Tunable dual-band graphene-based infrared reflectance filter.

We experimentally demonstrated an actively tunable optical filter that controls the amplitude of reflected long-wave-infrared light in two separate spectral regions concurrently. Our device exploits the dependence of the excitation energy of plasmons in a continuous and unpatterned sheet of graphene on the Fermi-level, which can be controlled via conventional electrostatic gating. The filter enables simultaneous modification of two distinct spectral bands whose positions are dictated by the device geometry and graphene plasmon dispersion. Within these bands, the reflected amplitude can be varied by over 15% and resonance positions can be shifted by over 90 cm-1. Electromagnetic simulations verify that tuning arises through coupling of incident light to graphene plasmons by a grating structure. Importantly, the tunable range is determined by a combination of graphene properties, device structure, and the surrounding dielectrics, which dictate the plasmon dispersion. Thus, the underlying design shown here is applicable across a broad range of infrared frequencies.

Graphene-Insulator-Semiconductor Junction for Hybrid Photodetection Modalities.

A sensitive optical detector is presented based on a deeply depleted graphene-insulator-semiconducting (D2GIS) junction, which offers the possibility of simultaneously leveraging the advantages of both charge integration and localized amplification. Direct read-out and built-in amplification are accomplished via photogating of a graphene field-effect transistor (GFET) by carriers generated within a deeply depleted low-doped silicon substrate. Analogous to a depleted metal-oxide-semiconducting junction, photo-generated charge collects in the potential well that forms at the semiconductor/insulator interface and induces charges of opposite polarity within the graphene film modifying its conductivity. This device enables simultaneous photo-induced charge integration with continuous "on detector" readout through use of graphene. The resulting devices exhibit responsivities as high as 2,500 A/W (25,000 S/W) for visible wavelengths and a dynamic range of 30 dB. As both the graphene and device principles are transferrable to arbitrary semiconductor absorbers, D2GIS devices offer a high-performance paradigm for imaging across the electromagnetic spectrum.

Designing graphene absorption in a multispectral plasmon-enhanced infrared detector.

We have examined graphene absorption in a range of graphene-based infrared devices that combine either monolayer or bilayer graphene with three different gate dielectrics. Electromagnetic simulations show that the optical absorption in graphene in these devices, an important factor in a functional graphene-based detector, is strongly dielectric-dependent. These simulations reveal that plasmonic excitation in graphene can significantly influence the percentage of light absorbed in the entire device, as well as the graphene layer itself, with graphene absorption exceeding 25% in regions where plasmonic excitation occurs. Notably, the dielectric environment of graphene has a dramatic influence on the strength and wavelength range over which the plasmons can be excited, making dielectric choice paramount to final detector tunability and sensitivity.

Chelant Enhanced Solution Processing for Wafer Scale Synthesis of Transition Metal Dichalcogenide Thin Films.

It is of paramount importance to improve the control over large area growth of high quality molybdenum disulfide (MoS2) and other types of 2D dichalcogenides. Such atomically thin materials have great potential for use in electronics, and are thought to make possible the first real applications of spintronics. Here in, a facile and reproducible method of producing wafer scale atomically thin MoS2 layers has been developed using the incorporation of a chelating agent in a common organic solvent, dimethyl sulfoxide (DMSO). Previously, solution processing of a MoS2 precursor, ammonium tetrathiomolybdate ((NH4)2MoS4), and subsequent thermolysis was used to produce large area MoS2 layers. Our work here shows that the use of ethylenediaminetetraacetic acid (EDTA) in DMSO exerts superior control over wafer coverage and film thickness, and the results demonstrate that the chelating action and dispersing effect of EDTA is critical in growing uniform films. Raman spectroscopy, photoluminescence (PL), x-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM) and high-resolution scanning transmission electron microscopy (HR-STEM) indicate the formation of homogenous few layer MoS2 films at the wafer scale, resulting from the novel chelant-in-solution method.

Visibility of dielectrically passivated graphene films.

The visibility of monolayer graphene is dependent on its surrounding dielectric environment and the presence of any contamination associated with 2D layer transfer. Here, the optical contrast of residually contaminated monolayer graphene encased within a range of dielectric stacks characteristic of realistic devices is examined, highlighting the utility of optical microscopy for a graphene assessment, both during and after lithographic processing. Practically, chemical vapor deposited graphene is encapsulated in dielectric stacks of varying thicknesses of SiO2. Optical contrast is then measured and compared to predictions of a multilayer model. Experimentally measured contrast is in close agreement with simulation only when contamination is included.

Self-Heating and Failure in Scalable Graphene Devices.

Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. The discrepancy arises due to morphological irregularities implicit to the graphene synthesis method that induce localized heating. Morphology, rather than thermal resistance, therefore dictates power handling limits in graphene devices.

Near-infrared surface plasmon polariton dispersion control with hyperbolic metamaterials.

We demonstrate experimentally signatures and dispersion control of surface plasmon polaritons from 1 to 1.8 µm using periodic multilayer metallo-dielectric hyperbolic metamaterials. The fabricated structures are comprised of smooth films with very low metal filling factor. The measured dispersion properties of these hyperbolic metamaterials agree well with calculations using transfer matrix, finite-difference time-domain, and effective medium approximation methods despite using only 2.5 periods. The enhancement factor in the local photonic density of states from the studied samples in the near-infrared wavelength region is determined to be 2.5-3.5. Development of this type of metamaterial is relevant to sub-wavelength imaging, spontaneous emission and thermophotovoltaic applications.

Potential-directed assembly of aryl iodonium salts onto silicon {100} hydride terminated and platinum surfaces.

A novel electrograft method of forming covalent bonds directly to silicon hydride or platinum surfaces has been demonstrated with the use of iodonium salt precursors. Initially, a silicon substrate is treated with a dilute hydrofluoric acid wash to ensure a hydride-passivated surface, which is immersed in a solution of iodonium salt dissolved in a solution of tetrabutylammonium tetrafluoroborate in acetonitrile. Grafting is accomplished by applying a negative bias to the silicon substrate. Directed assembly has been demonstrated with Pt substrates.

Novel one-dimensional nanogap created with standard optical lithography and evaporation procedures.

This article details a simple four-step procedure to create a one-dimensional nanogap on a buried oxide substrate that relies on conventional photolithography performed on a stack of silicon/silicon oxide/silicon, metal evaporation, and hydrofluoric acid oxide removal. Once the nanogap was fabricated it was bridged with an assembly of 1,8-octanedithiol and 5 nm Au nanoparticles capped with a sacrificial dodecylamine coating. Before assembly, characterization of the nanogaps was performed through electrical measurements and SEM imaging. Post assembly, the resistance of the nanogaps was evaluated. The current increased from 70 fA to 200 microA at +1 V bias, clearly indicating a modification due to nanoparticle molecule assembly. Control experiments without nanoparticles or octanedithiol did not show an increase in current.