of SIMS and APT measurement advantages and disadvantages, the complementarity of these two techniques is discussed, particularly in the case of experiments aiming to measure diffusion and segregation coefficients.

Nanoporous Ge thin film production combining Ge sputtering and dopant implantation.

In this work a novel process allowing for the production of nanoporous Ge thin films is presented. This process uses the combination of two techniques: Ge sputtering on SiO2 and dopant ion implantation. The process entails four successive steps: (i) Ge sputtering on SiO2, (ii) implantation preannealing, (iii) high-dose dopant implantation, and (iv) implantation postannealing. Scanning electron microscopy and transmission electron microscopy were used to characterize the morphology of the Ge film at different process steps under different postannealing conditions. For the same postannealing conditions, the Ge film topology was shown to be similar for different implantation doses and different dopants. However, the film topology can be controlled by adjusting the postannealing conditions.

Si/Ge intermixing during Ge Stranski-Krastanov growth.

The Stranski-Krastanov growth of Ge islands on Si(001) has been widely studied. The morphology changes of Ge islands during growth, from nucleation to hut/island formation and growth, followed by hut-to-dome island transformation and dislocation nucleation of domes, have been well described, even at the atomic scale, using techniques such as scanning tunneling microscopy and transmission electron microscopy. Although it is known that these islands do not consist of pure Ge (due to Si/Ge intermixing), the composition of the Ge islands is not precisely known. In the present work, atom probe tomography was used to study the composition of buried dome islands at the atomic scale, in the three-dimensional space. The core of the island was shown to contain about 55 atom % Ge, while the Ge composition surrounding this core decreases rapidly in all directions in the islands to reach a Ge concentration of about 15 atom %. The Ge distribution in the islands follows a cylindrical symmetry and Ge segregation is observed only in the {113} facets of the islands. The Ge composition of the wetting layer is not homogeneous, varying from 5 to 30 atom %.