ABSTRACT
Helium ion beam induced deposition (HIBID) is an attractive technique capable of precise fabrication of nanostructures. However, the damage caused by helium ion irradiation is the major drawback of conventional HIBID. In this study, area-selective atomic layer deposition (ALD) accompanied with the HIBID technique is explored to solve this problem. A platinum (Pt) seed layer was prepared by HIBID with a helium dose much lower than that of the conventional HIBID to reduce the damage due to the bombardment of energetic ions. Afterwards, Pt was selectively deposited on the seed layer to achieve area-selective ALD. Accordingly, the Pt nanolines with a feature size of ~15 nm are accomplished by the area-selective ALD and the HIBID technique under the condition of the damage-free does.
