Large lateral photovoltaic effect with ultrafast optical relaxation time in SnS2/n-Si junctions.

A large lateral photovoltaic effect (LPE) with a fast optical response time is necessary to develop high-performance position-sensitive detectors. In this paper, we report an LPE with a high self-powered position sensitivity and ultrafast optical relaxation time in S n S 2/n-S i junctions prepared using pulsed laser deposition. A large built-in electric field was generated at the S n S 2/S i interface, which resulted in a large LPE with a positional sensitivity of up to 116 mV/mm. Furthermore, the measurement circuit with multiple parallel resistors had a strong influence on the ultrafast optical response time of the LPE and the fastest optical relaxation time observed was ∼0.44µs. Our results suggest that the S n S 2/S i junction would be a promising candidate for a wide range of optoelectronic device applications.

High-Performance Self-Powered Photodetector Based on the Lateral Photovoltaic Effect of All-Inorganic Perovskite CsPbBr3 Heterojunctions.

CsPbBr3, an inorganic halide perovskite, has attracted great interest in recent years due to its excellent photoelectric properties. In this paper, we report a high-performance position-sensitive detector and laser communication sensor based on a CsPbBr3/4H-SiC heterojunction that effectively exploits the lateral photovoltaic (LPV) effect. The X-ray diffraction, X-ray photoelectron spectra, and photoluminescence data indicate that a high-quality CsPbBr3 film has been successfully obtained using pulsed laser deposition. The thickness of the CsPbBr3 film is shown to play a key role in the open-circuit voltage and linear LPV. A large position sensitivity (up to 827 mV/mm) of the LPV with a fast relaxation time is observed. Moreover, the shortest relaxation time of only 0.34 µs for 532 nm laser irradiation among counterparts is achieved in the detector under consideration. Furthermore, the position sensitivity and relaxation time of the LPV in the CsPbBr3/4H-SiC heterojunction show a weak dependence on the laser wavelength from 266 to 532 nm. The robust characteristics of fast relaxation time and high position sensitivity of the LPV make the CsPbBr3 junction a promising candidate for both laser communication sensors and self-powered high-performance position-sensitive detectors.

Efficient Hydrogen and Oxygen Evolution Catalysis Using 3D-Structured Nickel Phosphosulfide Nanosheets in Alkaline Media.

Water electrolysis offers a zero-carbon route to generate renewable energy conversion systems. Herein, a self-supported nickel phosphosulfide nanosheet (NS) electrocatalyst was fabricated at a low temperature on carbon cloth, which was then subjected to Ar etching to enhance its catalytic activity. Etching resulted in better hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) performance than other samples, with overpotentials of 103.1 mV (at 10 mA cm-2) and 278.9 mV (at 50 mA cm-2), respectively. The characterization results confirmed that Ar etching created a thin amorphous layer around the NiPS3 NSs, which increased the number of active sites and modulated their electronic structures. These 3D-structured NiPS3 NSs and their subsequent Ar etching process show promise for applications in overall water splitting in alkaline media.