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ACS Appl Mater Interfaces ; 8(51): 35123-35131, 2016 Dec 28.
Article in English | MEDLINE | ID: mdl-27966865

ABSTRACT

A rapid route of synthesizing pristine Co4Sb12 at relatively low temperature was previously developed. However, filling the voids using the same procedure is not successful. We develop a new route to fabricate In-filled cobalt skutterudites with InSb nanoinclusions InxCo4Sb12-(InSb)y via solid-vapor reaction between hydrothermally synthesized Co4Sb12 powder and the indium chunk. The nanocomposites are characterized using powder X-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy, and inductively coupled plasma mass spectrometry (ICP-MS). With the success of partial filling of In into the voids and InSb nanoinclusions, the power factor of the InxCo4Sb12-(InSb)y nanocomposites is significantly enhanced, and the thermal conductivity is lowered as compared with the pristine Co4Sb12. As a result, ZT with its highest value of 1.0 is attained for the hierarchical structured In0.04Co4Sb12-(InSb)0.05 nanocomposite at 575 K. The attained ZT value is among the highest ever reported value at T ≤ 575 K for In-filled cobalt skutterudites.

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