Robust Mutual Synchronization in Long Spin Hall Nano-oscillator Chains.

Mutual synchronization of N serially connected spintronic nano-oscillators boosts their coherence by N and peak power by N2. Increasing the number of synchronized nano-oscillators in chains holds significance for improved signal quality and emerging applications such as oscillator based unconventional computing. We successfully fabricate spin Hall nano-oscillator chains with up to 50 serially connected nanoconstrictions using W/NiFe, W/CoFeB/MgO, and NiFe/Pt stacks. Our experiments demonstrate robust and complete mutual synchronization of 21 nanoconstrictions at an operating frequency of 10 GHz, achieving line widths <134 kHz and quality factors >79,000. As the number of mutually synchronized oscillators increases, we observe a quadratic increase in peak power, resulting in 400-fold higher peak power in long chains compared to individual nanoconstrictions. While chains longer than 21 nanoconstrictions also achieve complete mutual synchronization, it is less robust, and their signal quality does not improve significantly, as they tend to break into partially synchronized states.

Magnetic force microscopy of an operational spin nano-oscillator.

Magnetic force microscopy (MFM) is a powerful technique for studying magnetic microstructures and nanostructures that relies on force detection by a cantilever with a magnetic tip. The detected magnetic tip interactions are used to reconstruct the magnetic structure of the sample surface. Here, we demonstrate a new method using MFM for probing the spatial profile of an operational nanoscale spintronic device, the spin Hall nano-oscillator (SHNO), which generates high-intensity spin wave auto-oscillations enabling novel microwave applications in magnonics and neuromorphic computing. We developed an MFM system by adding a microwave probe station to allow electrical and microwave characterization up to 40 GHz during the MFM process. SHNOs-based on NiFe/Pt bilayers with a specific design compatible with the developed system-were fabricated and scanned using a Co magnetic force microscopy tip with 10 nm spatial MFM resolution, while a DC current sufficient to induce auto-oscillation flowed. Our results show that this developed method provides a promising path for the characterization and nanoscale magnetic field imaging of operational nano-oscillators.

Fabrication of voltage-gated spin Hall nano-oscillators.

We demonstrate an optimized fabrication process for electric field (voltage gate) controlled nano-constriction spin Hall nano-oscillators (SHNOs), achieving feature sizes of <30 nm with easy to handle ma-N 2401 e-beam lithography negative tone resist. For the nanoscopic voltage gates, we utilize a two-step tilted ion beam etching approach and through-hole encapsulation using 30 nm HfOx. The optimized tilted etching process reduces sidewalls by 75% compared to no tilting. Moreover, the HfOx encapsulation avoids any sidewall shunting and improves gate breakdown. Our experimental results on W/CoFeB/MgO/SiO2 SHNOs show significant frequency tunability (6 MHz V-1) even for moderate perpendicular magnetic anisotropy. Circular patterns with diameter of 45 nm are achieved with an aspect ratio better than 0.85 for 80% of the population. The optimized fabrication process allows incorporating a large number of individual gates to interface to SHNO arrays for unconventional computing and densely packed spintronic neural networks.

Memristive control of mutual spin Hall nano-oscillator synchronization for neuromorphic computing.

Synchronization of large spin Hall nano-oscillator (SHNO) arrays is an appealing approach toward ultrafast non-conventional computing. However, interfacing to the array, tuning its individual oscillators and providing built-in memory units remain substantial challenges. Here, we address these challenges using memristive gating of W/CoFeB/MgO/AlOx-based SHNOs. In its high resistance state, the memristor modulates the perpendicular magnetic anisotropy at the CoFeB/MgO interface by the applied electric field. In its low resistance state the memristor adds or subtracts current to the SHNO drive. Both electric field and current control affect the SHNO auto-oscillation mode and frequency, allowing us to reversibly turn on/off mutual synchronization in chains of four SHNOs. We also demonstrate that two individually controlled memristors can be used to tune a four-SHNO chain into differently synchronized states. Memristor gating is therefore an efficient approach to input, tune and store the state of SHNO arrays for non-conventional computing models.

A single layer spin-orbit torque nano-oscillator.

Spin torque and spin Hall effect nano-oscillators generate high intensity spin wave auto-oscillations on the nanoscale enabling novel microwave applications in spintronics, magnonics, and neuromorphic computing. For their operation, these devices require externally generated spin currents either from an additional ferromagnetic layer or a material with a high spin Hall angle. Here we demonstrate highly coherent field and current tunable microwave signals from nano-constrictions in single 15-20 nm thick permalloy layers with oxide interfaces. Using a combination of spin torque ferromagnetic resonance measurements, scanning micro-Brillouin light scattering microscopy, and micromagnetic simulations, we identify the auto-oscillations as emanating from a localized edge mode of the nano-constriction driven by spin-orbit torques. Our results pave the way for greatly simplified designs of auto-oscillating nano-magnetic systems only requiring single ferromagnetic layers with oxide interfaces.

Direct Observation of Zhang-Li Torque Expansion of Magnetic Droplet Solitons.

Magnetic droplets are nontopological dynamical solitons that can be nucleated in nanocontact based spin torque nano-oscillators (STNOs) with perpendicular magnetic anisotropy free layers. While theory predicts that the droplet should be of the same size as the nanocontact, its inherent drift instability has thwarted attempts at observing it directly using microscopy techniques. Here, we demonstrate highly stable magnetic droplets in all-perpendicular STNOs and present the first detailed droplet images using scanning transmission X-ray microscopy. In contrast to theoretical predictions, we find that the droplet diameter is about twice as large as the nanocontact. By extending the original droplet theory to properly account for the lateral current spread underneath the nanocontact, we show that the large discrepancy primarily arises from current-in-plane Zhang-Li torque adding an outward pressure on the droplet perimeter. Electrical measurements on droplets nucleated using a reversed current in the antiparallel state corroborate this picture.

A 20 nm spin Hall nano-oscillator.

Spin Hall nano-oscillators (SHNOs) are an emerging class of pure spin current driven microwave signal generators. Through the fabrication of 20 nm nano-constrictions in Pt/NiFe bilayers, we demonstrate that SHNOs can be scaled down to truly nanoscopic dimensions, with the added benefit of ultra-low operating currents and improved power conversion efficiency. The lateral confinement leads to a strong shape anisotropy field as well as an additional demagnetizing field whose reduction with increasing auto-oscillation amplitude can yield a positive current tunability contrary to the negative tunability commonly observed for localized excitations in extended magnetic layers. Micromagnetic simulations corroborate the experimental findings and suggest that the active magnetodynamic area resides up to 100 nm outside of the nano-constriction.