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1.
Solid State Electron ; 65-66(6-3): 81-87, 2011 Nov.
Article in English | MEDLINE | ID: mdl-22180668

ABSTRACT

The potential of strained DOTFET technology is demonstrated. This technology uses a SiGe island as a stressor for a Si capping layer, into which the transistor channel is integrated. The structure information of fabricated samples is extracted from atomic force microscopy (AFM) measurements. Strain on the upper surface of a 30 nm thick Si layer is in the range of 0.7%, as supported by finite element calculations. The Ge content in the SiGe island is 30% on average, showing an increase towards the top of the island. Based on the extracted structure information, three-dimensional strain profiles are calculated and device simulations are performed. Up to 15% enhancement of the NMOS saturation current is predicted.

2.
Nano Lett ; 11(7): 2875-80, 2011 Jul 13.
Article in English | MEDLINE | ID: mdl-21627099

ABSTRACT

For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor.


Subject(s)
Germanium/chemistry , Nanotechnology , Quantum Dots , Silicon/chemistry , Transistors, Electronic , Particle Size , Semiconductors , Surface Properties , X-Rays
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