In Situ Observation of Fracture along Twin Boundaries in Boron Carbide.

The observation of fracture behaviors in perfect and twinned B4 C crystals via in situ transmission electron microscopy (TEM) mechanical testing is reported. The crystal structure of the synthesized B4 C, composed of B11 C icosahedra connected by boron-deficient C-▫-C chains in a chemical formula of B11 C3 , is determined by state-of-the-art aberration-corrected scanning TEM. The in situ TEM observations reveal that cracking is preferentially initiated at the twin boundaries (TBs) in B4 C under both indentation and tension loading. The cracks then propagate along the TBs, thus resulting in the fracture of B4 C. These results are consistent with the theoretical calculations that show that TBs have a softening effect on B4 C with amorphous bands preferentially nucleated at the TBs. These findings elucidate the atomic arrangement and the role of planar defects in the failure of B4 C. Furthermore, they can guide the design of advanced superhard materials via planar defect control.

Inclined Ultrathin Bi2O2Se Films: A Building Block for Functional van der Waals Heterostructures.

As an emerging ultrathin semiconductor material, Bi2O2Se exhibits prominent performances in electronics, optoelectronics, ultrafast optics, etc. However, until now, the in-plane growth of Bi2O2Se thin films is mostly fulfilled on atomically flat mica substrates with interfacial electrostatic forces setting obstacles for Bi2O2Se transfer to fabricate functional van der Waals heterostructures. In this work, controlled growth of inclined Bi2O2Se ultrathin films is realized with apparently reduced interfacial contact areas upon mica flakes. Consequently, the transfer of Bi2O2Se could be facile by overcoming weaker electrostatic interactions. From cross-sectional characterizations at the Bi2O2Se/mica interfaces, it is found that there are no oxide buffer layers in existence for both in-plane and inclined growths, while the un-neutralized charge density is apparently decreased for inclined films. By mechanical pressing, inclined Bi2O2Se could be transferred onto SiO2/Si substrates, and back-gated Bi2O2Se field effect transistors are fabricated, outperforming previously reported in-plane Bi2O2Se devices transferred with the assistance of corrosive acids and adhesive polymers. Furthermore, Bi2O2Se/graphene heterostructures are fulfilled by a probe tip to fabricate hybrid phototransistors with pristine interfaces, exhibiting highly efficient photoresponses. The results in this work demonstrate the potential of inclined Bi2O2Se to act as a building block for prospective van der Waals heterostructures.