Non-Ultrawide Bandgap Semiconductor GaSe Nanobelts for Sensitive Deep Ultraviolet Light Photodetector Application.

In this paper, the authors report the fabrication of a sensitive deep ultraviolet (DUV) photodetector by using an individual GaSe nanobelt with a thickness of 52.1 nm, which presents the highest photoresponse at 265 nm illumination with a responsivity and photoconductive gain of about 663 A W-1 and 3103 at a 3 V bias, respectively, comparable to or even better than other reported devices based on conventional wide bandgap semiconductors. According to the simulation, this photoelectric property is associated with the wavelength-dependent absorption coefficient of the GaSe crystal, for which incident light with shorter wavelengths will be absorbed near the surface, while light with longer wavelengths will have a larger penetration depth, leading to a blueshift of the absorption edge with decreasing thickness. Further finite element method (FEM) simulation reveals that the relatively thin GaSe nanobelt exhibits an enhanced transversal standing wave pattern compared to its thicker counterpart at a wavelength of 265 nm, leading to an enhanced light-matter interaction and thereby more efficient photocurrent generation. The device can also function as an effective image sensor with acceptable spatial resolution. This work will shed light on the facile fabrication of a high-performance DUV photodetector from non-ultrawide bandgap semiconductors.

Light Confinement Effect Induced Highly Sensitive, Self-Driven Near-Infrared Photodetector and Image Sensor Based on Multilayer PdSe2 /Pyramid Si Heterojunction.

In this study, a highly sensitive and self-driven near-infrared (NIR) light photodetector based on PdSe2 /pyramid Si heterojunction arrays, which are fabricated through simple selenization of predeposited Pd nanofilm on black Si, is demonstrated. The as-fabricated hybrid device exhibits excellent photoresponse performance in terms of a large on/off ratio of 1.6 × 105 , a responsivity of 456 mA W-1 , and a high specific detectivity of up to 9.97 × 1013 Jones under 980 nm illumination at zero bias. Such a relatively high sensitivity can be ascribed to the light trapping effect of the pyramid microstructure, which is confirmed by numerical modeling based on finite-difference time domain. On the other hand, thanks to the broad optical absorption properties of PdSe2 , the as-fabricated device also exhibits obvious sensitivity to other NIR illuminations with wavelengths of 1300, 1550, and 1650 nm, which is beyond the photoresponse range of Si-based devices. It is also found that the PdSe2 /pyramid Si heterojunction device can also function as an NIR light sensor, which can readily record both "tree" and "house" images produced by 980 and 1300 nm illumination, respectively.

Dual-plasmonic Au/graphene/Au-enhanced ultrafast, broadband, self-driven silicon Schottky photodetector.

High-performance photodetectors are desirable for various applications, including multi-wavelength image sensing, communication, and safety monitoring. In this study, we report the construction of a dual-surface plasmon-enhanced silicon Schottky photodetector using Au nanoparticles (NPs)/graphene/Au NPs hybrid structure as the electrode. It was found that the as-assembled device exhibited broad sensitivity, ranging from ultraviolet to near-infrared light (360-1330 nm) at room temperature, with a high response speed of 360 ns and a 3 dB bandwidth of 780 kHz at zero bias. Further theoretical simulation based on the finite-element method revealed that good device performance is associated with the contribution of the Au NPs/graphene/Au NPs electrode: intense dual-plasmonic resonance coupling is induced in a hybrid structure of two layers of metallic NPs separated by a uniform monolayer graphene. It not only can enhance light trapping and the localized electric field at the resonant and off-resonant wavelength regions, but is also beneficial for the tunneling of hot electrons. This work demonstrated the great potential of dual-plasmonic resonance coupling in optoelectronic devices and will lead to the development of advanced plasmonic devices.

Mesoporous anodic α-Fe2O3 interferometer for organic vapor sensing application.

In this work, we reported the utilization of mesoporous α-Fe2O3 films as optical sensors for detecting organic vapors. The mesoporous α-Fe2O3 thin films, which exhibited obvious Fabry-Perot interference fringes in the reflectance spectrum, were successfully fabricated through electrochemical anodization of Fe foils. Through monitoring the optical thickness of the interference fringes, three typical organic species with different vapor pressures and polarities (hexane, acetone and isopropanol) were applied as probes to evaluate the sensitivity of the α-Fe2O3 based interferometric sensor. The experiment results showed that the as-synthesized mesoporous α-Fe2O3 interferometer displayed high reversibility and stability for the three organic vapors, and were especially sensitive to isopropanol, with a detection limit of about 65 ppmv. Moreover, the photocatalytic properties of α-Fe2O3 under visible light are beneficial for degradation of dodecane vapor residues in the nano-pores and refreshment of the sensor, demonstrating good self-cleaning properties of the α-Fe2O3-based interferometric sensor.

The effect of plasmonic nanoparticles on the optoelectronic characteristics of CdTe nanowires.

In this work, a simple strategy is proposed to improve the device performance of photodetector by modifying plasmonic nanoparticles onto the surface of semiconductors nanostructure. Both experimental analysis and theoretical simulation show that the plasmonic metal nanoparticles (AuNPs) exhibits obvious localized surface plasmon resonance (LSPR) which can trap incident light efficiently, leading to enhanced photocurrents and improved performance of photoelectronic devices. It is also observed that the AuNPs modified CdTeNW photodetector exhibit apparent sensitivity to 510 nm light, to which pure CdTeNWs is virtually blind. What is more, after AuNPs decoration, the response speed of the photodetector is increased substantially from 6.12 to 1.92 s. It is believed that this result will open up new doors for manipulating light and further improving the efficiency of semiconductor nanostructures based optoelectronic devices.

Light trapping and surface plasmon enhanced high-performance NIR photodetector.

Heterojunctions near infrared (NIR) photodetectors have attracted increasing research interests for their wide-ranging applications in many areas such as military surveillance, target detection, and light vision. A high-performance NIR light photodetector was fabricated by coating the methyl-group terminated Si nanowire array with plasmonic gold nanoparticles (AuNPs) decorated graphene film. Theoretical simulation based on finite element method (FEM) reveals that the AuNPs@graphene/CH3-SiNWs array device is capable of trapping the incident NIR light into the SiNWs array through SPP excitation and coupling in the AuNPs decorated graphene layer. What is more, the coupling and trapping of freely propagating plane waves from free space into the nanostructures, and surface passivation contribute to the high on-off ratio as well.

Monolayer graphene/germanium Schottky junction as high-performance self-driven infrared light photodetector.

We report on the simple fabrication of monolayer graphene (MLG)/germanium (Ge) heterojunction for infrared (IR) light sensing. It is found that the as-fabricated Schottky junction detector exhibits obvious photovoltaic characteristics, and is sensitive to IR light with high Ilight/Idark ratio of 2 × 10(4) at zero bias voltage. The responsivity and detectivity are as high as 51.8 mA W(-1) and 1.38 × 10(10) cm Hz(1/2) W(-1), respectively. Further photoresponse study reveals that the photovoltaic IR detector displays excellent spectral selectivity with peak sensitivity at 1400 nm, and a fast light response speed of microsecond rise/fall time with good reproducibility and long-term stability. The generality of the above results suggests that the present MLG/Ge IR photodetector would have great potential for future optoelectronic device applications.

Monolayer graphene film on ZnO nanorod array for high-performance Schottky junction ultraviolet photodetectors.

A new Schottky junction ultraviolet photodetector (UVPD) is fabricated by coating a free-standing ZnO nanorod (ZnONR) array with a layer of transparent monolayer graphene (MLG) film. The single-crystalline [0001]-oriented ZnONR array has a length of about 8-11 µm, and a diameter of 100∼600 nm. Finite element method (FEM) simulation results show that this novel nanostructure array/MLG heterojunction can trap UV photons effectively within the ZnONRs. By studying the I-V characteristics in the temperature range of 80-300 K, the barrier heights of the MLG film/ZnONR array Schottky barrier are estimated at different temperatures. Interestingly, the heterojunction diode with typical rectifying characteristics exhibits a high sensitivity to UV light illumination and a quick response of millisecond rise time/fall times with excellent reproducibility, whereas it is weakly sensitive to visible light irradiation. It is also observed that this UV photodetector (PD) is capable of monitoring a fast switching light with a frequency as high as 2250 Hz. The generality of the above results suggest that this MLG film/ZnONR array Schottky junction UVPD will have potential application in future optoelectronic devices.

Fabrication of p-type ZnSe:Sb nanowires for high-performance ultraviolet light photodetector application.

p-type ZnSe nanowires (NWs) with tunable electrical conductivity were fabricated on a large scale by evaporating a mixed powder composed of ZnSe and Sb in different ratios. According to the structural characterization, the Sb-doped ZnSe NWs are of single crystalline form and grow along the [001] direction. The presence of Sb in the ZnSe NWs was confirmed by XPS spectra. Electrical measurement of a single ZnSe:Sb NW based back-gate metal-oxide field-effect-transistor reveals that all the doped NWs exhibit typical p-type conduction characteristics, and the conductivity can be tuned over eight orders of magnitude, from 6.36 × 10(-7) S cm(-1) for the undoped sample to ∼37.33 S cm(-1) for the heavily doped sample. A crossed p-n nano-heterojunction photodetector made from the as-doped nanostructures displays pronounced rectification behavior, with a rectification ratio as high as 10(3) at ±5 V. Remarkably, it exhibits high sensitivity to ultraviolet light illumination with good reproducibility and quick photoresponse. Finally, the work mechanism of such a p-n junction based photodetector was elucidated. The generality of the above result suggests that the as-doped p-type ZnSe NWs will find wide application in future optoelectronics devices.

Expression and clinical significance of Ezrin and E-cadherin in esophageal squamous cell carcinoma.

BACKGROUND AND OBJECTIVE: It has been proven that Ezrin protein may interact with E-cadherin protein and take part in metastasis of tumor cells. This study was to investigate the expressions of Ezrin and E-cadherin in esophageal squamous cell carcinoma (ESCC) and their relationship with the clinicopathologic factors, and analyze their diagnostic values for ESCC. METHODS: The expression of Ezrin and E-cadherin in 72 specimen of ESCC and the paracancer normal squamous epithelium was detected using tissue array with SP immunohistochemistry. Their correlations to the clinicopathologic factors were analyzed statistically. RESULTS: The positive rate of Ezrin was significantly higher in ESCC than in para-cancer normal squamous epithelium (90.7% vs. 46.0%, P < 0.001); the positive rate of E-cadherin was significantly lower in ESCC than in para-cancer normal squamous epithelium (27.6% vs. 97.4%, P < 0.001). Ezrin expression was related to the invasiveness and lymph node metastasis of ESCC (P < 0.05); E-cadherin expression was related to the differentiation and lymph node metastasis of ESCC (P < 0.05). The high expression of Ezrin was related to the low expression of E-cadherin (P < 0.05). CONCLUSION: The activation of Ezrin and the absence of E-cadherin contribute to the tumorigenesis and metastasis of ESCC.