1.
ACS Appl Mater Interfaces
; 3(4): 1341-5, 2011 Apr.
Article
in English
| MEDLINE
| ID: mdl-21443255
ABSTRACT
Good ohmic contact to n-type indium phosphide (n-InP) with cadmium oxide (CdO), a transparent conducting oxide (TCO), has been achieved. Hydrogen plasma surface pretreatment of the n-InP substrate, prior to the pulsed laser deposition (PLD) of the CdO film, is key to achieving ohmic contact. On substrates pretreated with a hydrogen plasma, contact resistances as low as (6.8 ± 2.8) × 10(-6) Ω cm(2) are obtained.