ABSTRACT
The energetic alignment of band edges at the interface plays a central role in determining the properties and applications of two-dimensional (2D) van der Waals (vdW) heterostructures. Generally, three conventional heterojunction types (type-I, type-II, and type-III) have widely been investigated and used in diverse fields. Unconventional band alignments (type-IV, type-V, and type-VI) are, however, hitherto unreported in the vdW heterostructures. We find that 2D binary semiconductors composed of group IV-V elements manifest a similar electronic structure, offering in principle the possibility of designing heterostructures with novel band alignments due to the hybridization of band-edge states. We first show here that a 2D SiAs/GeP heterostructure exhibits a type-VI band alignment, which is induced by the interlayer pz orbital hybridization, and a transition of band alignment from type-VI to type-V occurs when strain or electric field is applied over a critical value. The unconventional band alignments and their transition natures enable broad application of these vdW heterostructures in special opto-electronic devices and energy conversion.
ABSTRACT
Two-dimensional (2D) penta-graphene (PG) with unique properties that can even outperform graphene is attracting extensive attention because of its promising application in nanoelectronics. Herein, we investigate the electronic and transport properties of monolayer PG with typical small gas molecules, such as CO, CO2, NH3, NO and NO2, to explore the sensing capabilities of this monolayer by using first-principles and non-equilibrium Green's function (NEGF) calculations. The optimal position and mode of adsorbed molecules are determined, and the important role of charge transfer in adsorption stability and the influence of chemical bond formation on the electronic structure of the adsorption system are explored. It is demonstrated that monolayer PG is most preferred for the NOx (x = 1, 2) molecules with suitable adsorption strength and apparent charge transfer. Moreover, the current-voltage (I-V) curves of PG display a tremendous reduction of 88% (90%) in current after NO2 (NO) adsorption. The superior sensing performance of PG rivals or even surpasses that of other 2D materials such as graphene and phosphorene. Such ultrahigh sensitivity and selectivity to nitrogen oxides make PG a superior gas sensor that promises wide-ranging applications.
ABSTRACT
The strain effect on the ferroelectric and magnetoelectric coupling in multiferroic tunnel junction (MFTJ) Co/BaTiO3/Co has been investigated systematically by using first-principles calculations within density functional theory. It is found that both in-plane compressive strain and uniaxial tensile strain lead to the enhancement of ferroelectric polarization stability and intensity of magnetoelectric coupling in the MFTJ. There is a transition from the paraelectric phase to the ferroelectric phase for the BaTiO3 layer in MFTJ when the loaded in-plane compressive strain increases up to -2.8% and the corresponding average ferroelectric polarization is about 0.13 C m(-2). Meanwhile, the calculated surface magnetoelectric coefficients increase with increasing in-plane compressive strain. Similar phenomena have been also observed in the case of uniaxial tensile strain implemented in MFTJ. The results suggest that the ferroelectric polarization and magnetoelectric coupling in multiferroic tunnel junctions can be controlled by strain and we expect that this study can provide a theoretical basis for the design of spintronic devices.
ABSTRACT
The origin of magnetism induced by vacancies on BaTiO(3)(001) surfaces is investigated systematically by first-principles calculations within density-functional theory. The calculated results show that O vacancy is responsible for the magnetism of the BaO-terminated surface and the magnetism of the TiO(2)-terminated surface is induced by Ti vacancy. For the BaO-terminated surface, the magnetism mainly arises from the unpaired electrons that are localized in the O vacancy basin. In contrast, for the TiO(2)-terminated surface, the magnetism mainly originates from the partially occupied O-2p states of the first nearest neighbor O atoms surrounding the Ti vacancy. These results suggest the possibility of implementing magneto-electric coupling in conventional ferroelectric materials.
ABSTRACT
Electronic and magnetic properties of BiCoO(3) have been investigated using the ab initio density-functional calculations with local spin density approximation (LSDA) and LSDA+U methods. The structural stability and the origin of the multiferroism for ferroelectronic and ferromagnetic existence were addressed. It was shown that the stability of the C-type antiferromagnetic (C-AFM) structure is better than that of other possible configurations. The hybridization between Bi-O and Co-O with interplay and a local magnetic moment on the Co(3+) play important roles for the nature of the ferroelectricity and ferromagnetism. Theoretical calculations predict the insulating ground state with a band gap of 2.11 eV in the C-AFM ordering for BiCoO(3) originated from the antiferromagnetic interaction in the ab plane, which is in well agreement with experiments.
ABSTRACT
First-principles calculations are employed to study the surface relaxation and electronic structure of the fully relaxed SrTiO(3) (001) oxygen-vacancy surfaces with both Sr and Ti terminations. In contrast to the perfect surface, the larger surface rumples and smaller interlayer distances have been found. Some in-gap Ti 3d states at about -1.13 eV below the Fermi level were observed in the Ti-terminated surface caused by oxygen vacancies. For the Sr-terminated oxygen-vacancy surface, some in-gap Ti 3d states move into the bulk midgap region to become partially occupied. These theoretical results are in agreement with the experimental data.
