FTIR Nanospectroscopy Shows Molecular Structures of Plant Biominerals and Cell Walls.

Plant tissues are complex composite structures of organic and inorganic components whose function relies on molecular heterogeneity at the nanometer scale. Scattering-type near-field optical microscopy (s-SNOM) in the mid-infrared (IR) region is used here to collect IR nanospectra from both fixed and native plant samples. We compared structures of chemically extracted silica bodies (phytoliths) to silicified and nonsilicified cell walls prepared as a flat block of epoxy-embedded awns of wheat (Triticum turgidum), thin sections of native epidermis cells from sorghum (Sorghum bicolor) comprising silica phytoliths, and isolated cells from awns of oats (Avena sterilis). The correlation of the scanning-probe IR images and the mechanical phase image enables a combined probing of mechanical material properties together with the chemical composition and structure of both the cell walls and the phytolith structures. The data reveal a structural heterogeneity of the different silica bodies in situ, as well as different compositions and crystallinities of cell wall components. In conclusion, IR nanospectroscopy is suggested as an ideal tool for studies of native plant materials of varied origins and preparations and could be applied to other inorganic-organic hybrid materials.

Hyperspectral time-domain terahertz nano-imaging.

Terahertz (THz) near-field microscopy has wide and unprecedented application potential for nanoscale materials and photonic-device characterization. Here, we introduce hyperspectral THz nano-imaging by combining scattering-type scanning near-field optical microscopy (s-SNOM) with THz time-domain spectroscopy (TDS). We describe the technical implementations that enabled this achievement and demonstrate its performance with a heterogeneously doped Si semiconductor sample. Specifically, we recorded a hyperspectral image of 40 by 20 pixels in 180 minutes and with a spatial resolution of about ~170 nm by measuring at each pixel with a time domain spectrum covering the range from 0.4 to 1.8 THz. Fitting the spectra with a Drude model allows for measuring-noninvasively and without the need for Ohmic contacts-the local mobile carrier concentration of the differently doped Si areas. We envision wide application potential for THz hyperspectral nano-imaging, including nanoscale carrier profiling of industrial semiconductor structures or characterizing complex and correlated electron matter, as well as low dimensional (1D or 2D) materials.

Acoustic terahertz graphene plasmons revealed by photocurrent nanoscopy.

Terahertz (THz) fields are widely used for sensing, communication and quality control. In future applications, they could be efficiently confined, enhanced and manipulated well below the classical diffraction limit through the excitation of graphene plasmons (GPs). These possibilities emerge from the strongly reduced GP wavelength, λp, compared with the photon wavelength, λ0, which can be controlled by modulating the carrier density of graphene via electrical gating. Recently, GPs in a graphene/insulator/metal configuration have been predicted to exhibit a linear dispersion (thus called acoustic plasmons) and a further reduced wavelength, implying an improved field confinement, analogous to plasmons in two-dimensional electron gases (2DEGs) near conductive substrates. Although infrared GPs have been visualized by scattering-type scanning near-field optical microscopy (s-SNOM), the real-space imaging of strongly confined THz plasmons in graphene and 2DEGs has been elusive so far-only GPs with nearly free-space wavelengths have been observed. Here we demonstrate real-space imaging of acoustic THz plasmons in a graphene photodetector with split-gate architecture. To that end, we introduce nanoscale-resolved THz photocurrent near-field microscopy, where near-field excited GPs are detected thermoelectrically rather than optically. This on-chip detection simplifies GP imaging as sophisticated s-SNOM detection schemes can be avoided. The photocurrent images reveal strongly reduced GP wavelengths (λp ≈ λ0/66), a linear dispersion resulting from the coupling of GPs with the metal gate below the graphene, and that plasmon damping at positive carrier densities is dominated by Coulomb impurity scattering.

Nanoscale infrared absorption spectroscopy of individual nanoparticles enabled by scattering-type near-field microscopy.

Infrared absorption spectroscopy is a powerful and widely used tool for analyzing the chemical composition and structure of materials. Because of the diffraction limit, however, it cannot be applied for studying individual nanostructures. Here we demonstrate that the phase contrast in substrate-enhanced scattering-type scanning near-field optical microscopy (s-SNOM) provides a map of the infrared absorption spectrum of individual nanoparticles with nanometer-scale spatial resolution. We succeeded in the chemical identification of silicon nitride nanoislands with heights well below 10 nm, by infrared near-field fingerprint spectroscopy of the Si-N stretching bond. Employing a novel theoretical model, we show that the near-field phase spectra of small particles correlate well with their far-field absorption spectra. On the other hand, the spectral near-field contrast does not scale with the volume of the particles. We find a nearly linear scaling law, which we can attribute to the near-field coupling between the near-field probe and the substrate. Our results provide fundamental insights into the spectral near-field contrast of nanoparticles and clearly demonstrate the capability of s-SNOM for nanoscale chemical mapping based on local infrared absorption.

Nanoscale residual stress-field mappingaround nanoindents in SiCby IR s-SNOM and confocal Raman microscopy.

We map a nanoindent in a silicon carbide (SiC) crystal by infrared (IR) scattering-type scanning near-field optical microscopy (s-SNOM) and confocal Raman microscopy and interpret the resulting images in terms of local residual stress-fields. By comparing near-field IR and confocal Raman images, we find that the stress-induced shifts of the longitudinal optical phonon-frequencies (LO) and the related shift of the phonon-polariton near-field resonance give rise to Raman and s-SNOM image contrasts, respectively. We apply single-frequency IR s-SNOM for nanoscale resolved imaging of local stress-fields and confocal Raman microscopy to obtain the complete spectral information about stress-induced shifts of the phonon frequencies at diffraction limited spatial resolution. The spatial extension of the local stress-field around the nanoindent agrees well between both techniques. Our results demonstrate that both methods ideally complement each other, allowing for the detailed analysis of stress-fields at e.g. material and grain boundaries, in Micro-Electro-Mechanical-Systems (MEMS), or in engineered nanostructures.