Subchronic oral toxicity evaluation of gold nanoparticles in male and female mice.

Gold nanoparticles (AuNPs) are biocompatible nanomaterials with potential application in the food industry. The safety of AuNPs oral consumption remains inconclusive, and information on possible long-term toxicity is limited. The current study aimed to evaluate the subchronic oral toxicity of AuNPs in male and female Institute of Cancer Research (ICR) mice. Citrate-coated spherical AuNPs with 53 nm diameters were prepared and orally administered to the mice. No mortality or clinical abnormalities were observed following daily administration of AuNPs at the dosages of 0.2, 2, and 20 mg/kg for 90 days. There was no significant difference in body weight or the relative organs' weights between the control and AuNPs-treated mice. No gross abnormalities or histopathological changes were observed except that the male mice treated with high dose (20 mg/kg AuNPs) showed minor infiltration in the kidneys, and female mice showed a reduced A/G ratio and elevated platelet indices. Overall, the 90-day long-term oral consumption of AuNPs did not cause significant toxicity in mice.

Forming-free bipolar resistive switching in nonstoichiometric ceria films.

The mechanism of forming-free bipolar resistive switching in a Zr/CeOx/Pt device was investigated. High-resolution transmission electron microscopy and energy-dispersive spectroscopy analysis indicated the formation of a ZrOy layer at the Zr/CeOx interface. X-ray diffraction studies of CeOx films revealed that they consist of nano-polycrystals embedded in a disordered lattice. The observed resistive switching was suggested to be linked with the formation and rupture of conductive filaments constituted by oxygen vacancies in the CeOx film and in the nonstoichiometric ZrOy interfacial layer. X-ray photoelectron spectroscopy study confirmed the presence of oxygen vacancies in both of the said regions. In the low-resistance ON state, the electrical conduction was found to be of ohmic nature, while the high-resistance OFF state was governed by trap-controlled space charge-limited mechanism. The stable resistive switching behavior and long retention times with an acceptable resistance ratio enable the device for its application in future nonvolatile resistive random access memory (RRAM).