ABSTRACT
We report the observation of QΓ intervalley exciton in bilayer WSe2 devices encapsulated by boron nitride. The QΓ exciton resides at â¼18 meV below the QK exciton. The QΓ and QK excitons exhibit different Stark shifts under an out-of-plane electric field due to their different interlayer dipole moments. By controlling the electric field, we can switch their energy ordering and control which exciton dominates the luminescence of bilayer WSe2. Remarkably, both QΓ and QK excitons exhibit unusually strong two-phonon replicas, which are comparable to or even stronger than the one-phonon replicas. By detailed theoretical simulation, we reveal the existence of numerous (≥14) two-phonon scattering paths involving (nearly) resonant exciton-phonon scattering in bilayer WSe2. To our knowledge, such electric-field-switchable intervalley excitons with strong two-phonon replicas have not been found in any other two-dimensional semiconductors. These make bilayer WSe2 a distinctive valleytronic material with potential novel applications.
ABSTRACT
A shortcut to adiabatic mode conversion in multimode waveguides using optical analogy of stimulated Raman adiabatic passage is investigated. The design of mode converters using the shortcut scheme is discussed. Computer-generated planar holograms are used to mimic the shaped pulses used to speed up adiabatic passage in quantum systems based on the transitionless quantum driving algorithm. The mode coupling properties are analyzed using the coupled mode theory and beam propagation simulations. We show reduced device length using the shortcut scheme as compared to the common adiabatic scheme. Modal evolution in the shortened device indeed follows the adiabatic eigenmode exactly amid the violation of adiabatic criterion.
