Long-Term Aging Study on the Solid State Interfacial Reactions of In on Cu Substrate.

Indium is considered a candidate low-temperature solder because of its low melting temperature and excellent mechanical properties. However, the solid-state microstructure evolution of In with different substrates has rarely been studied due to the softness of In. To overcome this difficulty, cryogenic broad Ar+ beam ion polishing was used to produce an artifact-free Cu/In interface for observation. In this study, we accomplished phase identification and microstructure investigation at the Cu/In interface after long-term thermal aging. CuIn2 was observed to grow at the Cu/In interface and proved to be a stable phase in the Cu-In binary system. The peritectoid temperature of the Cu11In9 + In → CuIn2 reaction was confirmed to be between 100 and 120 °C. In addition, the growth rate of CuIn2 was discovered to be dominated by the curvature of the reactant Cu11In9/In phase and the temperature difference with the peritectoid temperature. Finally, a comprehensive microstructural evolution mechanism of the Cu/In solid-state interfacial reaction was proposed.

Artifact-Free Microstructures in the Interfacial Reaction between Eutectic In-48Sn and Cu Using Ion Milling.

Eutectic In-48Sn was considered a promising candidate for low-temperature solder due to its low melting point and excellent mechanical properties. Both Cu2(In,Sn) and Cu(In,Sn)2 formation were observed at the In-48Sn/Cu interface after 160 °C soldering. However, traditional mechanical polishing produces many defects at the In-48Sn/Cu interface, which may affect the accuracy of interfacial reaction investigations. In this study, cryogenic broad Ar+ beam ion milling was used to investigate the interfacial reaction between In-48Sn and Cu during soldering. The phase Cu6(Sn,In)5 was confirmed as the only intermetallic compound formed during 150 °C soldering, while Cu(In,Sn)2 formation was proven to be caused by room-temperature aging after soldering. Both the Cu6(Sn,In)5 and Cu(In,Sn)2 phases were confirmed by EPMA quantitative analysis and TEM selected area electron diffraction. The microstructure evolution and growth mechanism of Cu6(Sn,In)5 during soldering were proposed. In addition, the Young's modulus and hardness of Cu6(Sn,In)5 were determined to be 119.04 ± 3.94 GPa and 6.28 ± 0.13 GPa, respectively, suggesting that the doping of In in Cu6(Sn,In)5 has almost no effect on Young's modulus and hardness.