The development of a hydrogen-helium dual-beam ion implanter.

Multiple ion beam facilities are powerful tools to simulate the irradiation effects of neutrons on relevant nuclear materials. Since hydrogen and helium are often generated in neutron irradiated materials as transmutation products and they play important roles in the defect evolution, the triple beam accelerator and transmission electron microscope link in situ facility instead of a monobeam or dual-beam facility is necessary to simulate neutron irradiation. A hydrogen-helium dual-beam ion implanter has been developed for a triple ion beam in situ facility at Xiamen University. A Penning ion source has been developed to produce H2 + and He+ simultaneously. A special system consisting of two Wien filters and an Einzel lens has been proposed to purify the species from a single Penning source and allow for the measurement of the He+/H2 + ratio, without disturbing the accelerator settings. The detail of this dual-beam ion implanter will be introduced in detail.

Comparison of Vacancy Sink Efficiency of Cu/V and Cu/Nb Interfaces by the Shared Cu Layer.

This paper provides a new method to compare and then reveal the vacancy sink efficiencies quantitively between different hetero-interfaces with a shared Cu layer in one sample, in contrast to previous studies, which have compared the vacancy sink efficiencies of interfaces in different samples. Cu-Nb-Cu-V nanoscale metallic multilayer composites (NMMCs) containing Cu/V and Cu/Nb interfaces periodically were prepared as research samples and bombarded with helium ions to create vacancies which were filled by helium bubbles. A special Cu layer shared by adjoining Cu/V and Cu/Nb interfaces exists, in which the implanted helium concentration reaches its maximum and remains nearly constant with a well-designed incident energy. The results show that bubble-denuded zones (BDZ) close to interfaces exist, and that the width of the BDZ close to the Cu/V interface is less than that of Cu/Nb interface. This result is explained by one-dimensional diffusion theory, and the ratio of vacancy sink efficiency between Cu/V and Cu/Nb interfaces is calculated. Conclusively, Cu/Nb interfaces are more efficient than Cu/V interfaces in eliminating vacancies induced by radiation.